페이지 119 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
LDA620002	Diodes Incorporated	OSCILLATOR XO 106.25MHZ LVDS SMD Type: XO (Standard) Frequency: 106.25MHz Function: Enable/Disable Output: LVDS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 47mA Ratings: - Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Height - Seated (Max): 0.051" (1.30mm)	패키지: 6-SMD, No Lead	재고5,346
FN0670003	Diodes Incorporated	OSCILLATOR XO 6.758MHZ CMOS SMD Type: XO (Standard) Frequency: 6.758MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±25ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 15mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	패키지: 4-SMD, No Lead	재고7,650
DMN2027LK3-13	Diodes Incorporated	MOSFET N-CH 20V 11.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.14W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,640
DMN31D6UT-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V SOT523 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13.6pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 320mW Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	패키지: SOT-523	재고3,232
DMT6010LSS-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 T&R 2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,888
DMN2013UFX-7	Diodes Incorporated	MOSFET 2N-CH 20V 10A 6-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V Power - Max: 780mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: W-DFN5020-6	패키지: 6-VFDFN Exposed Pad	재고3,472
ZTX968STOA	Diodes Incorporated	TRANS PNP 12V 4.5A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 4.5A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V Power - Max: 1.58W Frequency - Transition: 80MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고2,208
ZXTN19020DZTA	Diodes Incorporated	TRANS NPN 20V 7.5A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 7.5A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Power - Max: 2.4W Frequency - Transition: 160MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고689,052
ZXT690BKTC	Diodes Incorporated	TRANS NPN 45V 3A D-PAK Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Power - Max: 3.9W Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고15,960
DDTA115GUA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고4,768
DDTC115ECA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): 100k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고660,000
ZMV834ATC	Diodes Incorporated	DIODE VARACTOR 25V SOD323 Capacitance @ Vr, F: 51.7pF @ 2V, 1MHz Capacitance Ratio: 6.5 Capacitance Ratio Condition: C2/C20 Voltage - Peak Reverse (Max): 25V Diode Type: Single Q @ Vr, F: 200 @ 3V, 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: SC-76, SOD-323	재고4,496
SBRT10U50SP5-13D	Diodes Incorporated	DIODE SBR 50V 10A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 450mV @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고3,040
BAV756DW-7	Diodes Incorporated	DIODE ARRAY GP 75V 150MA SOT363 Diode Configuration: 2 Pair CA + CC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io) (per Diode): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고2,432
BAV99TA	Diodes Incorporated	DIODE ARRAY GP 75V 300MA SOT23-3 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io) (per Diode): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,000
PT8A2511WEX	Diodes Incorporated	HOME APPL TIMER SO-8 Type: - Applications: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,568
ZHT431G02TC	Diodes Incorporated	IC VREF SHUNT ADJ SOT223 Reference Type: Shunt Output Type: Adjustable Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): 20V Current - Output: 100mA Tolerance: ±2% Temperature Coefficient: 67ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 50µA Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고6,160
ZR431C	Diodes Incorporated	IC VREF SHUNT ADJ TO92-3 Reference Type: Shunt Output Type: Adjustable Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): 20V Current - Output: 100mA Tolerance: ±2% Temperature Coefficient: 55ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 50µA Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고5,472
DGD2104AS8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 210mA, 360mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,904
AP9101CK6-CPTRG1	Diodes Incorporated	MULTICELL BATT MANAGER SOT26 Function: - Battery Chemistry: - Number of Cells: - Fault Protection: - Interface: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,712
74AUP1G08FX4-7	Diodes Incorporated	IC GATE AND 1CH 2-INP 6-X2DFN Logic Type: AND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 0.8 V ~ 3.6 V Current - Quiescent (Max): 0.5µA Current - Output High, Low: 4mA, 4mA Logic Level - Low: 0.7 V ~ 0.9 V Logic Level - High: 1.6 V ~ 2 V Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: X2-DFN1409-6 Package / Case: 6-XFDFN	패키지: 6-XFDFN	재고42,378
PI6C490098LE	Diodes Incorporated	IC CLK BUFFER 1:3 25MHZ 16TSSOP Type: Fanout Buffer (Distribution) Number of Circuits: 1 Ratio - Input:Output: 1:3 Differential - Input:Output: No/No Input: LVCMOS, Crystal Output: LVCMOS Frequency - Max: 25MHz Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	패키지: 16-TSSOP (0.173", 4.40mm Width)	재고4,480
SMBJ17A-13	Diodes Incorporated	TVS DIODE 17VWM 27.6VC SMB Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 17V Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Current - Peak Pulse (10/1000µs): 21.7A Power - Peak Pulse: 600W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB	패키지: DO-214AA, SMB	재고2,736
SMBJ33A-13-F	Diodes Incorporated	TVS DIODE 33VWM 53.3VC SMB Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 33V Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Current - Peak Pulse (10/1000µs): 11.3A Power - Peak Pulse: 600W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB	패키지: DO-214AA, SMB	재고26,472
AP1501A-T5RG-U	Diodes Incorporated	IC REG BUCK 3A TO220-5 Function: - Output Configuration: - Topology: - Output Type: - Number of Outputs: - Voltage - Input (Min): - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Frequency - Switching: - Synchronous Rectifier: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-220-5 Formed Leads Supplier Device Package: TO-220-5R	패키지: TO-220-5 Formed Leads	재고3,056
BZT52C12SQ-7-F	Diodes Incorporated	ZENER DIODE SOD323 T&R 3K Voltage - Zener (Nom) (Vz): 12 V Tolerance: ±5.41% Power - Max: 200 mW Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: -	재고8,124
DMTH10H009LFGQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
ADTC144ECAQ-13	Diodes Incorporated	TRANS PREBIAS NPN 50V SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 310 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: -	Request a Quote

