Diodes Incorporated 제품 - PMIC - 게이트 구동기

부품 번호	제조업체	설명	패키지	재고	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DGD05473FNQ-7	Diodes Incorporated	HV GATE DRIVER U-DFN3030-10 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.7V ~ 14V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: CMOS/TTL High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 16ns, 12ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-UFDFN Exposed Pad Supplier Device Package: U-DFN3030-10	패키지: 10-UFDFN Exposed Pad	재고2,368	Independent	2	N-Channel MOSFET	4.7V ~ 14V	0.8V, 2.4V	1.5A, 2.5A	CMOS/TTL	50V	16ns, 12ns	150°C (TJ)	Surface Mount	10-UFDFN Exposed Pad	U-DFN3030-10
DGD0590AFU-7	Diodes Incorporated	HV GATE DRIVER V-QFN3030-8 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 27ns, 29ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Supplier Device Package: V-QFN3030-8 (Type TH)	패키지: 8-VQFN Exposed Pad	재고5,424	Independent	2	N-Channel MOSFET	4.5V ~ 5.5V	-	1A, 3A	Non-Inverting	50V	27ns, 29ns	150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	V-QFN3030-8 (Type TH)
DGD0590FU-7	Diodes Incorporated	IC GATE DRV HALFBRD QFN3030-8 3K Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V Logic Voltage - VIL, VIH: 1V, 3.3V Current - Peak Output (Source, Sink): 1A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 27ns, 29ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Supplier Device Package: V-QFN3030-8	패키지: 8-VQFN Exposed Pad	재고7,408	Independent	2	N-Channel MOSFET	4.5V ~ 5.5V	1V, 3.3V	1A, 3A	Non-Inverting	50V	27ns, 29ns	-40°C ~ 150°C (TJ)	Surface Mount	8-VQFN Exposed Pad	V-QFN3030-8
DGD05463M10-13	Diodes Incorporated	IC GATE DRV HALFBRDG 10MSOP 2.5K Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 14V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 17ns, 12ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-MSOP	패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	재고5,408	Synchronous	2	N-Channel MOSFET	4.5V ~ 14V	0.8V, 2.4V	1.5A, 2.5A	Non-Inverting	50V	17ns, 12ns	-40°C ~ 150°C (TJ)	Surface Mount	10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	10-MSOP
DGD36030S28-13	Diodes Incorporated	HV GATE DRIVER SO-28 Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,504	-	-	-	-	-	-	-	-	-	-	-	-	-
DGD0636MS28-13	Diodes Incorporated	HV GATE DRIVER SO-28 Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 100V Rise / Fall Time (Typ): 90ns, 35ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SO	패키지: 28-SOIC (0.295", 7.50mm Width)	재고4,960	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.4V	200mA, 350mA	Inverting	100V	90ns, 35ns	150°C (TJ)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SO
DGD2012S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDG 8SO 2.5K Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,488	Independent	2	N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	1.9A, 2.3A	Non-Inverting	200V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2005S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDG 8SO 2.5K Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.6V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200V Rise / Fall Time (Typ): 100ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,728	Independent	2	N-Channel MOSFET	10V ~ 20V	0.6V, 2.5V	290mA, 600mA	Non-Inverting	200V	100ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD0215WT-7	Diodes Incorporated	IC GATE DRIVER SOT25 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.9A, 1.8A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-25	패키지: SOT-23-5 Thin, TSOT-23-5	재고3,008	Single	1	IGBT, N-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.9A, 1.8A	Inverting	-	15ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-25
DGD0216WT-7	Diodes Incorporated	IC GATE DRIVER SOT25 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.9A, 1.8A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-25	패키지: SOT-23-5 Thin, TSOT-23-5	재고5,872	Single	1	IGBT, N-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.9A, 1.8A	Non-Inverting	-	15ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-25
DGD2003S8-13	Diodes Incorporated	IC GATE HV DRVR SO-8 Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 200V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Type TH	패키지: 8-SOIC (0.154", 3.90mm Width)	재고23,640	Synchronous	2	N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	200V	70ns, 35ns	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO Type TH
DGD23892S28-13	Diodes Incorporated	IC GATE DRVR HALF-BRDG 28SO 1.5K Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10V ~ 15V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 350mA, 650mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 25ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SO	패키지: 28-SOIC (0.295", 7.50mm Width)	재고2,144	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 15V	0.8V, 2.4V	350mA, 650mA	Inverting	600V	40ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SO
DGD0636S28-13	Diodes Incorporated	IC GATE DRVR HALF-BRDG 28SO 1.5K Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 100V Rise / Fall Time (Typ): 90ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SO	패키지: 28-SOIC (0.295", 7.50mm Width)	재고4,272	3-Phase	6	N-Channel MOSFET	10V ~ 20V	0.8V, 2.4V	200mA, 350mA	Inverting	100V	90ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SO
