페이지 315 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FN7770028	Diodes Incorporated	OSCILLATOR XO 77.76MHZ CMOS SMD Type: XO (Standard) Frequency: 77.76MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±25ppm Operating Temperature: -40°C ~ 85°C Current - Supply (Max): 40mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	패키지: 4-SMD, No Lead	재고6,552
FN0640004	Diodes Incorporated	OSCILLATOR XO 6.4MHZ CMOS SMD Type: XO (Standard) Frequency: 6.4MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -40°C ~ 85°C Current - Supply (Max): 15mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	패키지: 4-SMD, No Lead	재고3,510
ZVN0540A	Diodes Incorporated	MOSFET N-CH 400V 0.09A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 90mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고20,196
BSN20Q-7	Diodes Incorporated	MOSFET NCH 50V 500MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600mW (Ta), 920mW (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 220mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,344
DMN53D0LW-13	Diodes Incorporated	MOSFET N-CH 50V SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 45.8pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	패키지: SC-70, SOT-323	재고5,360
FZT593TA	Diodes Incorporated	TRANS PNP 100V 1A SOT-223 Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 50MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고24,000
DDTA114YUA-7	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT323 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고54,000
DDC144TH-7-F	Diodes Incorporated	TRANS 2NPN PREBIAS 0.15W SOT563 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	패키지: SOT-563, SOT-666	재고5,808
BZX84C3V3T-7-F	Diodes Incorporated	DIODE ZENER 3.3V 150MW SOT523 Voltage - Zener (Nom) (Vz): 3.3V Tolerance: ±6% Power - Max: 150mW Impedance (Max) (Zzt): 95 Ohms Current - Reverse Leakage @ Vr: 5µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: SOT-523	패키지: SOT-523	재고4,768
BZT52C27-7-F	Diodes Incorporated	DIODE ZENER 27V 500MW SOD123 Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7% Power - Max: 500mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100nA @ 18.9V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고6,688
BZT52C2V4-7-F	Diodes Incorporated	DIODE ZENER 2.4V 500MW SOD123 Voltage - Zener (Nom) (Vz): 2.4V Tolerance: ±8% Power - Max: 500mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고95,106
DL4934-13	Diodes Incorporated	DIODE GEN PURP 100V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-213AB, MELF	재고22,320
1N4003-B	Diodes Incorporated	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고6,272
UF1004-T	Diodes Incorporated	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고108,000
MMBD4448HCQW-7	Diodes Incorporated	DIODE ARRAY GP 80V 250MA SOT353 Diode Configuration: 2 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 70V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고6,800
MBR20100CS2-E1	Diodes Incorporated	DIODE ARRAY SCHOTTKY 100V TO263 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,040
ZMR500CSTZ	Diodes Incorporated	IC REG LINEAR 5V 50MA TO92-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 25V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 50mA Current - Quiescent (Iq): - Current - Supply (Max): 70µA PSRR: 72dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: -55°C ~ 125°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,520
AP1084D33G-13	Diodes Incorporated	IC REG LINEAR 3.3V 5A TO252-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 12V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 1.4V @ 5A Current - Output: 5A Current - Quiescent (Iq): - Current - Supply (Max): 10mA PSRR: - Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고526,872
AZ1084CS2-3.3TRG1	Diodes Incorporated	IC REG LINEAR 3.3V 5A TO263-2 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 12V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 1.5V @ 4.5A Current - Output: 5A Current - Quiescent (Iq): - Current - Supply (Max): 10mA PSRR: 72dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,184
AP431AVG-A	Diodes Incorporated	IC VREF SHUNT ADJ TO92 Reference Type: Shunt Output Type: Adjustable Voltage - Output (Min/Fixed): 2.495V Voltage - Output (Max): 36V Current - Output: 200mA Tolerance: ±0.5% Temperature Coefficient: 30ppm/°C Noise - 0.1Hz to 10Hz: - Noise - 10Hz to 10kHz: - Voltage - Input: - Current - Supply: - Current - Cathode: 500µA Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고5,312
AP9101CAK6-AITRG1	Diodes Incorporated	IC BATT PROT LI-ION 1-CELL SOT26 Function: Battery Protection Battery Chemistry: Lithium-Ion/Polymer Number of Cells: 1 Fault Protection: Over Current, Over Voltage Interface: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고3,152
PI6C10807HEX	Diodes Incorporated	IC CLK BUFF 1:10 250MHZ 20SSOP Type: Fanout Buffer (Distribution) Number of Circuits: 1 Ratio - Input:Output: 1:10 Differential - Input:Output: No/No Input: LVCMOS, LVTTL Output: LVCMOS, LVTTL Frequency - Max: 250MHz Voltage - Supply: 1.65 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SSOP (0.209", 5.30mm Width) Supplier Device Package: 20-SSOP	패키지: 20-SSOP (0.209", 5.30mm Width)	재고2,288
AP1506-T5G-U	Diodes Incorporated	IC REG BUCK 3A TO220-5 Function: - Output Configuration: - Topology: - Output Type: - Number of Outputs: - Voltage - Input (Min): - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Current - Output: - Frequency - Switching: - Synchronous Rectifier: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-220-5 Supplier Device Package: TO-220-5	패키지: TO-220-5	재고7,680
DMP3013SFK-13	Diodes Incorporated	MOSFET P-CH 30V 10.5A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta), 19.5W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2523-6 Package / Case: 6-PowerUDFN	패키지: -	Request a Quote
RDBF32-13	Diodes Incorporated	BRIDGE RECTIFIER DBF T&R 3K Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: DBF	패키지: -	재고6,792
DMNH6012SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI506 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	패키지: -	Request a Quote
DMT69M5LFVW-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
AP3706MTR-G1	Diodes Incorporated	IC REG CONTROLLER ACDC Output Isolation: Isolated Internal Switch(s): No Voltage - Breakdown: - Topology: Flyback Voltage - Start Up: 18.5 V Voltage - Supply (Vcc/Vdd): 7.3V ~ 30V Duty Cycle: - Frequency - Switching: - Power (Watts): - Fault Protection: Open Circuit, Over Voltage, Short Circuit Control Features: - Operating Temperature: -40°C ~ 85°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount	패키지: -	Request a Quote