LDA620002

Diodes Incorporated

OSCILLATOR XO 106.25MHZ LVDS SMD

Type: XO (Standard)
Frequency: 106.25MHz
Function: Enable/Disable
Output: LVDS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 47mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Height - Seated (Max): 0.051" (1.30mm)

패키지: 6-SMD, No Lead

재고5,346

FN0670003

Diodes Incorporated

OSCILLATOR XO 6.758MHZ CMOS SMD

Type: XO (Standard)
Frequency: 6.758MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 15mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

재고7,650

DMN2027LK3-13

Diodes Incorporated

MOSFET N-CH 20V 11.6A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2.14W (Ta)
Rds On (Max) @ Id, Vgs: 21 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,640

DMN31D6UT-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V SOT523

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 13.6pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 320mW
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523

패키지: SOT-523

재고3,232

DMT6010LSS-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,888

DMN2013UFX-7

Diodes Incorporated

MOSFET 2N-CH 20V 10A 6-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: W-DFN5020-6

패키지: 6-VFDFN Exposed Pad

재고3,472

ZTX968STOA

Diodes Incorporated

TRANS PNP 12V 4.5A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
Power - Max: 1.58W
Frequency - Transition: 80MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고2,208

ZXTN19020DZTA

Diodes Incorporated

TRANS NPN 20V 7.5A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 7.5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 2.4W
Frequency - Transition: 160MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고689,052

ZXT690BKTC

Diodes Incorporated

TRANS NPN 45V 3A D-PAK

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Power - Max: 3.9W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고15,960

DDTA115GUA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고4,768

DDTC115ECA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고660,000

ZMV834ATC

Diodes Incorporated

DIODE VARACTOR 25V SOD323

Capacitance @ Vr, F: 51.7pF @ 2V, 1MHz
Capacitance Ratio: 6.5
Capacitance Ratio Condition: C2/C20
Voltage - Peak Reverse (Max): 25V
Diode Type: Single
Q @ Vr, F: 200 @ 3V, 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

