Diodes Incorporated 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DMN32D0LV-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	Request a Quote	-	30V	680mA (Ta)	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	0.62nC @ 4.5V	44.8pF @ 15V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN3732UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	1.1A (Ta)	460mOhm @ 200mA, 4.5V	0.95V @ 250µA	0.9nC @ 10V	40.8pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN52D0UDM-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 410mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V Power - Max: 490mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: -	Request a Quote	-	50V	410mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.6nC @ 10V	42.4pF @ 25V	490mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
DMN53D0LV-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.35A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Power - Max: 430mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고245,700	-	50V	350mA (Ta)	1.6Ohm @ 500mA, 10V	1.5V @ 250µA	0.6nC @ 4.5V	46pF @ 25V	430mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
2N7002DW-7-F-79	Diodes Incorporated	MOSFET 2N-CH 60V SOT-363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMTH45M5SPDW-13	Diodes Incorporated	MOSFET 2N-CH 40V 79A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V Power - Max: 3.3W (Ta), 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	패키지: -	재고6,570	-	40V	79A (Tc)	5.5mOhm @ 25A, 10V	3.5V @ 250µA	13.2nC @ 10V	1083pF @ 20V	3.3W (Ta), 60W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMC2025UFDB-13	Diodes Incorporated	MOSFET N/P-CH 20V 6A/3.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: -	Request a Quote	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMG1023UVQ-7	Diodes Incorporated	MOSFET 2P-CH 20V 1.03A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V Power - Max: 530mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고8,700	-	20V	1.03A (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.622nC @ 4.5V	59pF @ 16V	530mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN52D0UVA-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Power - Max: 480mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고30,000	-	50V	480mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	39pF @ 25V	480mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN32D0LVQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고6,615	-	30V	680mA (Ta)	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	0.62nC @ 4.5V	44.8pF @ 15V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN52D0UDW-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	50V	350mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.5nC @ 10V	42.3pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMP3165SVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V Power - Max: 1.08W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	2.7A (Ta)	95mOhm @ 2.7A, 10V	2.2V @ 250µA	6.8nC @ 10V	287pF @ 15V	1.08W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMP31D1UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC2025UFDBQ-7	Diodes Incorporated	MOSFET N/P-CH 20V 6A/3.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: -	재고8,835	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMN1003UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN3518-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Power - Max: 2.67W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN3518-6	패키지: -	재고9,000	-	-	-	-	1.3V @ 1mA	56.5nC @ 4.5V	3315pF @ 6V	2.67W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN3518-6
DMNH6035SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 33A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Power - Max: 2.4W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	패키지: -	Request a Quote	-	60V	33A (Tc)	35mOhm @ 15A, 10V	3V @ 250µA	16nC @ 10V	879pF @ 25V	2.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
2N7002DWAQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	60V	180mA (Ta)	6Ohm @ 115mA, 10V	2.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC2053UVTQ-13	Diodes Incorporated	MOSFET N/P-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	재고30,000	-	20V	4.6A (Ta), 3.2A (Ta)	35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V, 5.9nC @ 4.5V	369pF @ 10V, 440pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC3401LDW-13	Diodes Incorporated	MOSFET N/P-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	재고59,325	-	30V	800mA (Ta), 550mA (Ta)	400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V	1.6V @ 250µA, 2.6V @ 250µA	1.2nC @ 10V, 800pC @ 10V	50pF @ 15V, 19pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC2710UDWQ-13	Diodes Incorporated	MOSFET N/P-CH 20V 0.75A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	20V	750mA (Ta), 600mA (Ta)	450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V, 0.7nC @ 4.5V	42pF @ 16V, 49pF @ 16V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMG1029SVQ-7	Diodes Incorporated	MOSFET N/P-CH 60V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: -	재고9,000	-	60V	500mA (Ta), 360mA (Ta)	1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V	2.5V @ 250µA, 3V @ 250µA	0.3nC @ 4.5V, 0.28nC @ 4.5V	30pF @ 25V, 25pF @ 25V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP31D1UVT-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMHT3006LFJ-13	Diodes Incorporated	MOSFET 4N-CH 30V 13A 12VDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerVDFN Supplier Device Package: V-DFN5045-12 (Type C)	패키지: -	재고8,790	-	30V	13A (Ta)	10mOhm @ 10A, 10V	3V @ 250µA	17nC @ 10V	1171pF @ 15V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerVDFN	V-DFN5045-12 (Type C)
DMT10H032LDV-7	Diodes Incorporated	MOSFET 2N-CH 100V 18A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V Power - Max: 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	패키지: -	Request a Quote	-	100V	18A (Tc)	36mOhm @ 10A, 10V	2.5V @ 250µA	11.9nC @ 10V	683pF @ 50V	1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMN3135LVTQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 3.5A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 840mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	패키지: -	Request a Quote	-	30V	3.5A (Ta)	60mOhm @ 3.1A, 10V	2.2V @ 250µA	9nC @ 10V	305pF @ 15V	840mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN2036UCB4-7	Diodes Incorporated	MOSFET 2N-CH X2-WLB1616 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLBGA Supplier Device Package: X2-WLB1616-4	패키지: -	재고9,000	-	-	-	-	-	12.6nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLBGA	X2-WLB1616-4
DMP2900UDW-13	Diodes Incorporated	MOSFET 2P-CH 20V 0.63A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V Power - Max: 370mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: -	Request a Quote	-	20V	630mA (Ta)	750mOhm @ 430mA, 4.5V	1V @ 250µA	0.7nC @ 4.5V	49pF @ 16V	370mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN3022LFG-13	Diodes Incorporated	MOSFET 2N-CH 30V 7.6A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Power - Max: 1.96W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	패키지: -	Request a Quote	-	30V	7.6A (Ta), 15A (Tc)	22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V	2.1V @ 250µA, 1.2V @ 250µA	3.7nC @ 4.5V, 8nC @ 4.5V	481pF @ 15V, 996pF @ 15V	1.96W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)

