Diodes Incorporated 제품

FK0610001

Diodes Incorporated

OSCILLATOR XO 6.14MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 6.14MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 3.3V
• Frequency Stability: ±25ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 10mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

패키지: 4-SMD, No Lead

DMTH3002LPS-13

Diodes Incorporated

MOSFET NCH 30V 100A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1.2W (Ta), 136W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

MMBT3904T-13

Diodes Incorporated

TRANS NPN 40V 200MA SOT523

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

패키지: SOT-523

ZXTP2009ZTA

Diodes Incorporated

TRANS PNP 40V 5.5A SOT89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 5.5A
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 185mV @ 550mA, 5.5A
• Current - Collector Cutoff (Max): 20nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
• Power - Max: 2.1W
• Frequency - Transition: 152MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

DDTA115EE-7-F

Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

패키지: SOT-523

SBL6050PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 50V TO3P

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 50V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3P

패키지: TO-3P-3, SC-65-3

SBL2035CT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 35V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 35V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

SP6260CEK-L/TR

Diodes Incorporated

IC REG LINEAR SOT23-5

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

패키지: SC-74A, SOT-753

AP431YL-13

Diodes Incorporated

IC VREF SHUNT ADJ SOT89-3

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.495V
• Voltage - Output (Max): 36V
• Current - Output: 200mA
• Tolerance: ±1%
• Temperature Coefficient: 30ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 500µA
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

AZ431LBRTR-E1

Diodes Incorporated

IC VREF SHUNT ADJ

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 18V
• Current - Output: 100mA
• Tolerance: ±1%
• Temperature Coefficient: 20ppm/°C Typical
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 80µA
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89

패키지: TO-243AA

AP432SRG-7

Diodes Incorporated

IC VREF SHUNT ADJ SOT23R

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 1.24V
• Voltage - Output (Max): 20V
• Current - Output: 200mA
• Tolerance: ±1%
• Temperature Coefficient: 30ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 300µA
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT23R

패키지: TO-236-3, SC-59, SOT-23-3

PT7M6431CHTA5EX

Diodes Incorporated

IC SUPERVSOR 3.1V SOT23-5

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High
• Reset Timeout: 120 ms Minimum
• Voltage - Threshold: 3.1V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

패키지: SC-74A, SOT-753

NIS5135MN2-FN-7

Diodes Incorporated

IC LOAD SWITCH 10UDFN

• Function: Electronic Fuse
• Sensing Method: High-Side
• Accuracy: -
• Voltage - Input: 3.1 V ~ 18 V
• Current - Output: 3.6A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 10-UFDFN Exposed Pad
• Supplier Device Package: U-DFN3030-10

패키지: 10-UFDFN Exposed Pad

PI5C34X245BEX-2017

Diodes Incorporated

BUS SWITCH 5V WIDE QSOP-80

• Type: -
• Circuit: -
• Independent Circuits: -
• Current - Output High, Low: -
• Voltage Supply Source: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI4MSD5V9540BUEX

Diodes Incorporated

IC BUS MULTIPLEXER 2CH 8MSOP

• Type: Multiplexer
• Circuit: 2 x 1:2
• Independent Circuits: 1
• Current - Output High, Low: -
• Voltage Supply Source: Single Supply
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI7C9X2G608GPBNJE

Diodes Incorporated

IC PCIE PACKET SWITCH 196LBGA

• Applications: Packet Switch, 6-Port/8-Lane
• Interface: PCI Express
• Voltage - Supply: -
• Package / Case: 196-LBGA
• Supplier Device Package: 196-LBGA (15x15)
• Mounting Type: Surface Mount

패키지: 196-LBGA

PI5A4158ZAEX-2017

Diodes Incorporated

IC SWITCH DUAL SPDT 12TDFN

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 1.2 Ohm
• Channel-to-Channel Matching (ΔRon): 10 mOhm
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 18ns, 20ns
• -3db Bandwidth: 150MHz
• Charge Injection: 35pC
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 20nA
• Crosstalk: -70dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

패키지: -

P6SMAJ9.0ADF

Diodes Incorporated

TRANSIENTVOLTAGESUPPRESSORD-FLAT

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 39A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, Flat Lead
• Supplier Device Package: D-Flat

패키지: 2-SMD, Flat Lead

AZ1086T-3.3E1

Diodes Incorporated

IC REG LINEAR 3.3V 1.5A TO220-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.5V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): 10mA
• Current - Supply (Max): -
• PSRR: 75dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: TO-220-3

DMP2040USS-13

Diodes Incorporated

MOSFET P-CH 20V 7A/15A 8SO T&R 2

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

DMT6006SPS-13

Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 98A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.45W (Ta), 89.3W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

패키지: -

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AP7353D-30FS4-7

Diodes Incorporated

LDO CMOS LOWCURR X2-DFN1010-4 (T

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.15V @ 250mA
• Current - Output: 250mA
• Current - Quiescent (Iq): 27 µA
• Current - Supply (Max): -
• PSRR: 90dB ~ 70dB (100Hz ~ 10kHz)
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: X2-DFN1010-4 (Type B)

패키지: -

T8M35T800UB

Diodes Incorporated

THYRISTOR TO220AB TUBE 50PCS

• Triac Type: Standard
• Voltage - Off State: 800 V
• Current - On State (It (RMS)) (Max): 8 A
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 55A, 60A
• Current - Gate Trigger (Igt) (Max): 35 mA
• Current - Hold (Ih) (Max): 50 mA
• Configuration: Single
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO220AB (Type WX)

패키지: -

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ADTC114ECAQ-7

Diodes Incorporated

TRANS PREBIAS NPN 50V SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 310 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: -

PI3WVR628XBEX

Diodes Incorporated

MIPI SWITCH,X1-LGA2417-24,T&R,5K

• Applications: Telecommunications
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: SPDT
• Number of Channels: 3
• On-State Resistance (Max): 5Ohm
• Voltage - Supply, Single (V+): 1.5V ~ 3.6V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 6GHz
• Features: MIPI
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 24-XFLGA
• Supplier Device Package: 24-X1LGA (2.4x1.7)

패키지: -

DMP2021UTSQ-13

Diodes Incorporated

MOSFET BVDSS: 8V 24V TSSOP-8 T&R

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: -

패키지: -

SBR40U100CT-G-2223

Diodes Incorporated

DIODE ARR SBR 100V 40A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 720 mV @ 20 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 100 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

패키지: -

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PI6CG33401ZHIEX

Diodes Incorporated

IC CLOCK GENERATOR 32TQFN

• Type: Clock Generator
• PLL: Yes
• Input: CMOS, Crystal
• Output: HCSL
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/Yes
• Frequency - Max: 100MHz
• Divider/Multiplier: No/No
• Voltage - Supply: 3.135V ~ 3.465V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

패키지: -