페이지 4 - Global Power Technologies Group 제품

부품 번호	제조업체	설명	패키지	재고
GPA040A120L-FD	Global Power Technologies Group	IGBT 1200V 80A 480W TO264 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A Power - Max: 480W Switching Energy: 5.3mJ (on), 1.1mJ (off) Input Type: Standard Gate Charge: 480nC Td (on/off) @ 25°C: 55ns/200ns Test Condition: 600V, 40A, 5 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: TO-264	패키지: TO-264-3, TO-264AA	재고25,218
GSID150A120S3B1	Global Power Technologies Group	SILICON IGBT MODULES IGBT Type: - Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 300A Power - Max: 940W Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 14nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: D-3 Module Supplier Device Package: D3	패키지: D-3 Module	재고2,928
GSID200A120S5C1	Global Power Technologies Group	IGBT MODULE 1200V 335A IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 335A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 22.4nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고5,456
GHIS060A120S-A1	Global Power Technologies Group	IGBT BOOST CHP 1200V 120A SOT227 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 120A Power - Max: 680W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 8nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,800
GHIS080A060S-A1	Global Power Technologies Group	IGBT BOOST CHOP 600V 160A SOT227 IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 160A Power - Max: 380W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A Current - Collector Cutoff (Max): 2mA Input Capacitance (Cies) @ Vce: 5.44nF @ 30V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,152
GP2M020A050H	Global Power Technologies Group	MOSFET N-CH 500V 18A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: TO-220-3	재고7,648
GP1M005A050HS	Global Power Technologies Group	MOSFET N-CH 500V 4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 92.5W (Tc) Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: TO-220-3	재고6,144
GP2M004A065CG	Global Power Technologies Group	MOSFET N-CH 650V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 98.4W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,664
GP1M018A020FG	Global Power Technologies Group	MOSFET N-CH 200V 18A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30.4W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	패키지: TO-220-3 Full Pack	재고4,160
GP1M018A020CG	Global Power Technologies Group	MOSFET N-CH 200V 18A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,248
GCMS007A120S7B1	Global Power Technologies Group	SIC MOSFET/SBD HALF BRIDGE MODUL Type: MOSFET Configuration: Half Bridge Current: 360A Voltage: 1200V Voltage - Isolation: 2500Vrms Package / Case: Power Module	패키지: Power Module	재고4,960
GDP30S120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 30A TO247-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 1790pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 135°C	패키지: TO-247-2	재고3,840
GDP12S060A	Global Power Technologies Group	DIODE SCHOTTKY 600V 12A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 487pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 135°C	패키지: TO-220-2	재고2,992
GDP06S060D	Global Power Technologies Group	DIODE SCHOTTKY 600V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 243pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 135°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,968
GP2D020A170B	Global Power Technologies Group	DIODE SCHOTTKY 1.7KV 20A TO247-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 1700V Capacitance @ Vr, F: 1624pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고7,512
GP2D030A060B	Global Power Technologies Group	DIODE SCHOTTKY 600V 30A TO247-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.65V @ 30A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 1581pF @ 1V, 1MHZ Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고6,168
GP2D005A170B	Global Power Technologies Group	DIODE SCHOTTKY 1700V 5A TO247-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 1700V Capacitance @ Vr, F: 406pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-247-2	재고10,824
GDP60D120B	Global Power Technologies Group	DIODE SCHOTTKY 1200V 30A TO247-3 Diode Configuration: 1 Pair Common Anode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1200V Operating Temperature - Junction: -55°C ~ 135°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고4,064
GDP24D060B	Global Power Technologies Group	DIODE SCHOTTKY 600V 12A TO247-3 Diode Configuration: 1 Pair Common Anode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 12A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 600V Operating Temperature - Junction: -55°C ~ 135°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고7,600
GHXS050A060S-D4	Global Power Technologies Group	DIODE SCHOTT SBD 600V 50A SOT227 Diode Configuration: 2 Independent Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 50A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,368
GSXF060A120S1-D3	Global Power Technologies Group	DIODE FAST REC 1200V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 2.35V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,720
GSXF100A100S1-D3	Global Power Technologies Group	DIODE FAST REC 1000V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 2.35V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125ns Current - Reverse Leakage @ Vr: 25µA @ 1000V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,088
GSXD100A006S1-D3	Global Power Technologies Group	DIODE SCHOTTKY 60V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고7,776
GSXF120A020S1-D3	Global Power Technologies Group	DIODE FAST REC 200V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 1V @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,920
GSXD060A015S1-D3	Global Power Technologies Group	DIODE SCHOTTKY 150V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 150V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,680
GSXD050A012S1-D3	Global Power Technologies Group	DIODE SCHOTTKY 120V 50A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io) (per Diode): 50A Voltage - Forward (Vf) (Max) @ If: 880mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 120V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,520
GHXS060A120S-D3	Global Power Technologies Group	MOD SBD BRIDGE 1200V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,888
GHXS020A060S-D1	Global Power Technologies Group	MOD SBD BRIDGE 600V 20A SOT227 Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Current - Reverse Leakage @ Vr: 200µA @ 600V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고2,100

GPA040A120L-FD

Global Power Technologies Group

IGBT 1200V 80A 480W TO264

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Power - Max: 480W
Switching Energy: 5.3mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 480nC
Td (on/off) @ 25°C: 55ns/200ns
Test Condition: 600V, 40A, 5 Ohm, 15V
Reverse Recovery Time (trr): 200ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264

패키지: TO-264-3, TO-264AA

재고25,218

GSID150A120S3B1

Global Power Technologies Group

SILICON IGBT MODULES

IGBT Type: -
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 940W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 14nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: D-3 Module
Supplier Device Package: D3

패키지: D-3 Module

재고2,928

GSID200A120S5C1

Global Power Technologies Group

IGBT MODULE 1200V 335A

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 335A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 22.4nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고5,456

GHIS060A120S-A1

Global Power Technologies Group

IGBT BOOST CHP 1200V 120A SOT227

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 120A
Power - Max: 680W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 8nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,800

GHIS080A060S-A1

Global Power Technologies Group

IGBT BOOST CHOP 600V 160A SOT227

IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 160A
Power - Max: 380W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 5.44nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,152

GP2M020A050H

Global Power Technologies Group

MOSFET N-CH 500V 18A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

패키지: TO-220-3

재고7,648

GP1M005A050HS

Global Power Technologies Group

MOSFET N-CH 500V 4A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 602pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 92.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.85 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

패키지: TO-220-3

재고6,144

GP2M004A065CG

Global Power Technologies Group

MOSFET N-CH 650V 4A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 98.4W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,664

GP1M018A020FG

Global Power Technologies Group

MOSFET N-CH 200V 18A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30.4W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

재고4,160

GP1M018A020CG

Global Power Technologies Group

MOSFET N-CH 200V 18A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,248

GCMS007A120S7B1

Global Power Technologies Group

SIC MOSFET/SBD HALF BRIDGE MODUL

Type: MOSFET
Configuration: Half Bridge
Current: 360A
Voltage: 1200V
Voltage - Isolation: 2500Vrms
Package / Case: Power Module

패키지: Power Module

재고4,960

GDP30S120B

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 30A TO247-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 1790pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 135°C

패키지: TO-247-2

재고3,840

GDP12S060A

Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 487pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 135°C

패키지: TO-220-2

재고2,992

GDP06S060D

Global Power Technologies Group

DIODE SCHOTTKY 600V 6A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 243pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 135°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,968

GP2D020A170B

Global Power Technologies Group

DIODE SCHOTTKY 1.7KV 20A TO247-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 1700V
Capacitance @ Vr, F: 1624pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고7,512

GP2D030A060B

Global Power Technologies Group

DIODE SCHOTTKY 600V 30A TO247-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 30A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: 1581pF @ 1V, 1MHZ
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고6,168

GP2D005A170B

Global Power Technologies Group

DIODE SCHOTTKY 1700V 5A TO247-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 1700V
Capacitance @ Vr, F: 406pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-247-2

재고10,824

GDP60D120B

Global Power Technologies Group

DIODE SCHOTTKY 1200V 30A TO247-3

Diode Configuration: 1 Pair Common Anode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature - Junction: -55°C ~ 135°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고4,064

GDP24D060B

Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO247-3

Diode Configuration: 1 Pair Common Anode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 12A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 600V
Operating Temperature - Junction: -55°C ~ 135°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고7,600

GHXS050A060S-D4

Global Power Technologies Group

DIODE SCHOTT SBD 600V 50A SOT227

Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,368

GSXF060A120S1-D3

Global Power Technologies Group

DIODE FAST REC 1200V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 2.35V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,720

GSXF100A100S1-D3

Global Power Technologies Group

DIODE FAST REC 1000V 100A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 2.35V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125ns
Current - Reverse Leakage @ Vr: 25µA @ 1000V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,088

GSXD100A006S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 60V 100A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고7,776

GSXF120A020S1-D3

Global Power Technologies Group

DIODE FAST REC 200V 120A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1V @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,920

GSXD060A015S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 150V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 150V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,680

GSXD050A012S1-D3

Global Power Technologies Group

DIODE SCHOTTKY 120V 50A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 120V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,520

GHXS060A120S-D3

Global Power Technologies Group

MOD SBD BRIDGE 1200V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,888

GHXS020A060S-D1

Global Power Technologies Group

MOD SBD BRIDGE 600V 20A SOT227

Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Current - Reverse Leakage @ Vr: 200µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고2,100