페이지 5 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FDS8949_F085	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,688	Logic Level Gate	40V	6A	29 mOhm @ 6A, 10V	3V @ 250µA	11nC @ 5V	955pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS3660AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/30A 8QFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고5,040	Logic Level Gate	30V	13A, 30A	8 mOhm @ 13A, 10V	2.7V @ 250µA	30nC @ 10V	2230pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMC7208S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/16A PWR33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고6,656	Logic Level Gate	30V	12A, 16A	9 mOhm @ 12A, 10V	3V @ 250µA	18nC @ 10V	1130pF @ 15V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
FDMS3610S	Fairchild/ON Semiconductor	MOSFET 2N-CH 25V 17.5A/30A 8-MLP FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고7,376	Logic Level Gate	25V	17.5A, 30A	5 mOhm @ 17.5A, 10V	2V @ 250µA	26nC @ 10V	1570pF @ 13V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FQS4900TF	Fairchild/ON Semiconductor	MOSFET N/P-CH 60V/300V 8SOP FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 60V, 300V Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 650mA, 10V Vgs(th) (Max) @ Id: 1.95V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고172,440	Standard	60V, 300V	1.3A, 300mA	550 mOhm @ 650mA, 10V	1.95V @ 20mA	2.1nC @ 5V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDS89161	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 2.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고58,200	Logic Level Gate	100V	2.7A	105 mOhm @ 2.7A, 10V	4V @ 250µA	4.1nC @ 10V	210pF @ 50V	1.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMS9620S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A/10A PWR56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고661,428	Logic Level Gate	30V	7.5A, 10A	21.5 mOhm @ 7.5A, 10V	3V @ 250µA	14nC @ 10V	665pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDMS7620S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V POWER56 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고840,012	Logic Level Gate	30V	10.1A, 12.4A	20 mOhm @ 10.1A, 10V	3V @ 250µA	11nC @ 10V	608pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDS6990A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고85,080	Logic Level Gate	30V	7.5A	18 mOhm @ 7.5A, 10V	3V @ 250µA	17nC @ 5V	1235pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDD3510H	Fairchild/ON Semiconductor	MOSFET N/P-CH 80V 4.3A/2.8A DPAK FET Type: N and P-Channel, Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD	재고36,264	Logic Level Gate	80V	4.3A, 2.8A	80 mOhm @ 4.3A, 10V	4V @ 250µA	18nC @ 10V	800pF @ 40V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
FDMC8200	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 8A/12A POWER33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 12A Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 700mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고121,020	Logic Level Gate	30V	8A, 12A	20 mOhm @ 6A, 10V	3V @ 250µA	10nC @ 10V	660pF @ 15V	700mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
FDC8602	Fairchild/ON Semiconductor	MOSFET 2N-CH 100V 1.2A 6-SSOT FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Power - Max: 690mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	패키지: SOT-23-6 Thin, TSOT-23-6	재고311,916	Standard	100V	1.2A	350 mOhm @ 1.2A, 10V	4V @ 250µA	2nC @ 10V	70pF @ 50V	690mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDMS3604S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고47,388	Logic Level Gate	30V	13A, 23A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDS6900AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,633,992	Logic Level Gate	30V	6.9A, 8.2A	27 mOhm @ 6.9A, 10V	3V @ 250µA	15nC @ 10V	600pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDZ1323NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 10A 6WLCSP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Supplier Device Package: 6-WLCSP (1.3x2.3)	패키지: 6-XFBGA, WLCSP	재고3,488	Logic Level Gate	20V	10A	13 mOhm @ 1A, 4.5V	1.2V @ 250µA	24nC @ 10V	2055pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFBGA, WLCSP	6-WLCSP (1.3x2.3)
FDS6892A	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 7.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고116,184	Logic Level Gate	20V	7.5A	18 mOhm @ 7.5A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1333pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC6890NZ	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 4A POWER33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Power - Max: 1.92W, 1.78W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-MLP, Power33 Supplier Device Package: MicroFET 3x3mm	패키지: 6-MLP, Power33	재고3,136	Logic Level Gate	20V	4A	68 mOhm @ 4A, 4.5V	2V @ 250µA	3.4nC @ 4.5V	270pF @ 10V	1.92W, 1.78W	-55°C ~ 150°C (TJ)	Surface Mount	6-MLP, Power33	MicroFET 3x3mm
FDMS7608S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 12A/15A 8-PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 15A Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power56	패키지: 8-PowerWDFN	재고3,703,812	Logic Level Gate	30V	12A, 15A	10 mOhm @ 12A, 10V	3V @ 250µA	24nC @ 10V	1510pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power56
FDS9933A	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고522,816	Logic Level Gate	20V	3.8A	75 mOhm @ 3.8A, 4.5V	1.5V @ 250µA	10nC @ 4.5V	600pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS9953A	Fairchild/ON Semiconductor	MOSFET 2P-CH 30V 2.9A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고48,300	Logic Level Gate	30V	2.9A	130 mOhm @ 1A, 10V	3V @ 250µA	3.5nC @ 10V	185pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC7200S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 7A/13A POWER33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 13A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 700mW, 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고103,104	Logic Level Gate	30V	7A, 13A	22 mOhm @ 6A, 10V	3V @ 250µA	10nC @ 10V	660pF @ 15V	700mW, 1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
FDS6930A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 5.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고531,120	Logic Level Gate	30V	5.5A	40 mOhm @ 5.5A, 10V	3V @ 250µA	7nC @ 5V	460pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS6982AS	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고365,952	Logic Level Gate	30V	6.3A, 8.6A	28 mOhm @ 6.3A, 10V	3V @ 250µA	15nC @ 10V	610pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDMC8032L	Fairchild/ON Semiconductor	MOSFET 2N-CH 40V 7A 8-MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Power - Max: 1.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고26,400	Logic Level Gate	40V	7A	20 mOhm @ 7A, 10V	3V @ 250µA	11nC @ 10V	720pF @ 20V	1.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)
SI4532DY	Fairchild/ON Semiconductor	MOSFET N/P-CH 30V 3.9A/3.5A 8-SO FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,058,136	Standard	30V	3.9A, 3.5A	65 mOhm @ 3.9A, 10V	3V @ 250µA	15nC @ 10V	235pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDME1024NZT	Fairchild/ON Semiconductor	MOSFET 2N-CH 20V 3.8A 6-MICROFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-MicroFET (1.6x1.6)	패키지: 6-UFDFN Exposed Pad	재고5,856	Logic Level Gate	20V	3.8A	66 mOhm @ 3.4A, 4.5V	1V @ 250µA	4.2nC @ 4.5V	300pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	6-MicroFET (1.6x1.6)
FDMS3669S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/18A PWR56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 18A Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	패키지: 8-PowerTDFN	재고29,940	Logic Level Gate	30V	13A, 18A	10 mOhm @ 13A, 10V	2.7V @ 250µA	24nC @ 10V	1605pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
FDMC7200	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6A/8A POWER33 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 8A Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Power - Max: 700mW, 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: 8-PowerWDFN	재고431,520	Logic Level Gate	30V	6A, 8A	23.5 mOhm @ 6A, 10V	3V @ 250µA	10nC @ 10V	660pF @ 15V	700mW, 900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-Power33 (3x3)