DMN32D0LV-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

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-

30V

680mA (Ta)

1.2Ohm @ 100mA, 4V

1.2V @ 250µA

0.62nC @ 4.5V

44.8pF @ 15V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN3732UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

30V

1.1A (Ta)

460mOhm @ 200mA, 4.5V

0.95V @ 250µA

0.9nC @ 10V

40.8pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN52D0UDM-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 42.4pF @ 25V
Power - Max: 490mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: -

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-

50V

410mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.6nC @ 10V

42.4pF @ 25V

490mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

DMN53D0LV-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.35A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V
Power - Max: 430mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고245,700

-

50V

350mA (Ta)

1.6Ohm @ 500mA, 10V

1.5V @ 250µA

0.6nC @ 4.5V

46pF @ 25V

430mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

2N7002DW-7-F-79

Diodes Incorporated

MOSFET 2N-CH 60V SOT-363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

DMTH45M5SPDW-13

Diodes Incorporated

MOSFET 2N-CH 40V 79A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1083pF @ 20V
Power - Max: 3.3W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

패키지: -

재고6,570

-

40V

79A (Tc)

5.5mOhm @ 25A, 10V

3.5V @ 250µA

13.2nC @ 10V

1083pF @ 20V

3.3W (Ta), 60W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMC2025UFDB-13

Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: -

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-

20V

6A (Ta), 3.5A (Ta)

25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

1V @ 250µA, 1.4V @ 250µA

12.3nC @ 10V, 15nC @ 8V

486pF @ 10V, 642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMG1023UVQ-7

Diodes Incorporated

MOSFET 2P-CH 20V 1.03A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.622nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 16V
Power - Max: 530mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고8,700

-

20V

1.03A (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.622nC @ 4.5V

59pF @ 16V

530mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN52D0UVA-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V
Power - Max: 480mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고30,000

-

50V

480mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

39pF @ 25V

480mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN32D0LVQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고6,615

-

30V

680mA (Ta)

1.2Ohm @ 100mA, 4V

1.2V @ 250µA

0.62nC @ 4.5V

44.8pF @ 15V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN52D0UDW-7

Diodes Incorporated

MOSFET BVDSS: 31V~40V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 42.3pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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-

50V

350mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.5nC @ 10V

42.3pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMP3165SVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 287pF @ 15V
Power - Max: 1.08W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

30V

2.7A (Ta)

95mOhm @ 2.7A, 10V

2.2V @ 250µA

6.8nC @ 10V

287pF @ 15V

1.08W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMP31D1UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

30V

760mA (Ta)

1Ohm @ 400mA, 4.5V

1.1V @ 250µA

1.6nC @ 8V

54pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC2025UFDBQ-7

Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: -

재고8,835

-

20V

6A (Ta), 3.5A (Ta)