DGD2136MS28-13	Diodes Incorporated	HV GATE DRIVER SO-28 Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 90ns, 35ns Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SO	패키지: 28-SOIC (0.295", 7.50mm Width)	재고7,616	3-Phase	6	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.4V	200mA, 350mA	Inverting	600V	90ns, 35ns	150°C (TJ)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SO
DGD2164MS14-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 14SOIC Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
DGD0211CWTQ-7	Diodes Incorporated	HV Gate Driver TSOT25 T&R 3K Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.9A, 1.8A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-25	패키지: -	재고7,728	Single	1	N-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.9A, 1.8A	Inverting, Non-Inverting	-	15ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-25
DGD0280WTQ-7	Diodes Incorporated	HV GATE DRIVER TSOT25 T&R 3K Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2.5A, 2.8A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-25	패키지: -	Request a Quote	Single	1	IGBT, N-Channel MOSFET	4.5V ~ 18V	0.8V, 2V	2.5A, 2.8A	Non-Inverting	-	20ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-25
DGD2388MS20-13	Diodes Incorporated	HV Gate Driver SO-20 T&R 1.5K Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 420mA, 750mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Rise / Fall Time (Typ): 45ns, 25ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SO Type TH	패키지: -	재고13,440	3-Phase	6	N-Channel MOSFET	10V ~ 20V	0.8V, 2.4V	420mA, 750mA	Non-Inverting	600 V	45ns, 25ns	-40°C ~ 125°C (TA)	Surface Mount	20-SOIC (0.295", 7.50mm Width)	20-SO Type TH
DGD0579UFNQ-7	Diodes Incorporated	HV GATE DRIVER W-DFN3030-10 T&R Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 7V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 19ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFDFN Exposed Pad Supplier Device Package: U-DFN3030-10	패키지: -	Request a Quote	Independent	2	N-Channel MOSFET	7V ~ 18V	0.8V, 2.5V	1.5A, 2.5A	Non-Inverting	100 V	19ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	10-UFDFN Exposed Pad	U-DFN3030-10
DGD0597FUQ-7	Diodes Incorporated	HV GATE DRIVER V-QFN3030-8 T&R 3 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Rise / Fall Time (Typ): 7ns, 5ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Supplier Device Package: V-QFN3030-8	패키지: -	재고9,000	Independent	2	N-Channel MOSFET	4.5V ~ 5.5V	0.8V, 2.5V	1.5A, 2.5A	Non-Inverting	40 V	7ns, 5ns	-40°C ~ 125°C (TA)	Surface Mount	8-VQFN Exposed Pad	V-QFN3030-8
DGD05791UFN-7	Diodes Incorporated	HV GATE DRIVER U-DFN3030-10 T&R Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 6.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 19ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFDFN Exposed Pad Supplier Device Package: U-DFN3030-10	패키지: -	Request a Quote	Independent	2	N-Channel MOSFET	6.5V ~ 18V	0.8V, 2.5V	1.5A, 2.5A	Non-Inverting	100 V	19ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	10-UFDFN Exposed Pad	U-DFN3030-10
DGD0636M28-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 28SOIC Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
DGD0211CWT-7	Diodes Incorporated	HV GATE DRIVER TSOT25 T&R 3K Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.9A, 1.8A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-25	패키지: -	재고23,382	Single	1	IGBT, N-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.9A, 1.8A	Inverting, Non-Inverting	-	15ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-25
DGD0280WT-7	Diodes Incorporated	HV GATE DRIVER SOT25 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2.5A, 2.8A Input Type: CMOS, TTL High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: TSOT-23-5	패키지: -	재고15,090	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2V	2.5A, 2.8A	CMOS, TTL	-	20ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	TSOT-23-5
ZXGD3004E6QTA	Diodes Incorporated	TRANSISTOR GATE DRIVER SOT26 T&R Driven Configuration: High-Side or Low-Side Channel Type: Independent Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 40V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 8A, 8A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 14ns, 14ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: -	Request a Quote	Independent	1	IGBT, N-Channel MOSFET	40V	-	8A, 8A	Non-Inverting	-	14ns, 14ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
DGD0597FU-7	Diodes Incorporated	HV GATE DRIVER V-QFN3030-8 T&R 3 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 40 V Rise / Fall Time (Typ): 7ns, 5ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Supplier Device Package: V-QFN3030-8	패키지: -	재고8,865	Independent	2	N-Channel MOSFET	4.5V ~ 5.5V	0.8V, 2.5V	1.5A, 2.5A	Non-Inverting	40 V	7ns, 5ns	-40°C ~ 125°C (TA)	Surface Mount	8-VQFN Exposed Pad	V-QFN3030-8
DGD0579UFN-7	Diodes Incorporated	HV GATE DRIVER,W-DFN3030-10,T&R, Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 6.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 6.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 19ns, 15ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: W-DFN3030-10	패키지: -	재고19,878	Independent	2	N-Channel MOSFET	6.5V ~ 18V	0.8V, 6.5V	1.5A, 2.5A	Non-Inverting	100 V	19ns, 15ns	-40°C ~ 125°C (TA)	Surface Mount	10-WFDFN Exposed Pad	W-DFN3030-10
DGD1003FTA-13	Diodes Incorporated	HV GATE DRIVER V-DFN3035-8(TYPE Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 150 V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Supplier Device Package: V-DFN3035-8	패키지: -	재고15,000	Independent	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	150 V	70ns, 35ns	-40°C ~ 125°C (TA)	Surface Mount	8-VDFN	V-DFN3035-8

