페이지 4 - Fairchild/ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Fairchild/ON Semiconductor 제품 - 트랜지스터 - IGBT - 단일

기록 343
페이지  4/13
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FGB3440G2_F085
Fairchild/ON Semiconductor

ECOSPARK 2 IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 26.9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 1µs/5.3µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,688
400V
26.9A
-
1.2V @ 4V, 6A
166W
-
Logic
24nC
1µs/5.3µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot SGF23N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 23A 75W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 75W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: SC-94
  • Supplier Device Package: TO-3PF
패키지: SC-94
재고44,160
600V
23A
92A
2.6V @ 15V, 12A
75W
115µJ (on), 135µJ (off)
Standard
-
17ns/60ns
300V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
SC-94
TO-3PF
FGB3236_F085
Fairchild/ON Semiconductor

IGBT 360V 44A 187W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 44A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
  • Power - Max: 187W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 20nC
  • Td (on/off) @ 25°C: -/5.4µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,608
360V
44A
-
1.4V @ 4V, 6A
187W
-
Logic
20nC
-/5.4µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
FGI3236_F085
Fairchild/ON Semiconductor

IGBT 360V 44A 187W I2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360V
  • Current - Collector (Ic) (Max): 44A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.4V @ 4V, 6A
  • Power - Max: 187W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 20nC
  • Td (on/off) @ 25°C: -/5.4µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고7,428
360V
44A
-
1.4V @ 4V, 6A
187W
-
Logic
20nC
-/5.4µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
FGPF4565
Fairchild/ON Semiconductor

IGBT 650V 30W TO-220F

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 170A
  • Vce(on) (Max) @ Vge, Ic: 1.88V @ 15V, 30A
  • Power - Max: 30W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40.3nC
  • Td (on/off) @ 25°C: 11.2ns/40.8ns
  • Test Condition: 400V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고8,376
650V
-
170A
1.88V @ 15V, 30A
30W
-
Standard
40.3nC
11.2ns/40.8ns
400V, 30A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
FGB7N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 14A 83W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 7A
  • Power - Max: 83W
  • Switching Energy: 99µJ (on), 104µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 5.9ns/32.3ns
  • Test Condition: 400V, 7A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 32.3ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고17,664
600V
14A
21A
2.3V @ 15V, 7A
83W
99µJ (on), 104µJ (off)
Standard
18nC
5.9ns/32.3ns
400V, 7A, 10 Ohm, 15V
32.3ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
FGP3440G2_F085
Fairchild/ON Semiconductor

ECOSPARK 2 IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 26.9A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 166W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 24nC
  • Td (on/off) @ 25°C: 1µs/5.3µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,500
400V
26.9A
-
1.2V @ 4V, 6A
166W
-
Logic
24nC
1µs/5.3µs
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot HGTP3N60A4
Fairchild/ON Semiconductor

IGBT 600V 17A 70W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
  • Power - Max: 70W
  • Switching Energy: 37µJ (on), 25µJ (off)
  • Input Type: Standard
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 6ns/73ns
  • Test Condition: 390V, 3A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고77,940
600V
17A
40A
2.7V @ 15V, 3A
70W
37µJ (on), 25µJ (off)
Standard
21nC
6ns/73ns
390V, 3A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
FGP3040G2_F085
Fairchild/ON Semiconductor

ECOSPARK 2 IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고5,072
400V
41A
-
1.25V @ 4V, 6A
150W
-
Logic
21nC
900ns/4.8µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
FGI3040G2_F085
Fairchild/ON Semiconductor

ECOSPARK 2-400V IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21nC
  • Td (on/off) @ 25°C: 900ns/4.8µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고8,064
400V
41A
-
1.25V @ 4V, 6A
150W
-
Logic
21nC
900ns/4.8µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262AA
hot ISL9V2540S3ST
Fairchild/ON Semiconductor

