Diodes Incorporated 제품

WT3253F0026.000000

Diodes Incorporated

OSC TCXO 26.000MHZ CLP SNWV SMD

• Type: TCXO
• Frequency: 26MHz
• Function: -
• Output: Clipped Sine Wave
• Voltage - Supply: 1.8V
• Frequency Stability: ±500ppb
• Operating Temperature: -30°C ~ 85°C
• Current - Supply (Max): 1.5mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.047" (1.20mm)

패키지: 4-SMD, No Lead

SNI750006

Diodes Incorporated

OSCILLATOR XO 187.5MHZ PECL6-SMD

• Type: XO (Standard)
• Frequency: 187.5MHz
• Function: Enable/Disable
• Output: PECL
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 70mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.079" (2.00mm)

패키지: 6-SMD, No Lead

FN7500046

Diodes Incorporated

OSCILLATOR XO 75.000MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 75MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 1.8V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 20mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

FD7420006

Diodes Incorporated

OSCILLATOR XO 74.25MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 74.25MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 25mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
• Height - Seated (Max): 0.051" (1.30mm)

패키지: 4-SMD, No Lead

ZXM61P03FTC

Diodes Incorporated

MOSFET P-CH 30V 1.1A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 625mW (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 600mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

DDZ10DSF-7

Diodes Incorporated

DIODE ZENER 10.19V 500MW SOD323F

• Voltage - Zener (Nom) (Vz): 10.19V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 7.5µA @ 9.44V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

패키지: SC-90, SOD-323F

S1DB-13

Diodes Incorporated

DIODE GEN PURP 200V 1A SMB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AA, SMB

SBR1A30T5-7

Diodes Incorporated

SBR DIODE SOD523

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15ns
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: 95pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: SC-79, SOD-523

B240AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 40V
• Capacitance @ Vr, F: 93pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

MMBD4148TW-7

Diodes Incorporated

DIODE ARRAY GP 75V 150MA SOT363

• Diode Configuration: 3 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 75V
• Current - Average Rectified (Io) (per Diode): 150mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

BAT54ADW-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V SOT363

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

GBPC3502W

Diodes Incorporated

RECT BRIDGE GPP 200V 35A GBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

AP1117T33L-U

Diodes Incorporated

IC REG LINEAR 3.3V 1A TO220-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 18V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 60dB (180Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

AP1086DL-13

Diodes Incorporated

IC REG LIN POS ADJ 1.5A TO252-3

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 12V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 5V
• Voltage Dropout (Max): 1.4V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 60dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

ZTL432BFFTA

Diodes Incorporated

IC VREF SHUNT ADJ SOT-23F

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±0.5%
• Temperature Coefficient: -
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 600µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3 Flat Leads
• Supplier Device Package: SOT-23F

패키지: SOT-23-3 Flat Leads

PT74HC595WE

Diodes Incorporated

IC LOGIC

• Logic Type: -
• Number of Elements: -
• Number of Bits per Element: -
• Input Type: -
• Output Type: -
• Current - Output High, Low: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI6C22409-1HWIE

Diodes Incorporated

IC ZERO DELY CLK BUFF 1:9 16SOIC

• Type: -
• PLL: Yes with Bypass
• Input: TTL
• Output: TTL
• Number of Circuits: 1
• Ratio - Input:Output: 1:9
• Differential - Input:Output: No/No
• Frequency - Max: 220MHz
• Divider/Multiplier: No/No
• Voltage - Supply: 2.375 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

DT1240E-04LP-7

Diodes Incorporated

DATALINE PROTECTION PP U-DFN2510

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3.3V (Max)
• Voltage - Breakdown (Min): 5V
• Voltage - Clamping (Max) @ Ipp: 9.5V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 47W
• Power Line Protection: Yes
• Applications: -
• Capacitance @ Frequency: 0.55pF @ 1MHz
• Operating Temperature: -55°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN
• Supplier Device Package: U-DFN2510-10

패키지: 10-UFDFN

SMCJ11CA-13-F

Diodes Incorporated

TVS DIODE 11VWM 18.2VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 82.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: SMC

패키지: DO-214AB, SMC

AH1883-FJG-7

Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR 3-UDFN

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±5.5mT Trip, ±0.6mT Release
• Test Condition: 25°C
• Voltage - Supply: 1.65 V ~ 3.3 V
• Current - Supply (Max): 12µA
• Current - Output (Max): -
• Output Type: Push-Pull
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 3-UFDFN Exposed Pad
• Supplier Device Package: U-DFN-2020-3

패키지: 3-UFDFN Exposed Pad

PI7C9X1170ACLE

Diodes Incorporated

SPI BRIDGE TSSOP-24 TUBE 62PCS

• Protocol: I²C
• Function: Bridge, I²C/SPI to UART
• Interface: UART
• Standards: -
• Voltage - Supply: 1.62 V ~ 3.63 V
• Current - Supply: 6mA
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 24-TSSOP

패키지: 24-TSSOP (0.173", 4.40mm Width)

AS358PT-G1

Diodes Incorporated

IC OPERATIONAL AMP 8DIP

• Amplifier Type: -
• Number of Circuits: -
• Output Type: -
• Slew Rate: -
• Gain Bandwidth Product: -
• -3db Bandwidth: -
• Current - Input Bias: -
• Voltage - Input Offset: -
• Current - Supply: -
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BAV170T-7-G

Diodes Incorporated

DIODE GEN PURPOSE

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote

BAT54SW-7-F-2477

Diodes Incorporated

DIODE ARR SCHOT 30V 200MA SOT323

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 25 V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: -

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DMN1004UFDF-7

Diodes Incorporated

MOSFET N-CH 12V 15A 6UDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta)
• Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6
• Package / Case: 6-UDFN Exposed Pad

패키지: -

AP3845CP-G1

Diodes Incorporated

IC OFFLINE SWITCH 8DIP

• Output Isolation: Non-Isolated
• Internal Switch(s): No
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: 8.4 V
• Voltage - Supply (Vcc/Vdd): 7.6V
• Duty Cycle: 48%
• Frequency - Switching: 52kHz
• Power (Watts): 1 W
• Fault Protection: Current Limiting, Over Load, Over Temperature
• Control Features: Frequency Control
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP
• Mounting Type: Through Hole

패키지: -

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SDM40E20LAQ-7

Diodes Incorporated

DIODE ARR SCHOTT 20V 400MA SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io) (per Diode): 400mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 310 mV @ 100 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 20 V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: -

DMN3009LFV-7

Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerVDFN

패키지: -