페이지 13 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559-836
Language Translation

* Please refer to the English Version as our Official Version.

Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 3,066
페이지  13/110
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot FDME820NZT
Fairchild/ON Semiconductor

MOSFET N-CH 20V 9A MICROFET 1.6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MicroFet 1.6x1.6 Thin
  • Package / Case: 6-PowerUFDFN
패키지: 6-PowerUFDFN
재고719,040
MOSFET (Metal Oxide)
20V
9A (Ta)
1.8V, 4.5V
1V @ 250µA
8.5nC @ 4.5V
865pF @ 10V
±12V
-
2.1W (Ta)
18 mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
MicroFet 1.6x1.6 Thin
6-PowerUFDFN
hot FDFMA3N109
Fairchild/ON Semiconductor

MOSFET N-CH 30V 2.9A MICRO2X2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-VDFN Exposed Pad
패키지: 6-VDFN Exposed Pad
재고24,624
MOSFET (Metal Oxide)
30V
2.9A (Tc)
2.5V, 4.5V
1.5V @ 250µA
3nC @ 4.5V
220pF @ 15V
±12V
Schottky Diode (Isolated)
1.5W (Ta)
123 mOhm @ 2.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-VDFN Exposed Pad
hot FDG330P
Fairchild/ON Semiconductor

MOSFET P-CH 12V 2A SC70-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 477pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-70-6
  • Package / Case: 6-TSSOP, SC-88, SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고378,408
MOSFET (Metal Oxide)
12V
2A (Ta)
1.8V, 4.5V
1.5V @ 250µA
7nC @ 4.5V
477pF @ 6V
±8V
-
750mW (Ta)
110 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-70-6
6-TSSOP, SC-88, SOT-363
hot FDMA7670
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6-MLP 2X2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-VDFN Exposed Pad
패키지: 6-VDFN Exposed Pad
재고461,520
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
3V @ 250µA
22nC @ 10V
1360pF @ 15V
±20V
-
2.4W (Ta)
15 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-VDFN Exposed Pad
hot FDFS2P753Z
Fairchild/ON Semiconductor

MOSFET P-CH 30V 3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
  • Vgs (Max): ±25V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고1,439,976
MOSFET (Metal Oxide)
30V
3A (Ta)
4.5V, 10V
3V @ 250µA
9.3nC @ 10V
455pF @ 10V
±25V
Schottky Diode (Isolated)
1.6W (Ta)
115 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
hot FDMC8015L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 7A 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 24W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
패키지: 8-PowerWDFN
재고75,984
MOSFET (Metal Oxide)
40V
7A (Ta), 18A (Tc)
4.5V, 10V
3V @ 250µA
19nC @ 10V
945pF @ 20V
±20V
-
2.3W (Ta), 24W (Tc)
26 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
hot FDC6392S
Fairchild/ON Semiconductor

MOSFET P-CH 20V 2.2A SSOT-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 960mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고2,418,708
MOSFET (Metal Oxide)
20V
2.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
5.2nC @ 4.5V
369pF @ 10V
±12V
Schottky Diode (Isolated)
960mW (Ta)
150 mOhm @ 2.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
hot FDMA291P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 6.6A MFET 2X2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-MicroFET (2x2)
  • Package / Case: 6-VDFN Exposed Pad
패키지: 6-VDFN Exposed Pad
재고1,559,460
MOSFET (Metal Oxide)
20V
6.6A (Ta)
1.8V, 4.5V
1V @ 250µA
14nC @ 4.5V
1000pF @ 10V
±8V
-
2.4W (Ta)
42 mOhm @ 6.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-MicroFET (2x2)
6-VDFN Exposed Pad
hot FDC8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 6.5A 6-SSOT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-SSOT
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고52,224
MOSFET (Metal Oxide)
30V
6.5A (Ta), 8A (Tc)
4.5V, 10V
3V @ 250µA
7.4nC @ 10V
465pF @ 15V
±20V
-
1.6W (Ta)
23 mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-SSOT
SOT-23-6 Thin, TSOT-23-6
hot FDN308P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 1.5A SSOT-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 341pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고291,372
MOSFET (Metal Oxide)
20V
1.5A (Ta)
2.5V, 4.5V
1.5V @ 250µA
5.4nC @ 4.5V
341pF @ 10V
±12V
-
500mW (Ta)
125 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
hot FDMS7692
Fairchild/ON Semiconductor

MOSFET N-CH 30V 14A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6), Power56
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고966,528
MOSFET (Metal Oxide)
30V
14A (Ta), 28A (Tc)
4.5V, 10V
3V @ 250µA
22nC @ 10V
1350pF @ 15V
±20V
-
2.5W (Ta), 27W (Tc)
7.5 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6), Power56
8-PowerTDFN
hot FDC640P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.5A SSOT-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: SOT-23-6 Thin, TSOT-23-6
재고1,864,080
MOSFET (Metal Oxide)
20V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 250µA
13nC @ 4.5V
890pF @ 10V
±12V
-
1.6W (Ta)
53 mOhm @ 4.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
hot 2N7000_D75Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 200MA TO-92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,488
MOSFET (Metal Oxide)
60V
200mA (Ta)
4.5V, 10V
3V @ 1mA
-
50pF @ 25V
±20V
-
400mW (Ta)
5 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
FCH023N65S3_F155
Fairchild/ON Semiconductor

