페이지 72 - IDT, Integrated Device Technology Inc 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
71V321L25TF8	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	패키지: 64-LQFP	재고3,904	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
71321SA35TFG	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP	패키지: 64-LQFP	재고5,312	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP
71V321S35PF	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고5,200	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
71421LA35PF	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고2,192	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
7134LA45J	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 45NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고4,128	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
71342LA45J	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 45NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고6,560	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
71321SA35TF	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	패키지: 64-LQFP	재고7,920	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
71321LA35PF	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고6,496	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
71342LA25PF8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고5,584	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
71V30L35TFGI	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	패키지: 64-LQFP	재고6,640	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
6116SA90TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 90NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고6,848	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	90ns	90ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116SA90DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 90NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고7,360	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	90ns	90ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116SA70TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 70NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고5,040	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116SA70DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 70NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고6,224	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116SA55DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 55NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고2,160	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116SA45DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 45NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고6,656	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116SA35TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고3,056	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116SA150TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 120NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고5,712	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	150ns	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116SA150DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 120NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고5,152	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	150ns	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116SA120TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 120NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 120ns Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고5,248	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	120ns	120ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116LA90TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 90NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고5,760	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	90ns	90ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116LA70TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 70NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고6,448	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116LA70DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 70NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고5,664	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116LA55TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 55NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고4,416	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116LA55DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 55NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고6,544	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116LA45TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 45NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고5,776	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
6116LA45DB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 45NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.600", 15.24mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.600", 15.24mm)	재고2,816	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.600", 15.24mm)	24-CDIP
6116LA35TDB	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: 24-CDIP (0.300", 7.62mm)	재고5,312	SRAM	SRAM - Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP

71V321L25TF8

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

패키지: 64-LQFP

재고3,904

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

71321SA35TFG

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP

패키지: 64-LQFP

재고5,312

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP

71V321S35PF

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고5,200

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

71421LA35PF

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고2,192

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

7134LA45J

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 45NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고4,128

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

71342LA45J

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 45NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고6,560

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

71321SA35TF

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

패키지: 64-LQFP

재고7,920

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

71321LA35PF

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고6,496

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

71342LA25PF8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고5,584

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

71V30L35TFGI

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

패키지: 64-LQFP

재고6,640

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

6116SA90TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 90NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고6,848

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116SA90DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 90NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고7,360

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116SA70TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 70NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고5,040

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116SA70DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 70NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고6,224

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116SA55DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고2,160

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116SA45DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고6,656

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116SA35TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고3,056

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116SA150TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 120NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고5,712

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116SA150DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 120NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고5,152

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116SA120TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 120NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 120ns
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고5,248

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116LA90TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 90NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고5,760

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116LA70TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 70NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고6,448

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116LA70DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 70NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고5,664

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116LA55TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고4,416

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116LA55DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고6,544

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116LA45TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고5,776

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

6116LA45DB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 45NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.600", 15.24mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.600", 15.24mm)

재고2,816

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.600", 15.24mm)

24-CDIP

6116LA35TDB

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: 24-CDIP (0.300", 7.62mm)

재고5,312

SRAM

SRAM - Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP