페이지 87 - Diodes Incorporated 제품

부품 번호	제조업체	설명	패키지	재고
WT325BI0030.000000	Diodes Incorporated	OSC TCXO 30.000MHZ CLP SNWV SMD Type: TCXO Frequency: 30MHz Function: - Output: Clipped Sine Wave Voltage - Supply: 3V Frequency Stability: ±2ppm Operating Temperature: -30°C ~ 85°C Current - Supply (Max): 2mA Ratings: - Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.047" (1.20mm)	패키지: 4-SMD, No Lead	재고5,904
GC1200052	Diodes Incorporated	CRYSTAL 12.0000MHZ 18PF SMD Type: MHz Crystal Frequency: 12MHz Frequency Stability: ±20ppm Frequency Tolerance: ±20ppm Load Capacitance: 18pF ESR (Equivalent Series Resistance): 60 Ohm Operating Mode: Fundamental Operating Temperature: -40°C ~ 85°C Ratings: - Mounting Type: Surface Mount Package / Case: HC49/US Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm) Height - Seated (Max): 0.165" (4.20mm)	패키지: HC49/US	재고4,158
DMN90H8D5HCT	Diodes Incorporated	MOSFET BVDSS: >800V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고2,480
DMTH6010SK3-13	Diodes Incorporated	MOSFET N-CH 60V 16.3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,824
DMPH6050SK3-13	Diodes Incorporated	MOSFET P-CH 60V 7.2A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고25,302
DMTH4007SPDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V POWERDI506 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Power - Max: 2.6W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	패키지: 8-PowerTDFN	재고5,952
ZXTN2011ZTA	Diodes Incorporated	TRANS NPN 100V 4.5A SOT89 Transistor Type: NPN Current - Collector (Ic) (Max): 4.5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Power - Max: 2.1W Frequency - Transition: 130MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89-3	패키지: TO-243AA	재고69,204
DDTA143ZKA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SC59-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,640
DDTA114GKA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SC59-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59-3	패키지: TO-236-3, SC-59, SOT-23-3	재고288,000
DDTA143XCA-7-F	Diodes Incorporated	TRANS PREBIAS PNP 200MW SOT23-3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고58,116
AP1117T33G-U	Diodes Incorporated	IC REG LINEAR 3.3V 1A TO220-3 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 18V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 1.4V @ 1A Current - Output: 1A Current - Quiescent (Iq): - Current - Supply (Max): 10mA PSRR: 60dB (180Hz) Control Features: - Protection Features: Over Current, Over Temperature Operating Temperature: 0°C ~ 125°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	패키지: TO-220-3	재고6,912
APX803S00-31SR-7	Diodes Incorporated	RESET GENERATOR SOT23 Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active Low Reset Timeout: 1 ms Minimum Voltage - Threshold: 3.08V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,952
AP9214LA-AI-HSBR-7	Diodes Incorporated	IC BATT PROT LI-ION U-DFN2535 Function: Battery Protection Battery Chemistry: Lithium-Ion/Polymer Number of Cells: 1 Fault Protection: Over Current, Over Voltage, Short Circuit Interface: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2535-6	패키지: 6-UDFN Exposed Pad	재고3,312
PI5C3245S	Diodes Incorporated	IC 8BIT 2PORT BUS SWITCH 20SOIC Type: Bus Switch Circuit: 8 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	패키지: 20-SOIC (0.295", 7.50mm Width)	재고4,752
PI3B3245SE	Diodes Incorporated	BUS SWITCH 3V SO-20 Type: - Circuit: - Independent Circuits: - Current - Output High, Low: - Voltage Supply Source: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,552
74AUP1G14FX4-7	Diodes Incorporated	IC INV SCHMITT-TRIG DFN1410-6 Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 0.8 V ~ 3.6 V Current - Quiescent (Max): 0.5µA Current - Output High, Low: 4mA, 4mA Logic Level - Low: 0.15 V ~ 0.88 V Logic Level - High: 0.65 V ~ 2.32 V Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: X2-DFN1409-6 Package / Case: 6-XFDFN	패키지: 6-XFDFN	재고4,944
PI74FCT2244ATS	Diodes Incorporated	IC BUFF/DVR DUAL N-INV 20SOIC Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 15mA, 64mA Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	패키지: 20-SOIC (0.295", 7.50mm Width)	재고7,568
SMBJ130A-13	Diodes Incorporated	TVS DIODE 130VWM 209VC SMB Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 130V Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Current - Peak Pulse (10/1000µs): 2.9A Power - Peak Pulse: 600W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB	패키지: DO-214AA, SMB	재고4,032
D5V0F4U5P5-7	Diodes Incorporated	TVS DIODE 5.5VWM 12.5VC SOT953 Type: Steering (Rail to Rail) Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5.5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12.5V Current - Peak Pulse (10/1000µs): 2A (8/20µs) Power - Peak Pulse: - Power Line Protection: Yes Applications: Automotive, HDMI Capacitance @ Frequency: 0.5pF @ 1MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-953 Supplier Device Package: SOT-953	패키지: SOT-953	재고3,006
PI3EQX1004B1ZHEX	Diodes Incorporated	USB3 EQX V-QFN3590-42 Type: Buffer, ReDriver Applications: USB 3.0 Input: CML Output: CML Data Rate (Max): 10Gbps Number of Channels: 4 Delay Time: - Signal Conditioning: Input Equalization Capacitance - Input: - Voltage - Supply: 3 V ~ 3.6 V Current - Supply: - Operating Temperature: 125°C (TJ) Mounting Type: - Package / Case: 42-VFQFN Exposed Pad Supplier Device Package: 42-TQFN (9x3.5)	패키지: 42-VFQFN Exposed Pad	재고4,512
AP9101CK-BFTRG1	Diodes Incorporated	MULTICELL BATT MANAGER SOT25 Function: Battery Protection Battery Chemistry: Lithium Ion/Polymer Number of Cells: 1 Fault Protection: Over Current, Over Voltage Interface: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: SC-74A, SOT-753	재고3,040
VN10LPSTZ	Diodes Incorporated	MOSFET VMOS N-CHAN TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3, Formed Leads	패키지: -	Request a Quote
DMT68M8LFV-13	Diodes Incorporated	MOSFET N-CH 60V 54.1A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	패키지: -	Request a Quote
AP7361EA-18ER-13	Diodes Incorporated	LDO CMOS HICURR SOT223 T&R 2.5K Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 1A Current - Quiescent (Iq): 91 µA Current - Supply (Max): - PSRR: - Control Features: Current Limit Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223R	패키지: -	재고7,425
DMP2042UCP4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X1-DSN1010- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: X1-DSN1010-4 (Type C) Package / Case: 4-XFBGA	패키지: -	재고8,880
DMN2024UFDF-7	Diodes Incorporated	MOSFET N-CH 20V 7.1A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	패키지: -	재고9,000
SDM02A30APS-7B	Diodes Incorporated	SCHOTTKY DIODE X1-DFN1006-2(TYPE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote
APX803L20-14W5-7	Diodes Incorporated	Reset Generator SOT25 T&R 3K Type: Voltage Detector Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active Low Reset Timeout: 143ms Minimum Voltage - Threshold: 1.4V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-25	패키지: -	Request a Quote