FN7770028

Diodes Incorporated

OSCILLATOR XO 77.76MHZ CMOS SMD

Type: XO (Standard)
Frequency: 77.76MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Current - Supply (Max): 40mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

재고6,552

FN0640004

Diodes Incorporated

OSCILLATOR XO 6.4MHZ CMOS SMD

Type: XO (Standard)
Frequency: 6.4MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -40°C ~ 85°C
Current - Supply (Max): 15mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

재고3,510

ZVN0540A

Diodes Incorporated

MOSFET N-CH 400V 0.09A TO92-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고20,196

BSN20Q-7

Diodes Incorporated

MOSFET NCH 50V 500MA SOT23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 600mW (Ta), 920mW (Tc)
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 220mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,344

DMN53D0LW-13

Diodes Incorporated

MOSFET N-CH 50V SOT323

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 45.8pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

패키지: SC-70, SOT-323

재고5,360

FZT593TA

Diodes Incorporated

TRANS PNP 100V 1A SOT-223

Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Power - Max: 2W
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고24,000

DDTA114YUA-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고54,000

DDC144TH-7-F

Diodes Incorporated

TRANS 2NPN PREBIAS 0.15W SOT563

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

패키지: SOT-563, SOT-666

재고5,808

BZX84C3V3T-7-F

Diodes Incorporated

DIODE ZENER 3.3V 150MW SOT523

Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±6%
Power - Max: 150mW
Impedance (Max) (Zzt): 95 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: SOT-523

패키지: SOT-523

재고4,768

BZT52C27-7-F

Diodes Incorporated

DIODE ZENER 27V 500MW SOD123

Voltage - Zener (Nom) (Vz): 27V
Tolerance: ±7%
Power - Max: 500mW
Impedance (Max) (Zzt): 80 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 18.9V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고6,688

BZT52C2V4-7-F

Diodes Incorporated

DIODE ZENER 2.4V 500MW SOD123

Voltage - Zener (Nom) (Vz): 2.4V
Tolerance: ±8%
Power - Max: 500mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고95,106