MOSFET N-CH 650V 75A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 222nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7160pF @ 400V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 37.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 Long Leads
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,256
MOSFET (Metal Oxide)
650V
75A (Tc)
10V
4.5V @ 7.5mA
222nC @ 10V
7160pF @ 400V
±30V
Super Junction
595W (Tc)
23 mOhm @ 37.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247 Long Leads
TO-247-3
hot FCH041N60E
Fairchild/ON Semiconductor

MOSFET N CH 600V 77A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 592W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 39A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고105,624
MOSFET (Metal Oxide)
600V
77A (Tc)
10V
3.5V @ 250µA
380nC @ 10V
13700pF @ 100V
±20V
-
592W (Tc)
41 mOhm @ 39A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3
hot FCH47N60F_F133
Fairchild/ON Semiconductor

MOSFET N-CH 600V 47A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 23.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,160
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
5V @ 250µA
270nC @ 10V
8000pF @ 25V
±30V
-
417W (Tc)
70 mOhm @ 23.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot FDP8030L
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 187W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고448,212
MOSFET (Metal Oxide)
30V
80A (Ta)
4.5V, 10V
2V @ 250µA
170nC @ 5V
10500pF @ 15V
±20V
-
187W (Tc)
3.5 mOhm @ 80A, 10V
-65°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDA50N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 48A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고436,272
MOSFET (Metal Oxide)
500V
48A (Tc)
10V
5V @ 250µA
137nC @ 10V
6460pF @ 25V
±20V
-
625W (Tc)
105 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
FDP020N06B_F102
Fairchild/ON Semiconductor

MOSFET N-CH 60V 120A TO-220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20930pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고13,644
MOSFET (Metal Oxide)
60V
120A (Tc)
10V
4.5V @ 250µA
268nC @ 10V
20930pF @ 30V
±20V
-
333W (Tc)
2 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDPF2710T
Fairchild/ON Semiconductor

MOSFET N-CH 250V 25A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고60,396
MOSFET (Metal Oxide)
250V
25A (Tc)
10V
5V @ 250µA
101nC @ 10V
7280pF @ 25V
±30V
-
62.5W (Tc)
42.5 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FDPF20N50FT
Fairchild/ON Semiconductor

MOSFET N-CH 500V 20A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3390pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 38.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고10,332
MOSFET (Metal Oxide)
500V
20A (Tc)
10V
5V @ 250µA
65nC @ 10V
3390pF @ 25V
±30V
-
38.5W (Tc)
260 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
hot FDP083N15A_F102
Fairchild/ON Semiconductor

MOSFET N-CH 150V 83A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 294W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고6,048
MOSFET (Metal Oxide)
150V
83A (Tc)
10V
4V @ 250µA
84nC @ 10V
6040pF @ 25V
±20V
-
294W (Tc)
8.3 mOhm @ 75A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
FDB2710
Fairchild/ON Semiconductor

MOSFET N-CH 250V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tc)
  • Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고18,132
MOSFET (Metal Oxide)
250V
50A (Tc)
10V
5V @ 250µA
101nC @ 10V
7280pF @ 25V
±30V
-
260W (Tc)
42.5 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCB20N60FTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고13,794
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 250µA
98nC @ 10V
3080pF @ 25V
±30V
-
208W (Tc)
190 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDP038AN06A0
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고108,552
MOSFET (Metal Oxide)
60V
17A (Ta), 80A (Tc)
6V, 10V
4V @ 250µA
124nC @ 10V
6400pF @ 25V
±20V
-
310W (Tc)
3.8 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDP2532
Fairchild/ON Semiconductor

MOSFET N-CH 150V 79A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5870pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고168,372
MOSFET (Metal Oxide)
150V
8A (Ta), 79A (Tc)
6V, 10V
4V @ 250µA
107nC @ 10V
5870pF @ 25V
±20V
-
310W (Tc)
16 mOhm @ 33A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FDA59N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 59A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 56 mOhm @ 29.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
패키지: TO-3P-3, SC-65-3
재고595,932
MOSFET (Metal Oxide)
300V
59A (Tc)
10V
5V @ 250µA
100nC @ 10V
4670pF @ 25V
±30V
-
500W (Tc)
56 mOhm @ 29.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot FQH8N100C
Fairchild/ON Semiconductor

MOSFET N-CH 1000V 8A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: TO-247-3
재고111,564
MOSFET (Metal Oxide)
1000V
8A (Tc)
10V
5V @ 250µA
70nC @ 10V
3220pF @ 25V
±30V
-
225W (Tc)
1.45 Ohm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247
TO-247-3