페이지 35 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 모듈

기록 1,314
페이지  35/47
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설명
패키지
재고
수량
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
FP75R12KT4B15BOSA1
Infineon Technologies

IGBT MOD 1200V 75A 385W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 75 A
  • Power - Max: 385 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Three Phase Inverter
1200 V
75 A
385 W
2.15V @ 15V, 75A
1 mA
4.3 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FF300R08W2P2B11ABOMA1
Infineon Technologies

EASY PACK AG-EASY2B-3

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 1.18V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 53 nF @ 50 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B-3
패키지: -
재고27
2 Independent
750 V
200 A
-
1.18V @ 15V, 200A
1 mA
53 nF @ 50 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY2B-3
FF1000R17IE4PBOSA1
Infineon Technologies

IGBT MODULE 1700V 1000A

  • IGBT Type: Trench Field Stop
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1000 A
  • Power - Max: 1000000 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고12
2 Independent
1700 V
1000 A
1000000 W
2.45V @ 15V, 1000A
5 mA
81 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FS50R17KE3B17BOSA1
Infineon Technologies

IGBT MOD 1700V 82A 345W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 82 A
  • Power - Max: 345 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1700 V
82 A
345 W
2.45V @ 15V, 50A
1 mA
4.5 nF @ 25 V
Standard
No
-40°C ~ 125°C
Chassis Mount
Module
Module
FZ600R12KE3HOSA1
Infineon Technologies

IGBT MOD 1200V 900A 2800W

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 900 A
  • Power - Max: 2800 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 42 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Single
1200 V
900 A
2800 W
2.15V @ 15V, 600A
5 mA
42 nF @ 25 V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
IFS100B17N3E4PB11BPSA1
Infineon Technologies

IGBT MOD 1700V 150A 600W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 600 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1700 V
150 A
600 W
2.3V @ 15V, 100A
1 mA
9 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
BSM300GA170DLS
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 2500 W
  • Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 600 µA
  • Input Capacitance (Cies) @ Vce: 20 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1700 V
600 A
2500 W
3.3V @ 15V, 300A
600 µA
20 nF @ 25 V
Standard
No
-40°C ~ 125°C (TJ)
Chassis Mount
Module
Module
FP50R07N2E4BPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고45
Three Phase Inverter
650 V
70 A
20 mW
1.95V @ 15V, 50A
1 mA
3.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
FF1800XTR17T2P5PBPSA1
Infineon Technologies

XHP LV

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 1800 A
  • Power - Max: 1800000 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 1.8kA
  • Current - Collector Cutoff (Max): 10 mA
  • Input Capacitance (Cies) @ Vce: 84000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Half Bridge Inverter
1700 V
1800 A
1800000 W
2.25V @ 15V, 1.8kA
10 mA
84000 pF @ 25 V
Standard
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
FS200R07A1E3BOMA1
Infineon Technologies

MODULE IGBT HYBRID PK

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 250 A
  • Power - Max: 790 W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRID1-1
패키지: -
Request a Quote
Three Phase Inverter
650 V
250 A
790 W
1.9V @ 15V, 200A
1 mA
13 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-HYBRID1-1
FZ800R12KF5NOSA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FS35R12KE3GBOSA1
Infineon Technologies

IGBT MOD 1200V 55A 200W

  • IGBT Type: -
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 55 A
  • Power - Max: 200 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1200 V
55 A
200 W
2.15V @ 15V, 35A
5 mA
2.5 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FS25R12KT3BOSA1
Infineon Technologies

IGBT MOD 1200V 40A 145W

  • IGBT Type: Trench Field Stop
  • Configuration: Full Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Power - Max: 145 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Full Bridge
1200 V
40 A
145 W
2.15V @ 15V, 25A
5 mA
1.8 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
FP35R12W2T7B11BOMA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
  • Current - Collector Cutoff (Max): 5.8 µA
  • Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B-2
패키지: -
재고33
Three Phase Inverter
1200 V
35 A
20 mW
1.6V @ 15V, 35A
5.8 µA
6.62 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY2B-2
F4250R07W2H5FB11BPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고45
-
-
-
-
-
-
-
-
-
-
-
-
-
FS100R17N3E4B11BOSA1
Infineon Technologies

IGBT MOD 1700V 100A 600W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 600 W
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고30
Three Phase Inverter
1700 V
100 A
600 W
2.3V @ 15V, 100A
1 mA
9 nF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
Module
FP50R12W2T7PBPSA1
Infineon Technologies