25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

1V @ 250µA, 1.4V @ 250µA

12.3nC @ 10V, 15nC @ 8V

486pF @ 10V, 642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMN1003UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN3518-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Power - Max: 2.67W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN3518-6

패키지: -

재고9,000

-

1.3V @ 1mA

56.5nC @ 4.5V

3315pF @ 6V

2.67W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN3518-6

DMNH6035SPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 33A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Power - Max: 2.4W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

패키지: -

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-

60V

33A (Tc)

35mOhm @ 15A, 10V

3V @ 250µA

16nC @ 10V

879pF @ 25V

2.4W (Ta), 68W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

2N7002DWAQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.18A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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60V

180mA (Ta)

6Ohm @ 115mA, 10V

2.5V @ 250µA

0.87nC @ 10V

22pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC2053UVTQ-13

Diodes Incorporated

MOSFET N/P-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

재고30,000

-

20V

4.6A (Ta), 3.2A (Ta)

35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V, 5.9nC @ 4.5V

369pF @ 10V, 440pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC3401LDW-13

Diodes Incorporated

MOSFET N/P-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, 800pC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, 19pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

재고59,325

-

30V

800mA (Ta), 550mA (Ta)

400mOhm @ 590mA, 10V, 900mOhm @ 420mA, 10V

1.6V @ 250µA, 2.6V @ 250µA

1.2nC @ 10V, 800pC @ 10V

50pF @ 15V, 19pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC2710UDWQ-13

Diodes Incorporated

MOSFET N/P-CH 20V 0.75A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, 49pF @ 16V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

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20V

750mA (Ta), 600mA (Ta)

450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V, 0.7nC @ 4.5V

42pF @ 16V, 49pF @ 16V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMG1029SVQ-7

Diodes Incorporated

MOSFET N/P-CH 60V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
Power - Max: 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: -

재고9,000

-

60V

500mA (Ta), 360mA (Ta)

1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V

2.5V @ 250µA, 3V @ 250µA

0.3nC @ 4.5V, 0.28nC @ 4.5V

30pF @ 25V, 25pF @ 25V

450mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP31D1UVT-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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30V

760mA (Ta)

1Ohm @ 400mA, 4.5V

1.1V @ 250µA

1.6nC @ 8V

54pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMHT3006LFJ-13

Diodes Incorporated

MOSFET 4N-CH 30V 13A 12VDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 15V
Power - Max: 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerVDFN
Supplier Device Package: V-DFN5045-12 (Type C)

패키지: -

재고8,790

-

30V

13A (Ta)

10mOhm @ 10A, 10V

3V @ 250µA

17nC @ 10V

1171pF @ 15V

1.3W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerVDFN

V-DFN5045-12 (Type C)

DMT10H032LDV-7

Diodes Incorporated

MOSFET 2N-CH 100V 18A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
Power - Max: 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

패키지: -

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100V

18A (Tc)

36mOhm @ 10A, 10V

2.5V @ 250µA

11.9nC @ 10V

683pF @ 50V

1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMN3135LVTQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 3.5A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 840mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

패키지: -

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-

30V

3.5A (Ta)

60mOhm @ 3.1A, 10V

2.2V @ 250µA

9nC @ 10V

305pF @ 15V

840mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN2036UCB4-7

Diodes Incorporated

MOSFET 2N-CH X2-WLB1616

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.45W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLBGA
Supplier Device Package: X2-WLB1616-4

패키지: -

재고9,000

-

12.6nC @ 4.5V

-

1.45W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, WLBGA

X2-WLB1616-4

DMP2900UDW-13

Diodes Incorporated

MOSFET 2P-CH 20V 0.63A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 49pF @ 16V
Power - Max: 370mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: -

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20V

630mA (Ta)

750mOhm @ 430mA, 4.5V

1V @ 250µA

0.7nC @ 4.5V

49pF @ 16V

370mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN3022LFG-13

Diodes Incorporated

MOSFET 2N-CH 30V 7.6A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V
Power - Max: 1.96W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

패키지: -

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30V

7.6A (Ta), 15A (Tc)

22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V

2.1V @ 250µA, 1.2V @ 250µA

3.7nC @ 4.5V, 8nC @ 4.5V

481pF @ 15V, 996pF @ 15V

1.96W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)