WT325BI0030.000000

Diodes Incorporated

OSC TCXO 30.000MHZ CLP SNWV SMD

Type: TCXO
Frequency: 30MHz
Function: -
Output: Clipped Sine Wave
Voltage - Supply: 3V
Frequency Stability: ±2ppm
Operating Temperature: -30°C ~ 85°C
Current - Supply (Max): 2mA
Ratings: -
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.047" (1.20mm)

패키지: 4-SMD, No Lead

재고5,904

GC1200052

Diodes Incorporated

CRYSTAL 12.0000MHZ 18PF SMD

Type: MHz Crystal
Frequency: 12MHz
Frequency Stability: ±20ppm
Frequency Tolerance: ±20ppm
Load Capacitance: 18pF
ESR (Equivalent Series Resistance): 60 Ohm
Operating Mode: Fundamental
Operating Temperature: -40°C ~ 85°C
Ratings: -
Mounting Type: Surface Mount
Package / Case: HC49/US
Size / Dimension: 0.461" L x 0.189" W (11.70mm x 4.80mm)
Height - Seated (Max): 0.165" (4.20mm)

패키지: HC49/US

재고4,158

DMN90H8D5HCT

Diodes Incorporated

MOSFET BVDSS: >800V TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고2,480

DMTH6010SK3-13

Diodes Incorporated

MOSFET N-CH 60V 16.3A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,824

DMPH6050SK3-13

Diodes Incorporated

MOSFET P-CH 60V 7.2A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고25,302

DMTH4007SPDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V POWERDI506

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Power - Max: 2.6W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

패키지: 8-PowerTDFN

재고5,952

ZXTN2011ZTA

Diodes Incorporated

TRANS NPN 100V 4.5A SOT89

Transistor Type: NPN
Current - Collector (Ic) (Max): 4.5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Power - Max: 2.1W
Frequency - Transition: 130MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3

패키지: TO-243AA

재고69,204

DDTA143ZKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,640

DDTA114GKA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SC59-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59-3

패키지: TO-236-3, SC-59, SOT-23-3

재고288,000

DDTA143XCA-7-F

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고58,116

AP1117T33G-U

Diodes Incorporated

IC REG LINEAR 3.3V 1A TO220-3

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 18V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.4V @ 1A
Current - Output: 1A
Current - Quiescent (Iq): -
Current - Supply (Max): 10mA
PSRR: 60dB (180Hz)
Control Features: -
Protection Features: Over Current, Over Temperature
Operating Temperature: 0°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3

패키지: TO-220-3

재고6,912

APX803S00-31SR-7

Diodes Incorporated

RESET GENERATOR SOT23

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: 1 ms Minimum
Voltage - Threshold: 3.08V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,952

AP9214LA-AI-HSBR-7

Diodes Incorporated

IC BATT PROT LI-ION U-DFN2535

Function: Battery Protection
Battery Chemistry: Lithium-Ion/Polymer
Number of Cells: 1
Fault Protection: Over Current, Over Voltage, Short Circuit
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2535-6

패키지: 6-UDFN Exposed Pad

재고3,312

PI5C3245S

Diodes Incorporated

IC 8BIT 2PORT BUS SWITCH 20SOIC

Type: Bus Switch
Circuit: 8 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

패키지: 20-SOIC (0.295", 7.50mm Width)

재고4,752

PI3B3245SE

Diodes Incorporated

BUS SWITCH 3V SO-20

Type: -
Circuit: -
Independent Circuits: -
Current - Output High, Low: -
Voltage Supply Source: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,552

74AUP1G14FX4-7

Diodes Incorporated

IC INV SCHMITT-TRIG DFN1410-6

Logic Type: Inverter
Number of Circuits: 1
Number of Inputs: 1
Features: Schmitt Trigger
Voltage - Supply: 0.8 V ~ 3.6 V
Current - Quiescent (Max): 0.5µA
Current - Output High, Low: 4mA, 4mA
Logic Level - Low: 0.15 V ~ 0.88 V
Logic Level - High: 0.65 V ~ 2.32 V
Max Propagation Delay @ V, Max CL: 6.1ns @ 3.3V, 30pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: X2-DFN1409-6
Package / Case: 6-XFDFN

패키지: 6-XFDFN

재고4,944

PI74FCT2244ATS

Diodes Incorporated

IC BUFF/DVR DUAL N-INV 20SOIC

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 15mA, 64mA
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

패키지: 20-SOIC (0.295", 7.50mm Width)

재고7,568

SMBJ130A-13

Diodes Incorporated

TVS DIODE 130VWM 209VC SMB

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 130V
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Current - Peak Pulse (10/1000µs): 2.9A
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB

패키지: DO-214AA, SMB

재고4,032

D5V0F4U5P5-7

Diodes Incorporated

TVS DIODE 5.5VWM 12.5VC SOT953

Type: Steering (Rail to Rail)
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: Yes
Applications: Automotive, HDMI
Capacitance @ Frequency: 0.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-953
Supplier Device Package: SOT-953

패키지: SOT-953

재고3,006

PI3EQX1004B1ZHEX

Diodes Incorporated

USB3 EQX V-QFN3590-42

Type: Buffer, ReDriver
Applications: USB 3.0
Input: CML
Output: CML
Data Rate (Max): 10Gbps
Number of Channels: 4
Delay Time: -
Signal Conditioning: Input Equalization
Capacitance - Input: -
Voltage - Supply: 3 V ~ 3.6 V
Current - Supply: -
Operating Temperature: 125°C (TJ)
Mounting Type: -
Package / Case: 42-VFQFN Exposed Pad
Supplier Device Package: 42-TQFN (9x3.5)

패키지: 42-VFQFN Exposed Pad

재고4,512

AP9101CK-BFTRG1

Diodes Incorporated

MULTICELL BATT MANAGER SOT25

Function: Battery Protection
Battery Chemistry: Lithium Ion/Polymer
Number of Cells: 1
Fault Protection: Over Current, Over Voltage
Interface: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: SC-74A, SOT-753

재고3,040

VN10LPSTZ

Diodes Incorporated

MOSFET VMOS N-CHAN TO92-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3, Formed Leads

패키지: -

Request a Quote

DMT68M8LFV-13

Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8 (Type UX)
Package / Case: 8-PowerVDFN

패키지: -

Request a Quote

AP7361EA-18ER-13

Diodes Incorporated

LDO CMOS HICURR SOT223 T&R 2.5K

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 1A
Current - Quiescent (Iq): 91 µA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223R

패키지: -

재고7,425

DMP2042UCP4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DSN1010-

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Vgs (Max): -6V
FET Feature: -
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: X1-DSN1010-4 (Type C)
Package / Case: 4-XFBGA

패키지: -

재고8,880

DMN2024UFDF-7

Diodes Incorporated

MOSFET N-CH 20V 7.1A 6UDFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2020-6 (Type F)
Package / Case: 6-UDFN Exposed Pad

패키지: -

재고9,000

SDM02A30APS-7B

Diodes Incorporated

SCHOTTKY DIODE X1-DFN1006-2(TYPE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

APX803L20-14W5-7

Diodes Incorporated

Reset Generator SOT25 T&R 3K

Type: Voltage Detector
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: 143ms Minimum
Voltage - Threshold: 1.4V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-25

패키지: -

Request a Quote