페이지 172 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
DMT10H015LCG-13	Diodes Incorporated	MOSFET NCH 100V 9.4A 8VDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 Package / Case: 8-VDFN Exposed Pad	패키지: 8-VDFN Exposed Pad	재고6,704
DMN2250UFB-7B	Diodes Incorporated	MOSFET N-CH 20V 1.35A 3DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	패키지: 3-UFDFN	재고4,544
ZXMP10A17E6QTA	Diodes Incorporated	MOSFET P-CH 100V 1.3A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	패키지: SOT-23-6	재고78,000
DMN4031SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 5.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Power - Max: 1.42W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,440
APT13005DT-G1	Diodes Incorporated	TRANS NPN 450V 4A Transistor Type: NPN Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 450V Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Power - Max: 75W Frequency - Transition: 4MHz Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: TO-220-3	재고7,360
FMMT458QTA	Diodes Incorporated	TRANS NPN 400V 0.225A SOT23 Transistor Type: NPN Current - Collector (Ic) (Max): 225mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 500mW Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,760
ZXTP717MATA	Diodes Incorporated	TRANS PNP 12V 4A 3-DFN Transistor Type: PNP Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V Power - Max: 3W Frequency - Transition: 110MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Supplier Device Package: DFN2020B-3	패키지: 3-UDFN	재고129,756
MMBT6427-7-F	Diodes Incorporated	TRANS NPN DARL 40V 0.5A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Power - Max: 300mW Frequency - Transition: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고151,032
DDTB123EC-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,336
DFLZ22-7	Diodes Incorporated	DIODE ZENER 22V 1W POWERDI123 Voltage - Zener (Nom) (Vz): 22V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 16V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123	패키지: POWERDI?123	재고68,880
BZT52C15-7-F	Diodes Incorporated	DIODE ZENER 15V 500MW SOD123 Voltage - Zener (Nom) (Vz): 15V Tolerance: ±6% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100nA @ 10.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고172,716
MMBZ5227B-7-F	Diodes Incorporated	DIODE ZENER 3.6V 350MW SOT23-3 Voltage - Zener (Nom) (Vz): 3.6V Tolerance: ±5% Power - Max: 350mW Impedance (Max) (Zzt): 24 Ohms Current - Reverse Leakage @ Vr: 15µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고575,880
SBR5E60P5-7D	Diodes Incorporated	DIODE SBR 60V 5A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 220µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	패키지: PowerDI? 5	재고7,632
B160BQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AA, SMB	재고7,360
B340BQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 40V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고4,752
MMBD5004A-7	Diodes Incorporated	DIODE ARRAY GP 350V 300MA SOT23 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350V Current - Average Rectified (Io) (per Diode): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.275V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 360V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고23,034
MB352	Diodes Incorporated	RECTIFIER BRIDGE 200V 35A MB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 17.5A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, MB Supplier Device Package: MB	패키지: 4-Square, MB	재고5,344
GBJ1004-F	Diodes Incorporated	RECT BRIDGE GPP 400V 10A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고7,632
AP7363-15E-13	Diodes Incorporated	IC REG LINEAR 1.5A SOT223 Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 1.5A Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,248
AP2125N-4.2TRG1	Diodes Incorporated	IC REG LINEAR 4.2V 300MA SOT23-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 4.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.3V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 90µA PSRR: 65dB (100Hz ~ 1kHz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,048
AP7341D-22FS4-7	Diodes Incorporated	IC REG LINEAR 2.2V 300MA 4DFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.25V Voltage - Output (Min/Fixed): 2.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.36V @ 150mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 50µA PSRR: 75dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: X2-DFN1010-4	패키지: 4-XDFN Exposed Pad	재고2,960
PI74FCT541TQE	Diodes Incorporated	IC BUFF/DVR 8BIT N-INV 20QSOP Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 15mA, 64mA Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SSOP (0.154", 3.90mm Width) Supplier Device Package: 20-QSOP	패키지: 20-SSOP (0.154", 3.90mm Width)	재고6,032
TLV271IW5-7	Diodes Incorporated	IC OPAMP GP 3MHZ RRO SOT25 Amplifier Type: CMOS Number of Circuits: 1 Output Type: Rail-to-Rail Slew Rate: 2 V/µs Gain Bandwidth Product: 1.9MHz -3db Bandwidth: - Current - Input Bias: 1pA Voltage - Input Offset: 500µV Current - Supply: 550µA Current - Output / Channel: 8mA Voltage - Supply, Single/Dual (±): 2.7 V ~ 16 V, ±1.35 V ~ 8 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: SC-74A, SOT-753	재고3,136
PAM3101HCA400	Diodes Incorporated	IC REG LINEAR 4V 300MA SOT89-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 4V Voltage - Output (Max): - Voltage Dropout (Max): 0.23V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 90µA Current - Supply (Max): 90µA PSRR: 70dB ~ 65dB (100Hz ~ 1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고2,000
AP7361EA-25E-13	Diodes Incorporated	LDO CMOS HICURR SOT223 T&R 2.5K Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.6V @ 1A Current - Output: 1A Current - Quiescent (Iq): 91 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223-3	패키지: -	재고7,497
S1GB-13-G	Diodes Incorporated	DIODE GENERAL PURPOSE SMB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote
PI3CH400ZBEX-13R	Diodes Incorporated	BUS SWITCH 3V V-QFN3535-14 T&R 5 Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 4 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-VFQFN Exposed Pad Supplier Device Package: 14-TQFN (3.5x3.5)	패키지: -	Request a Quote
DMTH43M7LFG-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	패키지: -	Request a Quote

