페이지 96 - Vishay Siliconix 제품 | Heisener Electronics
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Vishay Siliconix 제품

기록 5,544
페이지  96/198
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2N5547JTXV01
Vishay Siliconix

JFET N-CH 50V TO-71

  • FET Type: -
  • Voltage - Breakdown (V(BR)GSS): -
  • Drain to Source Voltage (Vdss): -
  • Current - Drain (Idss) @ Vds (Vgs=0): -
  • Current Drain (Id) - Max: -
  • Voltage - Cutoff (VGS off) @ Id: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Resistance - RDS(On): -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-71-6
  • Supplier Device Package: TO-71
패키지: TO-71-6
재고2,464
IRF840AL
Vishay Siliconix

MOSFET N-CH 500V 8A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고3,920
IRF520S
Vishay Siliconix

MOSFET N-CH 100V 9.2A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,232
IRFP360LC
Vishay Siliconix

MOSFET N-CH 400V 23A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,544
hot IRF840S
Vishay Siliconix

MOSFET N-CH 500V 8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고692,688
hot IRFPF50
Vishay Siliconix

MOSFET N-CH 900V 6.7A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고9,420
hot SI4451DY-T1-GE3
Vishay Siliconix

MOSFET P-CH 12V 10A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.25 mOhm @ 14A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고14,448
SQR97N06-6M3L_GE3
Vishay Siliconix

MOSFET N-CH 60V 50A TO252

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고4,928
hot SI1467DH-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.7A SC-70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 561pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고36,000
SIRA24DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 60A SO8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 10V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
패키지: PowerPAK? SO-8
재고7,216
hot IRLR014PBF
Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고570,192
IRF9530STRLPBF
Vishay Siliconix

MOSFET P-CH 100V 12A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고17,412
SI7655ADN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 40A 1212-8S

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? 1212-8S (3.3x3.3)
  • Package / Case: 8-PowerVDFN
패키지: 8-PowerVDFN
재고7,568
IRFBF20LPBF
Vishay Siliconix

MOSFET N-CH 900V 1.7A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고15,666
hot SI1403BDL-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 1.4A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6 (SOT-363)
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고389,004
hot IRLD014PBF
Vishay Siliconix

MOSFET N-CH 60V 1.7A 4-DIP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
패키지: 4-DIP (0.300", 7.62mm)
재고24,000
hot SI4410BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 7.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고652,464
SI9145BY-E3
Vishay Siliconix

IC REG CTRLR BUCK/BOOST 16SOIC

  • Output Type: Transistor Driver
  • Function: Step-Up/Step-Down
  • Output Configuration: Positive
  • Topology: Buck, Boost
  • Number of Outputs: 1
  • Output Phases: 1
  • Voltage - Supply (Vcc/Vdd): 2.7 V ~ 7 V
  • Frequency - Switching: 2kHz ~ 2MHz
  • Duty Cycle (Max): 100%
  • Synchronous Rectifier: Yes
  • Clock Sync: No
  • Serial Interfaces: -
  • Control Features: Enable, Frequency Control, Soft Start
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고4,944
hot DG643DJ
Vishay Siliconix

IC VIDEO SWITCH SPDT 16DIP

  • Switch Circuit: SPDT
  • Multiplexer/Demultiplexer Circuit: 2:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 15 Ohm
  • Channel-to-Channel Matching (ΔRon): 1 Ohm
  • Voltage - Supply, Single (V+): 3 V ~ 15 V
  • Voltage - Supply, Dual (V±): ±3 V ~ 15 V
  • Switch Time (Ton, Toff) (Max): 70ns, 50ns
  • -3db Bandwidth: 500MHz
  • Charge Injection: 19pC
  • Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
  • Current - Leakage (IS(off)) (Max): 10nA
  • Crosstalk: -87dB @ 5MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
패키지: 16-DIP (0.300", 7.62mm)
재고17,796
DG444BDY-T1
Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 4
  • On-State Resistance (Max): 80 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 12V
  • Voltage - Supply, Dual (V±): ±15V
  • Switch Time (Ton, Toff) (Max): 300ns, 200ns
  • -3db Bandwidth: -
  • Charge Injection: 1pC
  • Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
  • Current - Leakage (IS(off)) (Max): 500pA
  • Crosstalk: -95dB @ 100kHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고6,176
DG9262DY-E3
Vishay Siliconix

IC SWITCH DUAL SPST 8SOIC

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 2
  • On-State Resistance (Max): 60 Ohm
  • Channel-to-Channel Matching (ΔRon): 400 mOhm
  • Voltage - Supply, Single (V+): 2.7 V ~ 12 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 75ns, 50ns
  • -3db Bandwidth: -
  • Charge Injection: 2pC
  • Channel Capacitance (CS(off), CD(off)): 7pF
  • Current - Leakage (IS(off)) (Max): 100pA
  • Crosstalk: -90dB @ 1MHz
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,872
SISA72ADN-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 25.4A/94A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 1212-8
  • Package / Case: PowerPAK® 1212-8
패키지: -
재고33,102
SI4511DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
SIS932EDN-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Power - Max: 2.6W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK® 1212-8 Dual
  • Supplier Device Package: PowerPAK® 1212-8 Dual
패키지: -
재고8,529
SQJ423EP-T1_BE3
Vishay Siliconix

P-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
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SQA411CEJW-T1_GE3
Vishay Siliconix

AUTOMOTIVE P-CHANNEL 60 V (D-S)

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 13.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerPAK®SC-70W-6
  • Package / Case: PowerPAK® SC-70-6
패키지: -
재고1,638
SIHF074N65E-GE3
Vishay Siliconix

E SERIES POWER MOSFET TO-220 FUL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2904 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 79mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Full Pack
  • Package / Case: TO-220-3 Full Pack
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SIHP15N80AEF-GE3
Vishay Siliconix

EF SERIES POWER MOSFET WITH FAST

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
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재고6,633