Fairchild/ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

FQU10N20CTU

Fairchild/ON Semiconductor

MOSFET N-CH 200V 7.8A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 3.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

FDD86581_F085

Fairchild/ON Semiconductor

MV7 60/20V 1000A N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48.4W (Tj)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

FDMA410NZT

Fairchild/ON Semiconductor

SINGLE PT4 NCH 20/8V ZENER IN ML

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 9.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: -
• Package / Case: 8-UDFN Exposed Pad

패키지: 8-UDFN Exposed Pad

SSR1N60BTM_WS

Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLM120ATF

Fairchild/ON Semiconductor

MOSFET N-CH 100V 2.3A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.15A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223-4
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

SSU1N60BTU_WS

Fairchild/ON Semiconductor

MOSFET N-CH 600V 0.9A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

FDZ193P

Fairchild/ON Semiconductor

MOSFET P-CH 20V 3A 8-WLCSP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 90 mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WLCSP
• Package / Case: 6-UFBGA, WLCSP

패키지: 6-UFBGA, WLCSP

FDV045P20L

Fairchild/ON Semiconductor

PT8P 20V/8V SINGLE SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

FDC30N20DZ

Fairchild/ON Semiconductor

PT8 30/20 WITH ZENER IN SSOT6 DU

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

FDMA008P20LZ

Fairchild/ON Semiconductor

PT8PZ 20/8V VIS WITH 2.05X2.05 P

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-PQFN (2x2)
• Package / Case: 6-PowerWDFN

패키지: 6-PowerWDFN

FDN028N20

Fairchild/ON Semiconductor

PT8 20/12V NCH POWERTRENCH MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BSS138_F085

Fairchild/ON Semiconductor

MOSFET N-CH SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

FCPF165N65S3L1

Fairchild/ON Semiconductor

MOSFET N-CH 650V 19A TO220F-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 400V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 9.5A, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F-3
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

FDMS86180

Fairchild/ON Semiconductor

MOSFET N-CH 100V 151A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 151A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 370µA
• Gate Charge (Qg) (Max) @ Vgs: 54nC @ 6V
• Input Capacitance (Ciss) (Max) @ Vds: 6215pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 138W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 67A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

FDMC86012

Fairchild/ON Semiconductor

MOSFET N-CH 30V 23A 8MLP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5075pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 23A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Power33
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

FDMS1D4N03S

Fairchild/ON Semiconductor

MOSFET N-CH 30V 211A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 211A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 10250pF @ 15V
• Vgs (Max): ±16V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 1.09 mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

FDMS1D5N03

Fairchild/ON Semiconductor

MOSFET N-CH 30V 218A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 218A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 9690pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 1.15 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

FDMS86183

Fairchild/ON Semiconductor

MOSFET N-CH 100V 51A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 6V
• Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PQFN (5x6), Power56
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

FDN5632N_F085

Fairchild/ON Semiconductor

MOSFET N-CH 60V 1.7A SSOT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 82 mOhm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SuperSOT-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

FCA16N60N

Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 134.4W (Tc)
• Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

FDP8N50NZ

Fairchild/ON Semiconductor

MOSFET N-CH 500V TO-220AB-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

FCP22N60N

Fairchild/ON Semiconductor

MOSFET N-CH 600V 22A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 100V
• Vgs (Max): ±45V
• FET Feature: -
• Power Dissipation (Max): 205W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

FDA33N25

Fairchild/ON Semiconductor

MOSFET N-CH 250V 33A TO-3PN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 245W (Tc)
• Rds On (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PN
• Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

FQA9N90C_F109

Fairchild/ON Semiconductor

MOSFET N-CH 900V 9A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3PN
• Package / Case: TO-3P-3, SC-65-3

패키지: TO-3P-3, SC-65-3

FQPF20N06

Fairchild/ON Semiconductor

MOSFET N-CH 60V 15A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

FQU2N60CTU

Fairchild/ON Semiconductor

MOSFET N-CH 600V 1.9A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

FDD6530A

Fairchild/ON Semiconductor

MOSFET N-CH 20V 21A D-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta), 33W (Tc)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 8A, 4.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

FDMC7692

Fairchild/ON Semiconductor

MOSFET N-CH 30V 8-MLP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.3W (Ta), 29W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 13.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-MLP (3.3x3.3)
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN