페이지 682 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
FN1220024	Diodes Incorporated	OSCILLATOR XO 12.288MHZ CMOS SMD Type: XO (Standard) Frequency: 12.288MHz Function: Enable/Disable Output: CMOS Voltage - Supply: 3.3V Frequency Stability: ±50ppm Operating Temperature: -20°C ~ 70°C Current - Supply (Max): 15mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm) Height - Seated (Max): 0.071" (1.80mm)	패키지: 4-SMD, No Lead	재고6,786
DMP2035UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고5,472
DN0150ALP4-7B	Diodes Incorporated	TRANS NPN 50V 0.1A DFN1006H4-3 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 450mW Frequency - Transition: 60MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Supplier Device Package: X2-DFN1006-3	패키지: 3-XFDFN	재고3,200
DDTC144ECA-7	Diodes Incorporated	TRANS PREBIAS NPN 200MW SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고6,176
ZDT6790TC	Diodes Incorporated	TRANS NPN/PNP 45V/40V 2A SM8 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 45V, 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A / 750mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V / 300 @ 10mA, 2V Power - Max: 2.75W Frequency - Transition: 150MHz, 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	패키지: SOT-223-8	재고2,672
BZX84C5V6W-7	Diodes Incorporated	DIODE ZENER 5.6V 200MW SOT323 Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±7% Power - Max: 200mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 1µA @ 2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고5,872
BZT52C18-13	Diodes Incorporated	DIODE ZENER 18V 500MW SOD123 Voltage - Zener (Nom) (Vz): 18V Tolerance: ±6% Power - Max: 500mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 100nA @ 12.6V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고7,408
MMSZ5225B-7-F	Diodes Incorporated	DIODE ZENER 3V 500MW SOD123 Voltage - Zener (Nom) (Vz): 3V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 50µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고2,247,120
MMSZ5233B-7-F	Diodes Incorporated	DIODE ZENER 6V 500MW SOD123 Voltage - Zener (Nom) (Vz): 6V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 5µA @ 3.5V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고172,800
DZ23C47-7-F	Diodes Incorporated	DIODE ZENER ARRAY 47V SOT23-3 Configuration: 1 Pair Common Cathode Voltage - Zener (Nom) (Vz): 47V Tolerance: ±5% Power - Max: 300mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: - Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고7,472
BAS70W-04-7	Diodes Incorporated	DIODE ARRAY SCHOTTKY 70V SOT323 Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io) (per Diode): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100nA @ 50V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	패키지: SC-70, SOT-323	재고4,640
MBR20H100CTF-G1	Diodes Incorporated	DIODE ARRAY SCHOTTKY 100V TO220 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Operating Temperature - Junction: -65°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F-3	패키지: TO-220-3 Full Pack	재고6,688
BAV99BRLP-7	Diodes Incorporated	DIODE ARRAY GP 75V 300MA 6DFN Diode Configuration: 2 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io) (per Diode): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Operating Temperature - Junction: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	패키지: 6-UDFN Exposed Pad	재고2,286,000
74LVC2G32RA3-7	Diodes Incorporated	IC GATE OR 2CH 2-INP 8-DFN1210 Logic Type: OR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 40µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: X2-DFN1210-8 Package / Case: 8-XFDFN	패키지: 8-XFDFN	재고5,472
74LVC1G14SE-7	Diodes Incorporated	IC SGL SCHMITT INVERTER SOT353 Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 200µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: 0.3 V ~ 1.45 V Logic Level - High: 1.2 V ~ 3.33 V Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: SOT-353 Package / Case: 5-TSSOP, SC-70-5, SOT-353	패키지: 5-TSSOP, SC-70-5, SOT-353	재고8,508
PI6C49X0204BWIEX	Diodes Incorporated	1 TO 4 LVCMOS/ LVTTL FANOUT BUFF Type: - Number of Circuits: - Ratio - Input:Output: - Differential - Input:Output: - Input: - Output: - Frequency - Max: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,496
1.5KE9V1CA-B	Diodes Incorporated	TVS DIODE 7.78VWM 13.4VC DO201A Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 7.78V Voltage - Breakdown (Min): 8.65V Voltage - Clamping (Max) @ Ipp: 13.4V Current - Peak Pulse (10/1000µs): 112A Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201	패키지: DO-201AA, DO-27, Axial	재고6,552
SMAJ40CA-13	Diodes Incorporated	TVS DIODE 40VWM 64.5VC SMA Type: Zener Unidirectional Channels: - Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 40V Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Current - Peak Pulse (10/1000µs): 6.2A Power - Peak Pulse: 400W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA	패키지: DO-214AC, SMA	재고56,040
AH1808-W-7	Diodes Incorporated	MAGNETIC SWITCH OMNIPOLAR SC59 Function: Omnipolar Switch Technology: Hall Effect Polarization: Either Sensing Range: ±6mT Trip, ±5mT Release Test Condition: -40°C ~ 85°C Voltage - Supply: 2.5 V ~ 5.5 V Current - Supply (Max): 16µA Current - Output (Max): 2.5mA Output Type: Open Drain Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59	패키지: TO-236-3, SC-59, SOT-23-3	재고29,100
PI5PD2069WE+CX	Diodes Incorporated	USB POWER SWITCH SO-8 T&R 3K Protocol: - Function: - Interface: - Standards: - Voltage - Supply: - Current - Supply: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,688
PI6CB33802ZLIEX-13R	Diodes Incorporated	IC CLK BUF 1:8 133.46MHZ 48TQFN Type: Clock Buffer Number of Circuits: 1 Ratio - Input:Output: 1:8 Differential - Input:Output: Yes/Yes Input: CMOS, HCSL Output: HCSL Frequency - Max: 133.46 MHz Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-TQFN (6x6)	패키지: -	재고18,000
DMPH4026SFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
DMTH45M5LFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
1N4148WS-13-G	Diodes Incorporated	DIODE GEN PURP 75V 150MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 1 µA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: -	Request a Quote
DMP2045UFY4-7	Diodes Incorporated	MOSFET P-CH 20V 4.7A X2-DFN2015 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 670mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X2-DFN2015-3 Package / Case: 3-XDFN	패키지: -	재고8,742
DMP1012UFDF-13	Diodes Incorporated	MOSFET P-CH 12V 12.6A/20A 6UDFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 720mW (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	패키지: -	Request a Quote
BZT52C11SQ-7-F	Diodes Incorporated	ZENER DIODE SOD323 T&R 3K Voltage - Zener (Nom) (Vz): 11 V Tolerance: ±5.45% Power - Max: 200 mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 8 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323	패키지: -	Request a Quote
DMP2036UVT-7	Diodes Incorporated	MOSFET P-CH 20V 6A TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	패키지: -	Request a Quote