IGBT 430V 15.5A 166.7W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 15.5A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
  • Power - Max: 166.7W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 15.1nC
  • Td (on/off) @ 25°C: -/3.64µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,072
430V
15.5A
-
1.8V @ 4V, 6A
166.7W
-
Logic
15.1nC
-/3.64µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
FGB5N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 10A 73.5W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 5A
  • Power - Max: 73.5W
  • Switching Energy: 80µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 12.1nC
  • Td (on/off) @ 25°C: 5.4ns/25.4ns
  • Test Condition: 400V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D2PAK)
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고18,828
600V
10A
15A
2.4V @ 15V, 5A
73.5W
80µJ (on), 70µJ (off)
Standard
12.1nC
5.4ns/25.4ns
400V, 5A, 10 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB (D2PAK)
hot HGTG30N60C3D
Fairchild/ON Semiconductor

IGBT 600V 63A 208W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 252A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 208W
  • Switching Energy: 1.05mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 162nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고253,560
600V
63A
252A
1.8V @ 15V, 30A
208W
1.05mJ (on), 2.5mJ (off)
Standard
162nC
-
-
60ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGH75T65SHD_F155
Fairchild/ON Semiconductor

IGBT 650V 150A 455W TO-247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 2.4mJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 123nC
  • Td (on/off) @ 25°C: 28ns/80ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 43.4ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고5,536
650V
150A
225A
2.1V @ 15V, 75A
455W
2.4mJ (on), 720µJ (off)
Standard
123nC
28ns/80ns
400V, 75A, 3 Ohm, 15V
43.4ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
HGTG30N60B3D
Fairchild/ON Semiconductor

IGBT 600V 60A 208W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 208W
  • Switching Energy: 550µJ (on), 680µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 36ns/137ns
  • Test Condition: 480V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,544
600V
60A
220A
1.9V @ 15V, 30A
208W
550µJ (on), 680µJ (off)
Standard
170nC
36ns/137ns
480V, 30A, 3 Ohm, 15V
55ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot HGTG5N120BND
Fairchild/ON Semiconductor

IGBT 1200V 21A 167W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
  • Power - Max: 167W
  • Switching Energy: 450µJ (on), 390µJ (off)
  • Input Type: Standard
  • Gate Charge: 53nC
  • Td (on/off) @ 25°C: 22ns/160ns
  • Test Condition: 960V, 5A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고436,680
1200V
21A
40A
2.7V @ 15V, 5A
167W
450µJ (on), 390µJ (off)
Standard
53nC
22ns/160ns
960V, 5A, 25 Ohm, 15V
65ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
hot FGAF40N60SMD
Fairchild/ON Semiconductor

IGBT 600V 80A 79W TO-3PF

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
  • Power - Max: 115W
  • Switching Energy: 870µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 119nC
  • Td (on/off) @ 25°C: 12ns/92ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 36ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
패키지: TO-3P-3 Full Pack
재고4,576
600V
80A
120A
1.9V @ 15V, 40A
115W
870µJ (on), 260µJ (off)
Standard
119nC
12ns/92ns
400V, 40A, 6 Ohm, 15V
36ns
-55°C ~ 175°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
FGH30T65UPDT_F155
Fairchild/ON Semiconductor

IGBT 650V 60A 250W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 760µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/139ns
  • Test Condition: 400V, 30A, 8 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
패키지: TO-247-3
재고6,060
650V
60A
90A
2.3V @ 15V, 30A
250W
760µJ (on), 400µJ (off)
Standard
155nC
22ns/139ns
400V, 30A, 8 Ohm, 15V
43ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot FGPF10N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 20A 42W TO-220F