DGD05473FNQ-7

Diodes Incorporated

HV GATE DRIVER U-DFN3030-10

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.7V ~ 14V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: CMOS/TTL
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 16ns, 12ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Supplier Device Package: U-DFN3030-10

패키지: 10-UFDFN Exposed Pad

재고2,368

Independent

2

N-Channel MOSFET

4.7V ~ 14V

0.8V, 2.4V

1.5A, 2.5A

CMOS/TTL

50V

16ns, 12ns

150°C (TJ)

Surface Mount

10-UFDFN Exposed Pad

U-DFN3030-10

DGD0590AFU-7

Diodes Incorporated

HV GATE DRIVER V-QFN3030-8

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 27ns, 29ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: V-QFN3030-8 (Type TH)

패키지: 8-VQFN Exposed Pad

재고5,424

Independent

2

N-Channel MOSFET

4.5V ~ 5.5V

-

1A, 3A

Non-Inverting

50V

27ns, 29ns

150°C (TJ)

Surface Mount

8-VQFN Exposed Pad

V-QFN3030-8 (Type TH)

DGD0590FU-7

Diodes Incorporated

IC GATE DRV HALFBRD QFN3030-8 3K

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 1V, 3.3V
Current - Peak Output (Source, Sink): 1A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 27ns, 29ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: V-QFN3030-8

패키지: 8-VQFN Exposed Pad

재고7,408

Independent

2

N-Channel MOSFET

4.5V ~ 5.5V

1V, 3.3V

1A, 3A

Non-Inverting

50V

27ns, 29ns

-40°C ~ 150°C (TJ)

Surface Mount

8-VQFN Exposed Pad

V-QFN3030-8

DGD05463M10-13

Diodes Incorporated

IC GATE DRV HALFBRDG 10MSOP 2.5K

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 14V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 17ns, 12ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP

패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

재고5,408

Synchronous

2

N-Channel MOSFET

4.5V ~ 14V

0.8V, 2.4V

1.5A, 2.5A

Non-Inverting

50V

17ns, 12ns

-40°C ~ 150°C (TJ)

Surface Mount

10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

10-MSOP

DGD36030S28-13

Diodes Incorporated

HV GATE DRIVER SO-28

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,504

-

DGD0636MS28-13

Diodes Incorporated

HV GATE DRIVER SO-28

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100V
Rise / Fall Time (Typ): 90ns, 35ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SO