FDS8949_F085

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,688

Logic Level Gate

40V

6A

29 mOhm @ 6A, 10V

3V @ 250µA

11nC @ 5V

955pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS3660AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/30A 8QFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고5,040

Logic Level Gate

30V

13A, 30A

8 mOhm @ 13A, 10V

2.7V @ 250µA

30nC @ 10V

2230pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMC7208S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/16A PWR33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고6,656

Logic Level Gate

30V

12A, 16A

9 mOhm @ 12A, 10V

3V @ 250µA

18nC @ 10V

1130pF @ 15V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

FDMS3610S

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 17.5A/30A 8-MLP

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 17.5A, 30A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 13V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고7,376

Logic Level Gate

25V

17.5A, 30A

5 mOhm @ 17.5A, 10V

2V @ 250µA

26nC @ 10V

1570pF @ 13V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FQS4900TF

Fairchild/ON Semiconductor

MOSFET N/P-CH 60V/300V 8SOP

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V, 300V
Current - Continuous Drain (Id) @ 25°C: 1.3A, 300mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id: 1.95V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고172,440

Standard

60V, 300V

1.3A, 300mA

550 mOhm @ 650mA, 10V

1.95V @ 20mA

2.1nC @ 5V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDS89161

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 2.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고58,200

Logic Level Gate

100V

2.7A

105 mOhm @ 2.7A, 10V

4V @ 250µA

4.1nC @ 10V

210pF @ 50V

1.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMS9620S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A/10A PWR56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 10A
Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고661,428

Logic Level Gate

30V

7.5A, 10A

21.5 mOhm @ 7.5A, 10V

3V @ 250µA

14nC @ 10V

665pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDMS7620S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V POWER56

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고840,012

Logic Level Gate

30V

10.1A, 12.4A

20 mOhm @ 10.1A, 10V

3V @ 250µA

11nC @ 10V

608pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDS6990A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1235pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고85,080

Logic Level Gate

30V

7.5A

18 mOhm @ 7.5A, 10V

3V @ 250µA

17nC @ 5V

1235pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDD3510H

Fairchild/ON Semiconductor

MOSFET N/P-CH 80V 4.3A/2.8A DPAK

FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

패키지: TO-252-5, DPak (4 Leads + Tab), TO-252AD

재고36,264

Logic Level Gate

80V

4.3A, 2.8A

80 mOhm @ 4.3A, 10V

4V @ 250µA

18nC @ 10V

800pF @ 40V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

FDMC8200

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 8A/12A POWER33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 12A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 700mW, 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고121,020