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
  • Power - Max: 42W
  • Switching Energy: 150µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 8ns/52.2ns
  • Test Condition: 400V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37.7ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F-3
패키지: TO-220-3 Full Pack
재고103,704
600V
20A
30A
2.45V @ 15V, 10A
42W
150µJ (on), 50µJ (off)
Standard
37nC
8ns/52.2ns
400V, 10A, 10 Ohm, 15V
37.7ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F-3
hot FGH75N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 150A 452W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
  • Power - Max: 452W
  • Switching Energy: 3.05mJ (on), 1.35mJ (off)
  • Input Type: Standard
  • Gate Charge: 250nC
  • Td (on/off) @ 25°C: 27ns/128ns
  • Test Condition: 400V, 75A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고66,480
600V
150A
225A
2.4V @ 15V, 75A
452W
3.05mJ (on), 1.35mJ (off)
Standard
250nC
27ns/128ns
400V, 75A, 3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
FGH40T120SMD_F155
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.7mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 40ns/475ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
패키지: TO-247-3
재고6,688
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.7mJ (on), 1.1mJ (off)
Standard
370nC
40ns/475ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
FGP20N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO220

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 380µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 13ns/87ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고12,348
600V
40A
60A
2.4V @ 15V, 20A
165W
380µJ (on), 260µJ (off)
Standard
63nC
13ns/87ns
400V, 20A, 10 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot SGP23N60UFTU
Fairchild/ON Semiconductor

IGBT 600V 23A 100W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 115µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 17ns/60ns
  • Test Condition: 300V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고73,080
600V
23A
92A
2.6V @ 15V, 12A
100W
115µJ (on), 135µJ (off)
Standard
-
17ns/60ns
300V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FGP10N60UNDF
Fairchild/ON Semiconductor

IGBT 600V 20A 139W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
  • Power - Max: 139W
  • Switching Energy: 150µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 8ns/52.2ns
  • Test Condition: 400V, 10A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 37.7ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
패키지: TO-220-3
재고9,036
600V
20A
30A
2.45V @ 15V, 10A
139W
150µJ (on), 50µJ (off)
Standard
37nC
8ns/52.2ns
400V, 10A, 10 Ohm, 15V
37.7ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot FGA25N120ANTDTU_F109
Fairchild/ON Semiconductor

IGBT 1200V 50A 312W TO3P

  • IGBT Type: NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
  • Power - Max: 312W
  • Switching Energy: 4.1mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 50ns/190ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
패키지: TO-3P-3, SC-65-3
재고6,480
1200V
50A
90A
2.65V @ 15V, 50A
312W
4.1mJ (on), 960µJ (off)
Standard
200nC
50ns/190ns
600V, 25A, 10 Ohm, 15V
350ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot SGS10N60RUFDTU
Fairchild/ON Semiconductor

IGBT 600V 16A 55W TO220F

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
  • Power - Max: 55W
  • Switching Energy: 141µJ (on), 215µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 15ns/36ns
  • Test Condition: 300V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220F
패키지: TO-220-3 Full Pack
재고14,724
600V
16A
30A
2.8V @ 15V, 10A
55W
141µJ (on), 215µJ (off)
Standard
30nC
15ns/36ns
300V, 10A, 20 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220F
hot FGH60N60SMD
Fairchild/ON Semiconductor

IGBT 600V 120A 600W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 600W
  • Switching Energy: 1.26mJ (on), 450µJ (off)
  • Input Type: Standard
  • Gate Charge: 189nC
  • Td (on/off) @ 25°C: 18ns/104ns
  • Test Condition: 400V, 60A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 39ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고348,480
600V
120A
180A
2.5V @ 15V, 60A
600W
1.26mJ (on), 450µJ (off)
Standard
189nC
18ns/104ns
400V, 60A, 3 Ohm, 15V
39ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FGH40T120SMDL4
Fairchild/ON Semiconductor

IGBT 1200V 80A 555W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 555W
  • Switching Energy: 2.24mJ (on), 1.02mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 44ns/464ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 65ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4L
패키지: TO-247-4
재고7,308
1200V
80A
160A
2.4V @ 15V, 40A
555W
2.24mJ (on), 1.02mJ (off)
Standard
370nC
44ns/464ns
600V, 40A, 10 Ohm, 15V
65ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4L