FN1220024

Diodes Incorporated

OSCILLATOR XO 12.288MHZ CMOS SMD

Type: XO (Standard)
Frequency: 12.288MHz
Function: Enable/Disable
Output: CMOS
Voltage - Supply: 3.3V
Frequency Stability: ±50ppm
Operating Temperature: -20°C ~ 70°C
Current - Supply (Max): 15mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
Height - Seated (Max): 0.071" (1.80mm)

패키지: 4-SMD, No Lead

재고6,786

DMP2035UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 8V 24V TSOT26

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSOT-26
Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고5,472

DN0150ALP4-7B

Diodes Incorporated

TRANS NPN 50V 0.1A DFN1006H4-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 450mW
Frequency - Transition: 60MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: X2-DFN1006-3

패키지: 3-XFDFN

재고3,200

DDTC144ECA-7

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고6,176

ZDT6790TC

Diodes Incorporated

TRANS NPN/PNP 45V/40V 2A SM8

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 45V, 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A / 750mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V / 300 @ 10mA, 2V
Power - Max: 2.75W
Frequency - Transition: 150MHz, 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

패키지: SOT-223-8

재고2,672

BZX84C5V6W-7

Diodes Incorporated

DIODE ZENER 5.6V 200MW SOT323

Voltage - Zener (Nom) (Vz): 5.6V
Tolerance: ±7%
Power - Max: 200mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고5,872

BZT52C18-13

Diodes Incorporated

DIODE ZENER 18V 500MW SOD123

Voltage - Zener (Nom) (Vz): 18V
Tolerance: ±6%
Power - Max: 500mW
Impedance (Max) (Zzt): 45 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 12.6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고7,408

MMSZ5225B-7-F

Diodes Incorporated

DIODE ZENER 3V 500MW SOD123

Voltage - Zener (Nom) (Vz): 3V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고2,247,120

MMSZ5233B-7-F

Diodes Incorporated

DIODE ZENER 6V 500MW SOD123

Voltage - Zener (Nom) (Vz): 6V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 7 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123

