Diodes Incorporated 제품

PBF620009

Diodes Incorporated

OSCILLATOR XO 156.25MHZ PECL SMD

• Type: XO (Standard)
• Frequency: 156.25MHz
• Function: Enable/Disable
• Output: PECL
• Voltage - Supply: 3.3V
• Frequency Stability: ±50ppm
• Operating Temperature: -20°C ~ 70°C
• Current - Supply (Max): 88mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, No Lead
• Size / Dimension: 0.276" L x 0.197" W (7.00mm x 5.00mm)
• Height - Seated (Max): 0.079" (2.00mm)

패키지: 6-SMD, No Lead

FK1920012

Diodes Incorporated

OSCILLATOR XO 19.2MHZ CMOS SMD

• Type: XO (Standard)
• Frequency: 19.2MHz
• Function: Enable/Disable
• Output: CMOS
• Voltage - Supply: 1.8V
• Frequency Stability: ±25ppm
• Operating Temperature: -40°C ~ 85°C
• Current - Supply (Max): 4mA
• Ratings: -
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.045" (1.15mm)

패키지: 4-SMD, No Lead

DMP2010UFG-13

Diodes Incorporated

MOSFET P-CH 20V 12.7A PWRDI3333

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 900mW (Ta)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

DMT2004UFDF-13

Diodes Incorporated

MOSFET NCH 24V 14.1A UDFN2020

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 24V
• Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta), 12.5W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

패키지: 6-UDFN Exposed Pad

DMP2018LFK-7

Diodes Incorporated

MOSFET P-CH 20V 9.2A 6-DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4748pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2523-6
• Package / Case: 6-PowerUDFN

패키지: 6-PowerUDFN

DMN2041L-7

Diodes Incorporated

MOSFET N-CH 20V 6.4A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 780mW (Ta)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

2DB1188P-13

Diodes Incorporated

TRANS PNP 32V 2A SOT89-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
• Power - Max: 1W
• Frequency - Transition: 120MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

DDTB113EU-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT323

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 1k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: SC-70, SOT-323

DDA114YU-7-F

Diodes Incorporated

TRANS 2PNP PREBIAS 0.2W SOT363

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

패키지: 6-TSSOP, SC-88, SOT-363

DDZ26Q-7

Diodes Incorporated

DIODE ZENER SOD123

• Voltage - Zener (Nom) (Vz): 25.62V
• Tolerance: ±3%
• Power - Max: 310mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

MBR3100VPTR-G1

Diodes Incorporated

DIODE SCHOTTKY 100V 3A DO27

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-27
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AA, DO-27, Axial

PR1003-T

Diodes Incorporated

DIODE GEN PURP 200V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

SBR10E45P5-13

Diodes Incorporated

DIODE SBR 45V 10A POWERDI5

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 470mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 280µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: PowerDI? 5
• Supplier Device Package: PowerDI?5
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: PowerDI? 5

AP7343-12W5-7

Diodes Incorporated

IC REG LINEAR 300MA SOT25

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

ZXCL5213V25H5TA

Diodes Incorporated

IC REG LINEAR 2.5V 100MA SC70-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.325V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 50µA ~ 120µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 5-TSSOP, SC-70-5, SOT-353
• Supplier Device Package: SC-70-5

패키지: 5-TSSOP, SC-70-5, SOT-353

PT8A3247PE

Diodes Incorporated

HEATER CONTROLLER PDIP-8

• Applications: -
• Current - Supply: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

AL5801W6-7

Diodes Incorporated

IC LED DRVR LIN DIM 350MA SOT26

• Type: Linear
• Topology: -
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 3.5V
• Voltage - Supply (Max): 20V
• Voltage - Output: 1.1 V ~ 100 V
• Current - Output / Channel: 350mA
• Frequency: -
• Dimming: PWM
• Applications: Signage
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

패키지: SOT-23-6

GP168MTR-G1

Diodes Incorporated

IC REG CTLR AC/DC GEN3

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

패키지: -

74AHC1G00SE-7

Diodes Incorporated

IC GATE NAND 1CH 2-INP SOT-353

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.5 V ~ 1.65 V
• Logic Level - High: 1.5 V ~ 3.85 V
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-353
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

패키지: 5-TSSOP, SC-70-5, SOT-353

PI49FCT3806HE

Diodes Incorporated

IC CLK BUFFER 1:5 50MHZ 20SSOP

• Type: Fanout Buffer (Distribution)
• Number of Circuits: 2
• Ratio - Input:Output: 1:5
• Differential - Input:Output: No/No
• Input: CMOS, TTL
• Output: CMOS
• Frequency - Max: 50MHz
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 20-SSOP

패키지: 20-SSOP (0.209", 5.30mm Width)

PI6C10807HE-2017

Diodes Incorporated

CLOCK BUFFER SSOP-20

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI6LC48P03AZHIEX

Diodes Incorporated

3-OUTPUT LVPECL NETWORKING CLOCK

• PLL: -
• Main Purpose: -
• Input: -
• Output: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PI6C557-05BLE

Diodes Incorporated

IC CLOCK GENERATOR 20-TSSOP

• PLL: Yes
• Main Purpose: Ethernet, PCI Express (PCIe)
• Input: HCSL, Crystal
• Output: HCSL, LVDS
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: No/Yes
• Frequency - Max: 200MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width)

AH175-PG-B-A

Diodes Incorporated

MAGNETIC SWITCH LATCH 3SIP

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 6mT Trip, -6mT Release
• Test Condition: 25°C
• Voltage - Supply: 3.5 V ~ 20 V
• Current - Supply (Max): 6mA
• Current - Output (Max): 25mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: 3-SIP
• Supplier Device Package: 3-SIP

패키지: 3-SIP

AH41Z3-BG1

Diodes Incorporated

MAGNETIC SWITCH LATCH TO92S

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 10.5mT Trip, -10.5mT Release
• Test Condition: 25°C
• Voltage - Supply: 4 V ~ 24 V
• Current - Supply (Max): 9mA
• Current - Output (Max): 50mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TA)
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92S

패키지: TO-226-3, TO-92-3 (TO-226AA)

BAS40W-04-7-F-79

Diodes Incorporated

DIODE ARR SCHOT 40V 200MA SOT323

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 30 V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

패키지: -

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SF20GG_HF

Diodes Incorporated

SUPERFAST RECOVERY RECTIFIER DO-

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: 75pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-15
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: -

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DMTH43M7LFGQ-13-A

Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: POWERDI3333-8
• Package / Case: 8-PowerVDFN

패키지: -

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