DMT10H015LCG-13

Diodes Incorporated

MOSFET NCH 100V 9.4A 8VDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: V-DFN3333-8
Package / Case: 8-VDFN Exposed Pad

패키지: 8-VDFN Exposed Pad

재고6,704

DMN2250UFB-7B

Diodes Incorporated

MOSFET N-CH 20V 1.35A 3DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 16V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-DFN1006 (1.0x0.6)
Package / Case: 3-UFDFN

패키지: 3-UFDFN

재고4,544

ZXMP10A17E6QTA

Diodes Incorporated

MOSFET P-CH 100V 1.3A SOT23-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-26
Package / Case: SOT-23-6

패키지: SOT-23-6

재고78,000

DMN4031SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 5.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
Power - Max: 1.42W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,440

APT13005DT-G1

Diodes Incorporated

TRANS NPN 450V 4A

Transistor Type: NPN
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 1A, 4A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Power - Max: 75W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

패키지: TO-220-3

재고7,360

FMMT458QTA

Diodes Incorporated

TRANS NPN 400V 0.225A SOT23

Transistor Type: NPN
Current - Collector (Ic) (Max): 225mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Power - Max: 500mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,760

ZXTP717MATA

Diodes Incorporated

TRANS PNP 12V 4A 3-DFN

Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 150mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2.5A, 2V
Power - Max: 3W
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Supplier Device Package: DFN2020B-3

패키지: 3-UDFN

재고129,756

MMBT6427-7-F

Diodes Incorporated

TRANS NPN DARL 40V 0.5A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Power - Max: 300mW
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고151,032

DDTB123EC-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,336

DFLZ22-7

Diodes Incorporated

DIODE ZENER 22V 1W POWERDI123

Voltage - Zener (Nom) (Vz): 22V
Tolerance: ±6%
Power - Max: 1W
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 16V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123

패키지: POWERDI?123

재고68,880

BZT52C15-7-F

Diodes Incorporated

DIODE ZENER 15V 500MW SOD123

Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±6%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 10.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고172,716

MMBZ5227B-7-F

Diodes Incorporated

DIODE ZENER 3.6V 350MW SOT23-3

Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 350mW
Impedance (Max) (Zzt): 24 Ohms
Current - Reverse Leakage @ Vr: 15µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고575,880

SBR5E60P5-7D

Diodes Incorporated

DIODE SBR 60V 5A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 220µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

재고7,632

B160BQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

재고7,360

B340BQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고4,752

MMBD5004A-7

Diodes Incorporated

DIODE ARRAY GP 350V 300MA SOT23

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350V
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.275V @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 360V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

재고23,034

MB352

Diodes Incorporated

RECTIFIER BRIDGE 200V 35A MB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 17.5A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, MB
Supplier Device Package: MB

패키지: 4-Square, MB

재고5,344

GBJ1004-F

Diodes Incorporated

RECT BRIDGE GPP 400V 10A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고7,632

AP7363-15E-13

Diodes Incorporated

IC REG LINEAR 1.5A SOT223

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 1.5A
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,248

AP2125N-4.2TRG1

Diodes Incorporated

IC REG LINEAR 4.2V 300MA SOT23-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 4.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.3V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 90µA
PSRR: 65dB (100Hz ~ 1kHz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,048

AP7341D-22FS4-7

Diodes Incorporated

IC REG LINEAR 2.2V 300MA 4DFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.25V
Voltage - Output (Min/Fixed): 2.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.36V @ 150mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 50µA
PSRR: 75dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: X2-DFN1010-4

패키지: 4-XDFN Exposed Pad

재고2,960

PI74FCT541TQE

Diodes Incorporated

IC BUFF/DVR 8BIT N-INV 20QSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 15mA, 64mA
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 20-QSOP

패키지: 20-SSOP (0.154", 3.90mm Width)

재고6,032

TLV271IW5-7

Diodes Incorporated

IC OPAMP GP 3MHZ RRO SOT25

Amplifier Type: CMOS
Number of Circuits: 1
Output Type: Rail-to-Rail
Slew Rate: 2 V/µs
Gain Bandwidth Product: 1.9MHz
-3db Bandwidth: -
Current - Input Bias: 1pA
Voltage - Input Offset: 500µV
Current - Supply: 550µA
Current - Output / Channel: 8mA
Voltage - Supply, Single/Dual (±): 2.7 V ~ 16 V, ±1.35 V ~ 8 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

재고3,136

PAM3101HCA400

Diodes Incorporated

IC REG LINEAR 4V 300MA SOT89-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 4V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.23V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 90µA
Current - Supply (Max): 90µA
PSRR: 70dB ~ 65dB (100Hz ~ 1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고2,000

AP7361EA-25E-13

Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.6V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): 91 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3

패키지: -

재고7,497

S1GB-13-G

Diodes Incorporated

DIODE GENERAL PURPOSE SMB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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PI3CH400ZBEX-13R

Diodes Incorporated

BUS SWITCH 3V V-QFN3535-14 T&R 5

Type: Bus Switch
Circuit: 1 x 1:1
Independent Circuits: 4
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-VFQFN Exposed Pad
Supplier Device Package: 14-TQFN (3.5x3.5)

패키지: -

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DMTH43M7LFG-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

패키지: -

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