페이지 205 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FN5200008	Diodes Incorporated	OSCILLATOR XO 52.000MHZ CMOS SMD Type: XO (Standard) Frequency: 52MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 40mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	패키지: 4-SMD, No Lead	재고5,076
DMP2005UFG-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	패키지: 8-PowerVDFN	재고4,720
ZXMN2F34FHTA	Diodes Incorporated	MOSFET N-CH 20V 3.4A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 277pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고1,658,748
DMN3051L-7	Diodes Incorporated	MOSFET N-CH 30V 5.8A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고22,572
DMN2008LFU-13	Diodes Incorporated	MOSFET 2NCH 20V 14.5A UDFN2030 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	패키지: 6-UFDFN Exposed Pad	재고3,536
ZTX605STOB	Diodes Incorporated	TRANS NPN DARL 120V 1A E-LINE Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고3,552
ZTX958STZ	Diodes Incorporated	TRANS PNP 400V 0.5A E-LINE Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 500mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V Power - Max: 1.2W Frequency - Transition: 85MHz Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	패키지: E-Line-3, Formed Leads	재고72,000
ZXTN25100DFHTA	Diodes Incorporated	TRANS NPN 100V 2.5A SOT23-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Power - Max: 1.25W Frequency - Transition: 175MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고266,760
DSL12AW-7	Diodes Incorporated	TRANS PNP 12V 2A SOT363 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 12V Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V Power - Max: 450mW Frequency - Transition: 180MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고36,000
DDTC124TKA-7-F	Diodes Incorporated	TRANS PREBIAS NPN 200MW SC59-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고33,600
DDTB114GC-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,896
MMBZ5240BW-7-F	Diodes Incorporated	DIODE ZENER 10V 200MW SOT323 Voltage - Zener (Nom) (Vz): 10V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 17 Ohms Current - Reverse Leakage @ Vr: 3µA @ 8V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고72,000
MMBZ5234BTS-7-F	Diodes Incorporated	DIODE ZENER ARRAY 6.2V SOT363 Configuration: 3 Independent Voltage - Zener (Nom) (Vz): 6.2V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 5µA @ 4V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고6,816
BAS40-7-F-31	Diodes Incorporated	DIODE SCHOTTKY 40V 200MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 125°C	패키지: TO-236-3, SC-59, SOT-23-3	재고6,384
APD360VPL-G1	Diodes Incorporated	DIODE SCHOTTKY 60V 3A DO27 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 680mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-27 Operating Temperature - Junction: -50°C ~ 125°C	패키지: DO-201AA, DO-27, Axial	재고7,360
SDM03U40-7	Diodes Incorporated	DIODE SCHOTTKY 30V 30MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 30V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -40°C ~ 125°C	패키지: SC-79, SOD-523	재고18,748,512
SD103ATW-7	Diodes Incorporated	DIODE ARRAY SCHOTTKY 40V SOT363 Diode Configuration: 3 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 175mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 30V Operating Temperature - Junction: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	패키지: 6-TSSOP, SC-88, SOT-363	재고249,252
MB154W	Diodes Incorporated	RECTIFIER BRIDGE 15A 400V MB-35 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A Current - Reverse Leakage @ Vr: 10µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, MB-W Supplier Device Package: MB-W	패키지: 4-Square, MB-W	재고7,968
AP1702BWG-7	Diodes Incorporated	IC MPU RESET CIRC 4.38V SC59-3 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Push-Pull, Totem Pole Reset: Active High Reset Timeout: 100 ms Minimum Voltage - Threshold: 4.38V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고56,070
PT8A3237WEX	Diodes Incorporated	HEATER CONTROLLER SO-8 Applications: - Current - Supply: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,064
AP2192SG-13	Diodes Incorporated	IC PWR SW USB 2CH 1.5A 8-SOIC Switch Type: USB Switch Number of Outputs: 2 Ratio - Input:Output: 1:2 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 2.7 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Rds On (Typ): 120 mOhm Input Type: Non-Inverting Features: Status Flag Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,576
AP2192ASG-13	Diodes Incorporated	IC PWR SWITCH 2CH USB 1.5A 8SOIC Switch Type: USB Switch Number of Outputs: 2 Ratio - Input:Output: 1:2 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 2.7 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.5A Rds On (Typ): 90 mOhm Input Type: Non-Inverting Features: Load Discharge, Status Flag Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고45,546
AP9211S-AK-HAC-7	Diodes Incorporated	IC BATT PROT LI-ION U-DFN2030 Function: Battery Protection Battery Chemistry: Lithium-Ion Number of Cells: 1 Fault Protection: Over Current, Over Voltage Interface: 4-Wire Serial Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type C)	패키지: 6-UDFN Exposed Pad	재고5,184
74AHCT594T16-13	Diodes Incorporated	AHC HIGH PIN COUNT 16TSSOP Logic Type: Shift Register Output Type: Push-Pull Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel, Serial Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	패키지: 16-TSSOP (0.173", 4.40mm Width)	재고7,312
SMAJ100CA-13	Diodes Incorporated	TVS DIODE 100VWM 162VC SMA Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 100V Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Current - Peak Pulse (10/1000µs): 2.5A Power - Peak Pulse: 400W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA	패키지: DO-214AC, SMA	재고4,284
AP9101CAK-CDTRG1	Diodes Incorporated	MULTICELL BATT MANAGER SOT25 Function: Battery Protection Battery Chemistry: Lithium Ion/Polymer Number of Cells: 1 Fault Protection: Over Current, Over Voltage Interface: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: SC-74A, SOT-753	재고5,168
AP1117EL-13-ZT	Diodes Incorporated	IC REG LINEAR Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,560
DMN22M5UFG-7	Diodes Incorporated	MOSFET N-CH 20V 27A POWERDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	패키지: -	재고11,076