DL4934-13

Diodes Incorporated

DIODE GEN PURP 100V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-213AB, MELF

재고22,320

1N4003-B

Diodes Incorporated

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고6,272

UF1004-T

Diodes Incorporated

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고108,000

MMBD4448HCQW-7

Diodes Incorporated

DIODE ARRAY GP 80V 250MA SOT353

Diode Configuration: 2 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 70V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고6,800

MBR20100CS2-E1

Diodes Incorporated

DIODE ARRAY SCHOTTKY 100V TO263

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,040

ZMR500CSTZ

Diodes Incorporated

IC REG LINEAR 5V 50MA TO92-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 25V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 50mA
Current - Quiescent (Iq): -
Current - Supply (Max): 70µA
PSRR: 72dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: -55°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,520

AP1084D33G-13

Diodes Incorporated

IC REG LINEAR 3.3V 5A TO252-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 12V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.4V @ 5A
Current - Output: 5A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA
PSRR: -
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고526,872

AZ1084CS2-3.3TRG1

Diodes Incorporated

IC REG LINEAR 3.3V 5A TO263-2

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 12V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.5V @ 4.5A
Current - Output: 5A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA
PSRR: 72dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,184

AP431AVG-A

Diodes Incorporated

IC VREF SHUNT ADJ TO92

Reference Type: Shunt
Output Type: Adjustable
Voltage - Output (Min/Fixed): 2.495V
Voltage - Output (Max): 36V
Current - Output: 200mA
Tolerance: ±0.5%
Temperature Coefficient: 30ppm/°C
Noise - 0.1Hz to 10Hz: -
Noise - 10Hz to 10kHz: -
Voltage - Input: -
Current - Supply: -
Current - Cathode: 500µA
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고5,312

AP9101CAK6-AITRG1

Diodes Incorporated

IC BATT PROT LI-ION 1-CELL SOT26

Function: Battery Protection
Battery Chemistry: Lithium-Ion/Polymer
Number of Cells: 1
Fault Protection: Over Current, Over Voltage
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고3,152

PI6C10807HEX

Diodes Incorporated

IC CLK BUFF 1:10 250MHZ 20SSOP

Type: Fanout Buffer (Distribution)
Number of Circuits: 1
Ratio - Input:Output: 1:10
Differential - Input:Output: No/No
Input: LVCMOS, LVTTL
Output: LVCMOS, LVTTL
Frequency - Max: 250MHz
Voltage - Supply: 1.65 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 20-SSOP

패키지: 20-SSOP (0.209", 5.30mm Width)

재고2,288

AP1506-T5G-U

Diodes Incorporated

IC REG BUCK 3A TO220-5

Function: -
Output Configuration: -
Topology: -
Output Type: -
Number of Outputs: -
Voltage - Input (Min): -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Current - Output: -
Frequency - Switching: -
Synchronous Rectifier: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-220-5
Supplier Device Package: TO-220-5

패키지: TO-220-5

재고7,680

DMP3013SFK-13

Diodes Incorporated

MOSFET P-CH 30V 10.5A 6UDFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 1W (Ta), 19.5W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2523-6
Package / Case: 6-PowerUDFN

패키지: -

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RDBF32-13

Diodes Incorporated

BRIDGE RECTIFIER DBF T&R 3K

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: DBF

패키지: -

재고6,792

DMNH6012SPSWQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI506

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1926 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI5060-8 (Type UX)
Package / Case: 8-PowerTDFN

패키지: -

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DMT69M5LFVW-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Package / Case: 8-PowerVDFN

패키지: -

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AP3706MTR-G1

Diodes Incorporated

IC REG CONTROLLER ACDC

Output Isolation: Isolated
Internal Switch(s): No
Voltage - Breakdown: -
Topology: Flyback
Voltage - Start Up: 18.5 V
Voltage - Supply (Vcc/Vdd): 7.3V ~ 30V
Duty Cycle: -
Frequency - Switching: -
Power (Watts): -
Fault Protection: Open Circuit, Over Voltage, Short Circuit
Control Features: -
Operating Temperature: -40°C ~ 85°C
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount

패키지: -

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