패키지: 28-SOIC (0.295", 7.50mm Width)

재고4,960

3-Phase

6

IGBT, N-Channel MOSFET

10V ~ 20V

0.8V, 2.4V

200mA, 350mA

Inverting

100V

90ns, 35ns

150°C (TJ)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SO

DGD2012S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDG 8SO 2.5K

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,488

Independent

2

N-Channel MOSFET

10V ~ 20V

0.8V, 2.5V

1.9A, 2.3A

Non-Inverting

200V

40ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2005S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDG 8SO 2.5K

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200V
Rise / Fall Time (Typ): 100ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,728

Independent

2

N-Channel MOSFET

10V ~ 20V

0.6V, 2.5V

290mA, 600mA

Non-Inverting

200V

100ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD0215WT-7

Diodes Incorporated

IC GATE DRIVER SOT25

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-25

패키지: SOT-23-5 Thin, TSOT-23-5

재고3,008

Single

1

IGBT, N-Channel MOSFET

4.5V ~ 18V

0.8V, 2.4V

1.9A, 1.8A

Inverting

-

15ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-25

DGD0216WT-7

Diodes Incorporated

IC GATE DRIVER SOT25

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-25

패키지: SOT-23-5 Thin, TSOT-23-5

재고5,872

Single

1

IGBT, N-Channel MOSFET

4.5V ~ 18V

0.8V, 2.4V

1.9A, 1.8A

Non-Inverting

-

15ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-25

DGD2003S8-13

Diodes Incorporated

IC GATE HV DRVR SO-8

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO Type TH

패키지: 8-SOIC (0.154", 3.90mm Width)

재고23,640

Synchronous

2

N-Channel MOSFET

10V ~ 20V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

200V

70ns, 35ns

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO Type TH

DGD23892S28-13

Diodes Incorporated

IC GATE DRVR HALF-BRDG 28SO 1.5K

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 15V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 350mA, 650mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 25ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SO

패키지: 28-SOIC (0.295", 7.50mm Width)

재고2,144

3-Phase

6

IGBT, N-Channel MOSFET

10V ~ 15V

0.8V, 2.4V

350mA, 650mA

Inverting

600V

40ns, 25ns

-40°C ~ 150°C (TJ)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SO

DGD0636S28-13

Diodes Incorporated

IC GATE DRVR HALF-BRDG 28SO 1.5K

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 100V
Rise / Fall Time (Typ): 90ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SO

패키지: 28-SOIC (0.295", 7.50mm Width)

재고4,272

3-Phase

6

N-Channel MOSFET

10V ~ 20V

0.8V, 2.4V

200mA, 350mA

Inverting

100V

90ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SO

DGD2136MS28-13

Diodes Incorporated

HV GATE DRIVER SO-28

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 90ns, 35ns
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SO

패키지: 28-SOIC (0.295", 7.50mm Width)

재고7,616

3-Phase

6

IGBT, N-Channel MOSFET

10V ~ 20V

0.8V, 2.4V

200mA, 350mA

Inverting

600V

90ns, 35ns

150°C (TJ)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SO

DGD2164MS14-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 14SOIC

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DGD0211CWTQ-7

Diodes Incorporated

HV Gate Driver TSOT25 T&R 3K

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-25

패키지: -

재고7,728

Single

1

N-Channel MOSFET

4.5V ~ 18V

0.8V, 2.4V

1.9A, 1.8A

Inverting, Non-Inverting

-

15ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-25

DGD0280WTQ-7

Diodes Incorporated

HV GATE DRIVER TSOT25 T&R 3K

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-25

패키지: -

Request a Quote

Single

1

IGBT, N-Channel MOSFET

4.5V ~ 18V

0.8V, 2V

2.5A, 2.8A

Non-Inverting

-

20ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-25

DGD2388MS20-13

Diodes Incorporated

HV Gate Driver SO-20 T&R 1.5K

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 420mA, 750mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Rise / Fall Time (Typ): 45ns, 25ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SO Type TH

패키지: -

재고13,440

3-Phase

6

N-Channel MOSFET

10V ~ 20V

0.8V, 2.4V

420mA, 750mA

Non-Inverting

600 V

45ns, 25ns

-40°C ~ 125°C (TA)