FN5200008

Diodes Incorporated

OSCILLATOR XO 52.000MHZ CMOS SMD

Type: XO (Standard)
Frequency: 52MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 40mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

재고5,076

DMP2005UFG-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI3333

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerVDFN

패키지: 8-PowerVDFN

재고4,720

ZXMN2F34FHTA

Diodes Incorporated

MOSFET N-CH 20V 3.4A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 277pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 950mW (Ta)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고1,658,748

DMN3051L-7

Diodes Incorporated

MOSFET N-CH 30V 5.8A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고22,572

DMN2008LFU-13

Diodes Incorporated

MOSFET 2NCH 20V 14.5A UDFN2030

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

패키지: 6-UFDFN Exposed Pad

재고3,536

ZTX605STOB

Diodes Incorporated

TRANS NPN DARL 120V 1A E-LINE

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고3,552

ZTX958STZ

Diodes Incorporated

TRANS PNP 400V 0.5A E-LINE

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 10V
Power - Max: 1.2W
Frequency - Transition: 85MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

패키지: E-Line-3, Formed Leads

재고72,000

ZXTN25100DFHTA

Diodes Incorporated

TRANS NPN 100V 2.5A SOT23-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 330mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Power - Max: 1.25W
Frequency - Transition: 175MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고266,760

DSL12AW-7

Diodes Incorporated

TRANS PNP 12V 2A SOT363

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 290mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 800mA, 1.5 V
Power - Max: 450mW
Frequency - Transition: 180MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고36,000

DDTC124TKA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SC59-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고33,600

DDTB114GC-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,896

MMBZ5240BW-7-F

Diodes Incorporated

DIODE ZENER 10V 200MW SOT323

Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고72,000

MMBZ5234BTS-7-F

Diodes Incorporated

DIODE ZENER ARRAY 6.2V SOT363

Configuration: 3 Independent
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 4V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고6,816

BAS40-7-F-31

Diodes Incorporated

DIODE SCHOTTKY 40V 200MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 125°C

패키지: TO-236-3, SC-59, SOT-23-3

재고6,384

APD360VPL-G1

Diodes Incorporated

DIODE SCHOTTKY 60V 3A DO27

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-27
Operating Temperature - Junction: -50°C ~ 125°C

패키지: DO-201AA, DO-27, Axial

재고7,360

SDM03U40-7

Diodes Incorporated

DIODE SCHOTTKY 30V 30MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 30V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -40°C ~ 125°C

패키지: SC-79, SOD-523

재고18,748,512

SD103ATW-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT363

Diode Configuration: 3 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 175mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 30V
Operating Temperature - Junction: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

재고249,252

MB154W

Diodes Incorporated

RECTIFIER BRIDGE 15A 400V MB-35

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
Current - Reverse Leakage @ Vr: 10µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, MB-W
Supplier Device Package: MB-W

패키지: 4-Square, MB-W

재고7,968

AP1702BWG-7

Diodes Incorporated

IC MPU RESET CIRC 4.38V SC59-3

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Push-Pull, Totem Pole
Reset: Active High
Reset Timeout: 100 ms Minimum
Voltage - Threshold: 4.38V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고56,070

PT8A3237WEX

Diodes Incorporated

HEATER CONTROLLER SO-8

Applications: -
Current - Supply: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,064

AP2192SG-13

Diodes Incorporated

IC PWR SW USB 2CH 1.5A 8-SOIC

Switch Type: USB Switch
Number of Outputs: 2
Ratio - Input:Output: 1:2
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 2.7 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Rds On (Typ): 120 mOhm
Input Type: Non-Inverting
Features: Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,576

AP2192ASG-13

Diodes Incorporated

IC PWR SWITCH 2CH USB 1.5A 8SOIC

Switch Type: USB Switch
Number of Outputs: 2
Ratio - Input:Output: 1:2
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 2.7 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Rds On (Typ): 90 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Status Flag
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고45,546

AP9211S-AK-HAC-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2030

Function: Battery Protection
Battery Chemistry: Lithium-Ion
Number of Cells: 1
Fault Protection: Over Current, Over Voltage
Interface: 4-Wire Serial
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type C)

패키지: 6-UDFN Exposed Pad

재고5,184

74AHCT594T16-13

Diodes Incorporated

AHC HIGH PIN COUNT 16TSSOP

Logic Type: Shift Register
Output Type: Push-Pull
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel, Serial
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

패키지: 16-TSSOP (0.173", 4.40mm Width)

재고7,312

SMAJ100CA-13

Diodes Incorporated

TVS DIODE 100VWM 162VC SMA

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 100V
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Current - Peak Pulse (10/1000µs): 2.5A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA

패키지: DO-214AC, SMA

재고4,284

AP9101CAK-CDTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

Function: Battery Protection
Battery Chemistry: Lithium Ion/Polymer
Number of Cells: 1
Fault Protection: Over Current, Over Voltage
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

재고5,168

AP1117EL-13-ZT

Diodes Incorporated

IC REG LINEAR

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,560

DMN22M5UFG-7

Diodes Incorporated

MOSFET N-CH 20V 27A POWERDI3333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

패키지: -

재고11,076