패키지: SOD-123

재고172,800

DZ23C47-7-F

Diodes Incorporated

DIODE ZENER ARRAY 47V SOT23-3

Configuration: 1 Pair Common Cathode
Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±5%
Power - Max: 300mW
Impedance (Max) (Zzt): 100 Ohms
Current - Reverse Leakage @ Vr: -
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고7,472

BAS70W-04-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 70V SOT323

Diode Configuration: 1 Pair Series Connection
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

재고4,640

MBR20H100CTF-G1

Diodes Incorporated

DIODE ARRAY SCHOTTKY 100V TO220

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3

패키지: TO-220-3 Full Pack

재고6,688

BAV99BRLP-7

Diodes Incorporated

DIODE ARRAY GP 75V 300MA 6DFN

Diode Configuration: 2 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io) (per Diode): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 2.5µA @ 75V
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

패키지: 6-UDFN Exposed Pad

재고2,286,000

74LVC2G32RA3-7

Diodes Incorporated

IC GATE OR 2CH 2-INP 8-DFN1210

Logic Type: OR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 40µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN1210-8
Package / Case: 8-XFDFN

패키지: 8-XFDFN

재고5,472

74LVC1G14SE-7

Diodes Incorporated

IC SGL SCHMITT INVERTER SOT353

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: Schmitt Trigger
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 200µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: 0.3 V ~ 1.45 V
Logic Level - High: 1.2 V ~ 3.33 V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-353
Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

재고8,508

PI6C49X0204BWIEX

Diodes Incorporated

1 TO 4 LVCMOS/ LVTTL FANOUT BUFF

Type: -
Number of Circuits: -
Ratio - Input:Output: -
Differential - Input:Output: -
Input: -
Output: -
Frequency - Max: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,496

1.5KE9V1CA-B

Diodes Incorporated

TVS DIODE 7.78VWM 13.4VC DO201A

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 7.78V
Voltage - Breakdown (Min): 8.65V
Voltage - Clamping (Max) @ Ipp: 13.4V
Current - Peak Pulse (10/1000µs): 112A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201

패키지: DO-201AA, DO-27, Axial

재고6,552

SMAJ40CA-13

Diodes Incorporated

TVS DIODE 40VWM 64.5VC SMA

Type: Zener
Unidirectional Channels: -
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 40V
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Current - Peak Pulse (10/1000µs): 6.2A
Power - Peak Pulse: 400W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA

패키지: DO-214AC, SMA

재고56,040

AH1808-W-7

Diodes Incorporated

MAGNETIC SWITCH OMNIPOLAR SC59

Function: Omnipolar Switch
Technology: Hall Effect
Polarization: Either
Sensing Range: ±6mT Trip, ±5mT Release
Test Condition: -40°C ~ 85°C
Voltage - Supply: 2.5 V ~ 5.5 V
Current - Supply (Max): 16µA
Current - Output (Max): 2.5mA
Output Type: Open Drain
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59

패키지: TO-236-3, SC-59, SOT-23-3

재고29,100

PI5PD2069WE+CX

Diodes Incorporated

USB POWER SWITCH SO-8 T&R 3K

Protocol: -
Function: -
Interface: -
Standards: -
Voltage - Supply: -
Current - Supply: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,688

PI6CB33802ZLIEX-13R

Diodes Incorporated

IC CLK BUF 1:8 133.46MHZ 48TQFN

Type: Clock Buffer
Number of Circuits: 1
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Input: CMOS, HCSL
Output: HCSL
Frequency - Max: 133.46 MHz
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-TQFN (6x6)

패키지: -

재고18,000

DMPH4026SFVWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Package / Case: 8-PowerVDFN

패키지: -

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DMTH45M5LFVWQ-13

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Package / Case: 8-PowerVDFN

패키지: -

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1N4148WS-13-G

Diodes Incorporated

DIODE GEN PURP 75V 150MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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DMP2045UFY4-7

Diodes Incorporated

MOSFET P-CH 20V 4.7A X2-DFN2015

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 670mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN2015-3
Package / Case: 3-XDFN

패키지: -

재고8,742

DMP1012UFDF-13

Diodes Incorporated

MOSFET P-CH 12V 12.6A/20A 6UDFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 720mW (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad

패키지: -

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BZT52C11SQ-7-F

Diodes Incorporated

ZENER DIODE SOD323 T&R 3K

Voltage - Zener (Nom) (Vz): 11 V
Tolerance: ±5.45%
Power - Max: 200 mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323

패키지: -

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DMP2036UVT-7

Diodes Incorporated

MOSFET P-CH 20V 6A TSOT26

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSOT-26
Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: -

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