Logic Level Gate

30V

8A, 12A

20 mOhm @ 6A, 10V

3V @ 250µA

10nC @ 10V

660pF @ 15V

700mW, 900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

FDC8602

Fairchild/ON Semiconductor

MOSFET 2N-CH 100V 1.2A 6-SSOT

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Rds On (Max) @ Id, Vgs: 350 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Power - Max: 690mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

패키지: SOT-23-6 Thin, TSOT-23-6

재고311,916

Standard

100V

1.2A

350 mOhm @ 1.2A, 10V

4V @ 250µA

2nC @ 10V

70pF @ 50V

690mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDMS3604S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고47,388

Logic Level Gate

30V

13A, 23A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1785pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDS6900AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A, 8.2A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,633,992

Logic Level Gate

30V

6.9A, 8.2A

27 mOhm @ 6.9A, 10V

3V @ 250µA

15nC @ 10V

600pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDZ1323NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 10A 6WLCSP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Supplier Device Package: 6-WLCSP (1.3x2.3)

패키지: 6-XFBGA, WLCSP

재고3,488

Logic Level Gate

20V

10A

13 mOhm @ 1A, 4.5V

1.2V @ 250µA

24nC @ 10V

2055pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFBGA, WLCSP

6-WLCSP (1.3x2.3)

FDS6892A

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1333pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고116,184

Logic Level Gate

20V

7.5A

18 mOhm @ 7.5A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1333pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC6890NZ

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 4A POWER33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
Power - Max: 1.92W, 1.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MLP, Power33
Supplier Device Package: MicroFET 3x3mm

패키지: 6-MLP, Power33

재고3,136

Logic Level Gate

20V

4A

68 mOhm @ 4A, 4.5V

2V @ 250µA

3.4nC @ 4.5V

270pF @ 10V

1.92W, 1.78W

-55°C ~ 150°C (TJ)

Surface Mount

6-MLP, Power33

MicroFET 3x3mm

FDMS7608S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 12A/15A 8-PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power56

패키지: 8-PowerWDFN

재고3,703,812

Logic Level Gate

30V

12A, 15A

10 mOhm @ 12A, 10V

3V @ 250µA

24nC @ 10V

1510pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power56

FDS9933A

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고522,816

Logic Level Gate

20V

3.8A

75 mOhm @ 3.8A, 4.5V

1.5V @ 250µA

10nC @ 4.5V

600pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS9953A

Fairchild/ON Semiconductor

MOSFET 2P-CH 30V 2.9A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고48,300

Logic Level Gate

30V

2.9A

130 mOhm @ 1A, 10V

3V @ 250µA

3.5nC @ 10V

185pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC7200S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 7A/13A POWER33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 700mW, 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고103,104

Logic Level Gate

30V

7A, 13A

22 mOhm @ 6A, 10V

3V @ 250µA

10nC @ 10V

660pF @ 15V

700mW, 1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

FDS6930A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 5.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고531,120

Logic Level Gate

30V

5.5A

40 mOhm @ 5.5A, 10V

3V @ 250µA

7nC @ 5V

460pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS6982AS

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고365,952

Logic Level Gate

30V

6.3A, 8.6A

28 mOhm @ 6.3A, 10V

3V @ 250µA

15nC @ 10V

610pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDMC8032L

Fairchild/ON Semiconductor

MOSFET 2N-CH 40V 7A 8-MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고26,400

Logic Level Gate

40V

7A

20 mOhm @ 7A, 10V

3V @ 250µA

11nC @ 10V

720pF @ 20V

1.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)

SI4532DY

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 3.9A/3.5A 8-SO

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,058,136

Standard

30V

3.9A, 3.5A

65 mOhm @ 3.9A, 10V

3V @ 250µA

15nC @ 10V

235pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDME1024NZT

Fairchild/ON Semiconductor

MOSFET 2N-CH 20V 3.8A 6-MICROFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-MicroFET (1.6x1.6)

패키지: 6-UFDFN Exposed Pad

재고5,856

Logic Level Gate

20V

3.8A

66 mOhm @ 3.4A, 4.5V

1V @ 250µA

4.2nC @ 4.5V

300pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

6-MicroFET (1.6x1.6)

FDMS3669S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/18A PWR56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

패키지: 8-PowerTDFN

재고29,940

Logic Level Gate

30V

13A, 18A

10 mOhm @ 13A, 10V

2.7V @ 250µA

24nC @ 10V

1605pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

FDMC7200

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A/8A POWER33

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8A
Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 700mW, 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: 8-PowerWDFN

재고431,520

Logic Level Gate

30V

6A, 8A

23.5 mOhm @ 6A, 10V

3V @ 250µA

10nC @ 10V

660pF @ 15V

700mW, 900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-Power33 (3x3)