페이지 5 - Infineon Technologies 제품 - 트랜지스터 - 양극(BJT) - RF | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - 양극(BJT) - RF

기록 202
페이지  5/8
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 360L3 E6327
Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
  • Gain: 11.5dB ~ 16dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
패키지: SC-101, SOT-883
재고2,288
9V
14GHz
1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
11.5dB ~ 16dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
BFR 340T E6327
Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
  • Gain: 15dB
  • Power - Max: 60mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
패키지: SC-75, SOT-416
재고7,600
9V
14GHz
1.15dB @ 1.8GHz
15dB
60mW
60 @ 5mA, 3V
10mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFR 183T E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 19.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
패키지: SC-75, SOT-416
재고5,808
12V
8GHz
1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
19.5dB
250mW
50 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFR 182T E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
패키지: SC-75, SOT-416
재고6,528
12V
8GHz
1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz
20dB
250mW
50 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFR 182 B6663
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 12dB ~ 18dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고4,736
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
12dB ~ 18dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFR 181T E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
  • Gain: 19.5dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
패키지: SC-75, SOT-416
재고7,712
12V
8GHz
1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
19.5dB
175mW
50 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
BFR 181 E6780
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 18.5dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고6,592
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
18.5dB
175mW
70 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFP 620F E7764
Infineon Technologies

TRANSISTOR RF NPN 2.3V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 65GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 21dB
  • Power - Max: 185mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
패키지: 4-SMD, Flat Leads
재고4,848
2.8V
65GHz
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
21dB
185mW
110 @ 50mA, 1.5V
80mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFP420E6433HTMA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고2,432
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP405E6433HTMA1
Infineon Technologies

TRANSISTOR RF NPN 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고5,344
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP 196R E6501
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16.5dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
패키지: TO-253-4, TO-253AA
재고6,752
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16.5dB
700mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
PG-SOT143-4
BFG 235 E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 900MHz
  • Gain: 12.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 200mA, 8V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고4,352
15V
5.5GHz
1.7dB @ 900MHz
12.5dB
2W
75 @ 200mA, 8V
300mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BFG 19S E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 900MHz ~ 1.8GHz
  • Gain: 14dB ~ 8.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 210mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고6,384
15V
5.5GHz
2dB ~ 3dB @ 900MHz ~ 1.8GHz
14dB ~ 8.5dB
1W
70 @ 70mA, 8V
210mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BFG 196 E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Gain: 9dB ~ 14.5dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고5,168
12V
7.5GHz
1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
9dB ~ 14.5dB
800mW
70 @ 50mA, 8V
150mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BFG 193 E6433
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고4,000
12V
8GHz
1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
600mW
70 @ 30mA, 8V
80mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BF799WE6327BTSA1
Infineon Technologies

TRANSISTOR NPN RF 20V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 3dB @ 100MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고2,176
20V
800MHz
3dB @ 100MHz
-
280mW
40 @ 20mA, 10V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BF 775 E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고3,568
15V
5GHz
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
10.5dB ~ 16dB
280mW
70 @ 15mA, 8V
45mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BF 770A E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9.5dB ~ 14.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고5,072
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
9.5dB ~ 14.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFP640FE6327
Infineon Technologies

TRANSISTOR NPN RF 4V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
패키지: 4-SMD, Flat Leads
재고4,976
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
23dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFG135AE6327XT
Infineon Technologies

TRANS NPN RF 15V 150MA SOT223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9dB ~ 14dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고2,768
15V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
9dB ~ 14dB
1W
80 @ 100mA, 8V
150mA
-
Surface Mount
TO-261-4, TO-261AA
PG-SOT223-4
BFS17SE6327HTSA1
Infineon Technologies

DUAL NPN TRANS RADIO FREQ BROAD

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고7,216
15V
1.4GHz
3dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
BFP650
Infineon Technologies

TRANS NPN RF 4V 150MA SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 37GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
  • Gain: 10.5dB ~ 21.5dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고5,360
4.5V
37GHz
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
10.5dB ~ 21.5dB
500mW
110 @ 80mA, 3V
150mA
-
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFT92E6327
Infineon Technologies

TRANS PNP RF 15V SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
  • Gain: 8dB ~ 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고6,304
15V
5GHz
2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
8dB ~ 13.5dB
200mW
15 @ 15mA, 8V
25mA
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
BFP520E6327BTSA1
Infineon Technologies

TRANS NPN RF 2.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 24dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고7,232
3.5V
45GHz
0.95dB @ 1.8GHz
24dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP450E6327BTSA1
Infineon Technologies

TRANS NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고5,216
5V
24GHz
1.25dB @ 1.8GHz
15.5dB
450mW
60 @ 50mA, 4V
100mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP420E6327BTSA1
Infineon Technologies

TRANS NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 21dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고3,776
5V
25GHz
1.1dB @ 1.8GHz
21dB
160mW
60 @ 20mA, 4V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP405E6327BTSA1
Infineon Technologies

TRANS NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
패키지: SC-82A, SOT-343
재고4,048
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFQ 19S E6327
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
  • Gain: 7dB ~ 11.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 210mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89
패키지: TO-243AA
재고7,984
15V
5.5GHz
1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
7dB ~ 11.5dB
1W
70 @ 70mA, 8V
210mA
150°C (TJ)
Surface Mount
TO-243AA
PG-SOT89