페이지 5 - Fairchild/ON Semiconductor 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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Fairchild/ON Semiconductor 제품 - 다이오드 - 정류기 - 단일

기록 768
페이지  5/28
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N458ATR
Fairchild/ON Semiconductor

DIODE GEN PURP 150V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25µA @ 125V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-204AH, DO-35, Axial
재고829,110
150V
500mA
1V @ 100mA
Standard Recovery >500ns, > 200mA (Io)
-
25µA @ 125V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
hot RHRG5060
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 50A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-247-2
재고41,280
600V
50A
2.1V @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
FFH30S60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-247-2
재고7,440
600V
30A
2.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 150°C
ISL9R3060P2
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고7,608
600V
30A
2.4V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
hot RURG3060
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-247-2
재고108,888
600V
30A
1.5V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
250µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 175°C
FFPF30UP20STU
Fairchild/ON Semiconductor

DIODE GEN PURP 200V 30A TO220F

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2 Full Pack
재고13,944
200V
30A
1.15V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100µA @ 200V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
hot RHRP1560
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 15A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고74,244
600V
15A
2.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
100µA @ 600V
-
Through Hole
TO-220-2
TO-220-2L
-65°C ~ 175°C
hot RURP8100
Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-220-2
재고115,596
1000V
8A
1.8V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
100µA @ 1000V
-
Through Hole
TO-220-2
TO-220-2L
-55°C ~ 175°C
hot ISL9R460PF2
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 4A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 2.4V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 22ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-220-2 Full Pack
재고69,288
600V
4A
2.4V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-55°C ~ 150°C
hot FFPF30UA60S
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 30A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 90ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-2 Full Pack
재고288,408
600V
30A
2.2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
100µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-65°C ~ 150°C
hot SB5100
Fairchild/ON Semiconductor

DIODE SCHOTTKY 100V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 100V
  • Capacitance @ Vr, F: 380pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-201AD, Axial
재고1,976,328
100V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
380pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FS8M
Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 8A TO277-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3.37µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 118pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277-3
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-277, 3-PowerDFN
재고98,478
1000V
8A
1.1V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
3.37µs
5µA @ 1000V
118pF @ 0V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277-3
-55°C ~ 150°C
hot SB580
Fairchild/ON Semiconductor

DIODE SCHOTTKY 80V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 80V
  • Capacitance @ Vr, F: 380pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-201AD, Axial
재고15,000
80V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 80V
380pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot S210
Fairchild/ON Semiconductor

DIODE SCHOTTKY 100V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-214AA, SMB
재고786,060
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 100V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-65°C ~ 125°C
hot FYD0504SATM
Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 5A DPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고65,364
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 40V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
-65°C ~ 150°C
hot 1N5822
Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 190pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고4,455,396
40V
3A
525mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
190pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C
hot SB560
Fairchild/ON Semiconductor

DIODE SCHOTTKY 60V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 380pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-201AD, Axial
재고1,692,384
60V
5A
670mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
380pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot BAV21
Fairchild/ON Semiconductor

DIODE GEN PURP 250V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-204AH, DO-35, Axial
재고404,460
250V
200mA
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
hot SS32
Fairchild/ON Semiconductor

DIODE SCHOTTKY 20V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고2,391,348
20V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
SB530
Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-201AD, Axial
재고53,694
30V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
500pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot SB540
Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-201AD, Axial
재고2,977,452
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
500pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
hot 1N457
Fairchild/ON Semiconductor

DIODE GEN PURP 70V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25nA @ 60V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-204AH, DO-35, Axial
재고9,588
70V
200mA
1V @ 20mA
Small Signal =< 200mA (Io), Any Speed
-
25nA @ 60V
8pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
1N456A
Fairchild/ON Semiconductor

DIODE GEN PURP 30V 500MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25nA @ 25V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-204AH, DO-35, Axial
재고47,760
30V
500mA
1V @ 100mA
Standard Recovery >500ns, > 200mA (Io)
-
25nA @ 25V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
hot 1N457A
Fairchild/ON Semiconductor

DIODE GEN PURP 70V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25nA @ 60V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
패키지: DO-204AH, DO-35, Axial
재고45,912
70V
200mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
25nA @ 60V
8pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
hot SS35
Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고154,476
50V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-55°C ~ 150°C
hot 1N5820
Fairchild/ON Semiconductor

DIODE SCHOTTKY 20V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 475mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 20V
  • Capacitance @ Vr, F: 190pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고24,624
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
190pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C
hot 1N5821
Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 190pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고30,360
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
190pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C
hot SB340
Fairchild/ON Semiconductor

DIODE SCHOTTKY 40V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 40V
  • Capacitance @ Vr, F: 180pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고822,780
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
180pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 125°C