페이지 280 - Diodes Incorporated 제품 | Heisener Electronics
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Diodes Incorporated 제품

기록 22,098
페이지  280/790
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hot ZVN4424GTC
Diodes Incorporated

MOSFET N-CH 240V 0.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
  • Vgs (Max): ±40V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
패키지: TO-261-4, TO-261AA
재고145,152
hot ZXMN6A09DN8TC
Diodes Incorporated

MOSFET 2N-CH 60V 4.3A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1407pF @ 40V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고372,300
hot DMP2035UTS-13
Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

  • FET Type: 2 P-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.04A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
  • Power - Max: 890mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,592
hot ZXMC3A16DN8TA
Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A, 4.1A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
  • Power - Max: 1.25W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고457,956
DDTA143ZE-7-F
Diodes Incorporated

TRANS PREBIAS PNP 150MW SOT523

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
패키지: SOT-523
재고143,724
ZUMTS17HTC
Diodes Incorporated

TRANSISTOR RF NPN SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
패키지: SC-70, SOT-323
재고3,200
BZT52C10S-7-F
Diodes Incorporated

DIODE ZENER 10V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 10V
  • Tolerance: ±6%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 7V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
패키지: SC-76, SOD-323
재고70,512
hot S5DC-13
Diodes Incorporated

DIODE GEN PURP 200V 5A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-214AB, SMC
재고39,804
SBG1045CT-T-F
Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고3,024
hot GBU6005
Diodes Incorporated

RECT BRIDGE GPP 6A 50V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고18,576
AP7365-18SNG-7
Diodes Incorporated

IC REG LIN 1.8V 600MA 6DFN2020

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 6V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.6V @ 600mA
  • Current - Output: 600mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 80µA
  • PSRR: 65dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-DFN2020 (2x2)
패키지: 6-UDFN Exposed Pad
재고4,032
AP2401FGE-7
Diodes Incorporated

IC USB SWITCH DFN3030-8

  • Switch Type: USB Switch
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 2.7 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2A
  • Rds On (Typ): 70 mOhm
  • Input Type: Non-Inverting
  • Features: Load Discharge, Status Flag
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: U-DFN3030-8 (Type E)
패키지: 8-UDFN Exposed Pad
재고7,776
PI4ULS3V204GAEX
Diodes Incorporated

IC LEVEL SHIFTER 4BIT 12CSP

  • Translator Type: Voltage Level
  • Channel Type: Bidirectional
  • Number of Circuits: 1
  • Channels per Circuit: 4
  • Voltage - VCCA: 1.1V ~ 3.6V
  • Voltage - VCCB: 1.1V ~ 3.6V
  • Input Signal: -
  • Output Signal: -
  • Output Type: Open Drain, Push-Pull
  • Data Rate: 2Mbps, 24Mbps
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Features: Auto-Direction Sensing
  • Mounting Type: Surface Mount
  • Package / Case: 12-UFBGA, WLCSP
  • Supplier Device Package: 12-CSP (1.87x1.37)
패키지: 12-UFBGA, WLCSP
재고6,144
PI3B16232A
Diodes Incorporated

IC 16:32-BIT BUS SW 56-TSSOP

  • Type: Multiplexer/Demultiplexer
  • Circuit: 16 x 1:2
  • Independent Circuits: 1
  • Current - Output High, Low: -
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.240", 6.10mm Width)
  • Supplier Device Package: 56-TSSOP
패키지: 56-TFSOP (0.240", 6.10mm Width)
재고5,248
hot PI7VD9004AAHFDEX
Diodes Incorporated

VIDEO DECODER LQFP-128

  • Type: Video Decoder
  • Applications: Automotive
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,000
PI3HDMI415-AZDE
Diodes Incorporated

IC DVI/HDMI MUX/DEMUX TQFN

  • Applications: HDMI
  • Interface: -
  • Voltage - Supply: 3.3V
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: 48-TQFN (7x7)
  • Mounting Type: Surface Mount
패키지: 48-VFQFN Exposed Pad
재고5,712
hot PI2EQX8864AZLE
Diodes Incorporated

IC REDRIVER PCIE 4CH 72TQFN

  • Type: Buffer, ReDriver
  • Applications: PCIe
  • Input: -
  • Output: -
  • Data Rate (Max): 8Gbps
  • Number of Channels: 4
  • Delay Time: -
  • Signal Conditioning: -
  • Capacitance - Input: -
  • Voltage - Supply: 1.5V
  • Current - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: 72-WFQFN Exposed Pad
  • Supplier Device Package: 72-TQFN (11x5)
패키지: 72-WFQFN Exposed Pad
재고4,160
PI6C185-01QEX
Diodes Incorporated

IC CLK BUFFER 1:5 140MHZ 16QSOP

  • Type: Fanout Buffer (Distribution)
  • Number of Circuits: 1
  • Ratio - Input:Output: 1:5
  • Differential - Input:Output: No/No
  • Input: TTL
  • Output: TTL
  • Frequency - Max: 140MHz
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SSOP (0.154", 3.90mm Width)
  • Supplier Device Package: 16-QSOP
패키지: 16-SSOP (0.154", 3.90mm Width)
재고4,288
PT7C5006ANEWE
Diodes Incorporated

XO CLOCK SO-8

  • PLL: -
  • Main Purpose: -
  • Input: -
  • Output: -
  • Number of Circuits: -
  • Ratio - Input:Output: -
  • Differential - Input:Output: -
  • Frequency - Max: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,240
PS8A0033PEX
Diodes Incorporated

HEATER CONTROLLER DIP-16

  • Applications: -
  • Current - Supply: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,536
DMN3066LVTQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
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B560C-13-F-2477
Diodes Incorporated

DIODE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
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ES3GB_HF
Diodes Incorporated

SUPERFAST RECOVERY RECTIFIER SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
Request a Quote
DMP45H21DHE-13
Diodes Incorporated

MOSFET P-CH 450V 600MA SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1003 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 12.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 21Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-4, TO-261AA
패키지: -
재고10,437
DMTH43M8LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
패키지: -
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ZXTP03200GTA
Diodes Incorporated

IC TRANSISTOR HIGH VOLT SOT223

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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BC847BVNQ-7
Diodes Incorporated

GENERAL PURPOSE TRANSISTOR SOT56

  • Transistor Type: 1 NPN, 1 PNP Complementary
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 150mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
패키지: -
재고9,000
DMT8008SK3-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
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