Surface Mount

20-SOIC (0.295", 7.50mm Width)

20-SO Type TH

DGD0579UFNQ-7

Diodes Incorporated

HV GATE DRIVER W-DFN3030-10 T&R

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 7V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Rise / Fall Time (Typ): 19ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Supplier Device Package: U-DFN3030-10

패키지: -

Request a Quote

Independent

2

N-Channel MOSFET

7V ~ 18V

0.8V, 2.5V

1.5A, 2.5A

Non-Inverting

100 V

19ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

10-UFDFN Exposed Pad

U-DFN3030-10

DGD0597FUQ-7

Diodes Incorporated

HV GATE DRIVER V-QFN3030-8 T&R 3

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Rise / Fall Time (Typ): 7ns, 5ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: V-QFN3030-8

패키지: -

재고9,000

Independent

2

N-Channel MOSFET

4.5V ~ 5.5V

0.8V, 2.5V

1.5A, 2.5A

Non-Inverting

40 V

7ns, 5ns

-40°C ~ 125°C (TA)

Surface Mount

8-VQFN Exposed Pad

V-QFN3030-8

DGD05791UFN-7

Diodes Incorporated

HV GATE DRIVER U-DFN3030-10 T&R

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 6.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Rise / Fall Time (Typ): 19ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Supplier Device Package: U-DFN3030-10

패키지: -

Request a Quote

Independent

2

N-Channel MOSFET

6.5V ~ 18V

0.8V, 2.5V

1.5A, 2.5A

Non-Inverting

100 V

19ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

10-UFDFN Exposed Pad

U-DFN3030-10

DGD0636M28-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 28SOIC

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

DGD0211CWT-7

Diodes Incorporated

HV GATE DRIVER TSOT25 T&R 3K

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.9A, 1.8A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-25

패키지: -

재고23,382

Single

1

IGBT, N-Channel MOSFET

4.5V ~ 18V

0.8V, 2.4V

1.9A, 1.8A

Inverting, Non-Inverting

-

15ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-25

DGD0280WT-7

Diodes Incorporated

HV GATE DRIVER SOT25

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2.5A, 2.8A
Input Type: CMOS, TTL
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: TSOT-23-5

패키지: -

재고15,090

Single

1

IGBT, N-Channel, P-Channel MOSFET

4.5V ~ 18V

0.8V, 2V

2.5A, 2.8A

CMOS, TTL

-

20ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

TSOT-23-5

ZXGD3004E6QTA

Diodes Incorporated

TRANSISTOR GATE DRIVER SOT26 T&R

Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 40V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 8A, 8A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 14ns, 14ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: -

Request a Quote

Independent

1

IGBT, N-Channel MOSFET

40V

-

8A, 8A

Non-Inverting

-

14ns, 14ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

DGD0597FU-7

Diodes Incorporated

HV GATE DRIVER V-QFN3030-8 T&R 3

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 40 V
Rise / Fall Time (Typ): 7ns, 5ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: V-QFN3030-8

패키지: -

재고8,865

Independent

2

N-Channel MOSFET

4.5V ~ 5.5V

0.8V, 2.5V

1.5A, 2.5A

Non-Inverting

40 V

7ns, 5ns

-40°C ~ 125°C (TA)

Surface Mount

8-VQFN Exposed Pad

V-QFN3030-8

DGD0579UFN-7

Diodes Incorporated

HV GATE DRIVER,W-DFN3030-10,T&R,

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 6.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 6.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Rise / Fall Time (Typ): 19ns, 15ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: W-DFN3030-10

패키지: -

재고19,878

Independent

2

N-Channel MOSFET

6.5V ~ 18V

0.8V, 6.5V

1.5A, 2.5A

Non-Inverting

100 V

19ns, 15ns

-40°C ~ 125°C (TA)

Surface Mount

10-WFDFN Exposed Pad

W-DFN3030-10

DGD1003FTA-13

Diodes Incorporated

HV GATE DRIVER V-DFN3035-8(TYPE

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN
Supplier Device Package: V-DFN3035-8

패키지: -

재고15,000

Independent

2

IGBT, N-Channel MOSFET

10V ~ 20V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

150 V

70ns, 35ns

-40°C ~ 125°C (TA)

Surface Mount

8-VDFN

V-DFN3035-8