재고4,496

SBRT10U50SP5-13D

Diodes Incorporated

DIODE SBR 50V 10A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고3,040

BAV756DW-7

Diodes Incorporated

DIODE ARRAY GP 75V 150MA SOT363

Diode Configuration: 2 Pair CA + CC
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io) (per Diode): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고2,432

BAV99TA

Diodes Incorporated

DIODE ARRAY GP 75V 300MA SOT23-3

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,000

PT8A2511WEX

Diodes Incorporated

HOME APPL TIMER SO-8

Type: -
Applications: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,568

ZHT431G02TC

Diodes Incorporated

IC VREF SHUNT ADJ SOT223

Reference Type: Shunt
Output Type: Adjustable
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Current - Output: 100mA
Tolerance: ±2%
Temperature Coefficient: 67ppm/°C
Noise - 0.1Hz to 10Hz: -
Noise - 10Hz to 10kHz: -
Voltage - Input: -
Current - Supply: -
Current - Cathode: 50µA
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고6,160

ZR431C

Diodes Incorporated

IC VREF SHUNT ADJ TO92-3

Reference Type: Shunt
Output Type: Adjustable
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): 20V
Current - Output: 100mA
Tolerance: ±2%
Temperature Coefficient: 55ppm/°C
Noise - 0.1Hz to 10Hz: -
Noise - 10Hz to 10kHz: -
Voltage - Input: -
Current - Supply: -
Current - Cathode: 50µA
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고5,472

DGD2104AS8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 210mA, 360mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,904

AP9101CK6-CPTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT26

Function: -
Battery Chemistry: -
Number of Cells: -
Fault Protection: -
Interface: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,712

74AUP1G08FX4-7

Diodes Incorporated

IC GATE AND 1CH 2-INP 6-X2DFN

Logic Type: AND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 0.8 V ~ 3.6 V
Current - Quiescent (Max): 0.5µA
Current - Output High, Low: 4mA, 4mA
Logic Level - Low: 0.7 V ~ 0.9 V
Logic Level - High: 1.6 V ~ 2 V
Max Propagation Delay @ V, Max CL: 6.2ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN1409-6
Package / Case: 6-XFDFN

패키지: 6-XFDFN

재고42,378

PI6C490098LE

Diodes Incorporated

IC CLK BUFFER 1:3 25MHZ 16TSSOP

Type: Fanout Buffer (Distribution)
Number of Circuits: 1
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Input: LVCMOS, Crystal
Output: LVCMOS
Frequency - Max: 25MHz
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

재고4,480

SMBJ17A-13

Diodes Incorporated

TVS DIODE 17VWM 27.6VC SMB

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 17V
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Current - Peak Pulse (10/1000µs): 21.7A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB

패키지: DO-214AA, SMB

재고2,736

SMBJ33A-13-F

Diodes Incorporated

TVS DIODE 33VWM 53.3VC SMB

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 33V
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Current - Peak Pulse (10/1000µs): 11.3A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB

패키지: DO-214AA, SMB

재고26,472

AP1501A-T5RG-U

Diodes Incorporated

IC REG BUCK 3A TO220-5

Function: -
Output Configuration: -
Topology: -
Output Type: -
Number of Outputs: -
Voltage - Input (Min): -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: -
Frequency - Switching: -
Synchronous Rectifier: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-220-5 Formed Leads
Supplier Device Package: TO-220-5R

패키지: TO-220-5 Formed Leads

재고3,056

BZT52C12SQ-7-F

Diodes Incorporated

ZENER DIODE SOD323 T&R 3K

Voltage - Zener (Nom) (Vz): 12 V
Tolerance: ±5.41%
Power - Max: 200 mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: -

재고8,124

DMTH10H009LFGQ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2361 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

패키지: -

Request a Quote

ADTC144ECAQ-13

Diodes Incorporated

TRANS PREBIAS NPN 50V SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 310 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: -

Request a Quote