LOW POWER EASY

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
  • Current - Collector Cutoff (Max): 5 µA
  • Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B
패키지: -
Request a Quote
Three Phase Inverter
1200 V
50 A
20 mW
1.6V @ 15V, 35A
5 µA
11.1 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY2B
FP10R12W1T7BOMA1
Infineon Technologies

LOW POWER EASY AG-EASY1B-1

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 10 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): 4.5 µA
  • Input Capacitance (Cies) @ Vce: 1.89 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
재고69
Three Phase Inverter
1200 V
10 A
20 mW
-
4.5 µA
1.89 nF @ 25 V
Three Phase Bridge Rectifier
Yes
-40°C ~ 175°C (TJ)
Chassis Mount
Module
AG-EASY1B
P2000DL45X168APT8HPSA1
Infineon Technologies

PRESS PACK IGBT

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
FF650R17IE4B60BPSA1
Infineon Technologies

PP IHM I

  • IGBT Type: -
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 930 A
  • Power - Max: 4.15 kW
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
Half Bridge Inverter
1700 V
930 A
4.15 kW
2.45V @ 15V, 650A
5 mA
54000 pF @ 25 V
Standard
Yes
-40°C ~ 150°C
Chassis Mount
Module
-
DDB6U134N16RRB11BPSA2
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-211

  • IGBT Type: -
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 125 A
  • Power - Max: 400 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고36
Single Chopper
1200 V
125 A
400 W
2.6V @ 15V, 75A
1 mA
5.1 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
DDB6U134N16RRB11BPSA1
Infineon Technologies

IGBT MODULE

  • IGBT Type: -
  • Configuration: Single Chopper
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 125 A
  • Power - Max: 400 W
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
Request a Quote
Single Chopper
1200 V
125 A
400 W
2.6V @ 15V, 75A
1 mA
5.1 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-ECONO2B
FB50R07W2E3B23BOMA1
Infineon Technologies

LOW POWER EASY AG-EASY2B-2

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고39
-
-
-
-
-
-
-
-
-
-
-
-
-
FF600R12IS4F
Infineon Technologies

IGBT MOD 1200V 600A 3700W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 3700 W
  • Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 600A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 39 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2 Independent
1200 V
600 A
3700 W
3.75V @ 15V, 600A
5 mA
39 nF @ 25 V
Standard
Yes
-40°C ~ 125°C
Chassis Mount
Module
Module
P2000DL45X168HPSA1
Infineon Technologies

PRESS PACK IGBT

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 4500 V
  • Current - Collector (Ic) (Max): 2000 A
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2000A
  • Current - Collector Cutoff (Max): 200 µA
  • Input Capacitance (Cies) @ Vce: 420 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: BG-P16826K-1
패키지: -
재고3
Single
4500 V
2000 A
-
2.5V @ 15V, 2000A
200 µA
420 nF @ 25 V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
TO-200AF
BG-P16826K-1
FS35R12KE3GBPSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO2B-311

  • IGBT Type: -
  • Configuration: Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 55 A
  • Power - Max: 200 W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
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Full Bridge Inverter
1200 V
55 A
200 W
2.15V @ 15V, 35A
5 mA
2.5 nF @ 25 V
Standard
Yes
-40°C ~ 125°C (TJ)
Chassis Mount
Module
AG-ECONO2B
FS200R07A02E3S6BKSA2
Infineon Technologies

IGBT MODULE HYBRID 28MDIP

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase
  • Voltage - Collector Emitter Breakdown (Max): 700 V
  • Current - Collector (Ic) (Max): 200 A
  • Power - Max: 694 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: PG-MDIP-28
패키지: -
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Three Phase
700 V
200 A
694 W
2.25V @ 15V, 200A
100 µA
13.5 nF @ 25 V
Standard
Yes
-40°C ~ 150°C (TJ)
Chassis Mount
Module
PG-MDIP-28
FZ2400R17HP4B9HOSA2
Infineon Technologies

IGBT MODULE 1700V 4800A

  • IGBT Type: Trench
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 4800 A
  • Power - Max: 15500 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고3
Single Switch
1700 V
4800 A
15500 W
2.25V @ 15V, 2400A
5 mA
195 nF @ 25 V
Standard
No
-40°C ~ 150°C
Chassis Mount
Module
Module