페이지 10 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

IGC70T120T8RQ

Infineon Technologies

IGBT 1200V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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1200 V

-

225 A

2.42V @ 15V, 75A

-

Standard

-

Surface Mount

Die

IGC70T120T8RL

Infineon Technologies

IGBT 1200V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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1200 V

-

225 A

2.07V @ 15V, 75A

-

Standard

-

Surface Mount

Die

SIGC19T60SEX1SA1

Infineon Technologies

IGBT 3 CHIP 600V

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

40 A

120 A

1.97V @ 15V, 40A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IGC07T120T8LX1SA2

Infineon Technologies

IGBT 1200V 4A SAWN ON FOIL

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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1200 V

-

12 A

2.02V @ 15V, 4A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

SIGC42T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC42T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IRGB15B60KDPBF-INF

Infineon Technologies

IGBT, 31A I(C), 600V V(BR)CES, N

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Current - Collector Pulsed (Icm): 62 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 208 W
Switching Energy: 220µJ (on), 340µJ (off)
Input Type: Standard
Gate Charge: 84 nC
Td (on/off) @ 25°C: 34ns/184ns
Test Condition: 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): 92 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

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600 V

31 A

62 A

2.2V @ 15V, 15A

208 W

220µJ (on), 340µJ (off)

Standard

84 nC

34ns/184ns

400V, 15A, 22Ohm, 15V

92 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IKFW50N60DH3EXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 40A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Power - Max: 130 W
Switching Energy: 1.28mJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 160 nC
Td (on/off) @ 25°C: 21ns/174ns
Test Condition: 400V, 40A, 8Ohm, 15V
Reverse Recovery Time (trr): 64 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-AI

패키지: -

재고465

600 V

40 A

120 A

2.7V @ 15V, 40A

130 W

1.28mJ (on), 560µJ (off)

Standard

160 nC

21ns/174ns

400V, 40A, 8Ohm, 15V

64 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-AI

IKWH50N65WR6XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 85A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Power - Max: 205 W
Switching Energy: 1.5mJ (on), 730µJ (off)
Input Type: Standard
Gate Charge: 144 nC
Td (on/off) @ 25°C: 40ns/351ns
Test Condition: 400V, 50A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

패키지: -

재고1,434

650 V

85 A

150 A

1.85V @ 15V, 50A

205 W

1.5mJ (on), 730µJ (off)

Standard

144 nC

40ns/351ns

400V, 50A, 22Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

IKD08N65ET6ARMA1

Infineon Technologies

IGBT TRENCH FS 650V 15A TO252-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 25 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Power - Max: 47 W
Switching Energy: 110µJ (on), 40µJ (off)
Input Type: Standard
Gate Charge: 17 nC
Td (on/off) @ 25°C: 20ns/59ns
Test Condition: 400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr): 43 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

패키지: -

재고8,982

650 V

15 A

25 A

1.9V @ 15V, 5A

47 W

110µJ (on), 40µJ (off)

Standard

17 nC

20ns/59ns

400V, 5A, 47Ohm, 15V

43 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PG-TO252-3

FD1200R12IE4B1S1BDMA1

Infineon Technologies

FD1200R12IE4B1S1BD - IGBT

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

SIGC18T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 36ns/250ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

36ns/250ns

400V, 20A, 16Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC18T60SNCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 36ns/250ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

36ns/250ns

400V, 20A, 16Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC18T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 36ns/250ns
Test Condition: 400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

20 A

60 A

2.5V @ 15V, 20A

-

Standard

-

36ns/250ns

400V, 20A, 16Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

63-8035

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

63-8028

Infineon Technologies

IGBT CHIP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

IGC18T120T8LX1SA2

Infineon Technologies

IGBT 1200V 15A SAWN ON FOIL

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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1200 V

-

45 A

2.07V @ 15V, 15A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IGW50N60TFKSA1

Infineon Technologies

IGBT TRENCH FS 600V 100A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Power - Max: 333 W
Switching Energy: 2.6mJ
Input Type: Standard
Gate Charge: 310 nC
Td (on/off) @ 25°C: 26ns/299ns
Test Condition: 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

패키지: -

재고777

600 V

100 A

150 A

2V @ 15V, 50A

333 W

2.6mJ

Standard

310 nC

26ns/299ns

400V, 50A, 7Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

SIGC121T60NR2CX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 450 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 125ns/225ns
Test Condition: 300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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600 V

150 A

450 A

2.5V @ 15V, 150A

-

Standard

-

125ns/225ns

300V, 150A, 1.5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKN04N60RC2ATMA1

Infineon Technologies

IGBT 600V 7.5A SOT223-3

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 7.5 A
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
Power - Max: 6.8 W
Switching Energy: 95µJ (on), 62µJ (off)
Input Type: Standard
Gate Charge: 24 nC
Td (on/off) @ 25°C: 8ns/126ns
Test Condition: 400V, 4A, 49Ohm, 15V
Reverse Recovery Time (trr): 39 ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-3

패키지: -

재고8,592

600 V

7.5 A

12 A

2.3V @ 15V, 4A

6.8 W

95µJ (on), 62µJ (off)

Standard

24 nC

8ns/126ns

400V, 4A, 49Ohm, 15V

39 ns

-40°C ~ 150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-3

IGC99T120T8RQX1SA1

Infineon Technologies

IGBT CHIP

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

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1200 V

100 A

300 A

2.42V @ 15V, 100A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IKFW40N65DH5XKSA1

Infineon Technologies

HOME APPLIANCES 14 PG-HSIP247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 53 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A
Power - Max: 106 W
Switching Energy: 1.17mJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 70 nC
Td (on/off) @ 25°C: 18ns/105ns
Test Condition: 400V, 40A, 14Ohm, 15V
Reverse Recovery Time (trr): 64 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-HSIP247-3-2

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650 V

53 A

120 A

2.25V @ 15V, 40A

106 W

1.17mJ (on), 500µJ (off)

Standard

70 nC

18ns/105ns

400V, 40A, 14Ohm, 15V

64 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-HSIP247-3-2

IKZA40N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
Power - Max: 210 W
Switching Energy: 0.37mJ (on), 0.36mJ (off)
Input Type: Standard
Gate Charge: 81 nC
Td (on/off) @ 25°C: 13ns/134ns
Test Condition: 400V, 40A, 12.5Ohm, 15V
Reverse Recovery Time (trr): 49.6 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-3

패키지: -

재고720

650 V

80 A

160 A

1.65V @ 15V, 40A

210 W

0.37mJ (on), 0.36mJ (off)

Standard

81 nC

13ns/134ns

400V, 40A, 12.5Ohm, 15V

49.6 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-3

IRFP4227PBFXKMA1

Infineon Technologies

TRENCH >=100V

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

IKP20N60TXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 40A TO220-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Power - Max: 166 W
Switching Energy: 770µJ
Input Type: Standard
Gate Charge: 120 nC
Td (on/off) @ 25°C: 18ns/199ns
Test Condition: 400V, 20A, 12Ohm, 15V
Reverse Recovery Time (trr): 41 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1

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600 V

40 A

60 A

2.05V @ 15V, 20A

166 W

770µJ

Standard

120 nC

18ns/199ns

400V, 20A, 12Ohm, 15V

41 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-220-3

PG-TO220-3-1

IKZA75N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Power - Max: 338 W
Switching Energy: 0.75mJ (on), 0.84mJ (off)
Input Type: Standard
Gate Charge: 152 nC
Td (on/off) @ 25°C: 26ns/199ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 56 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-3

패키지: -

재고642

650 V

80 A

300 A

1.65V @ 15V, 75A

338 W

0.75mJ (on), 0.84mJ (off)

Standard

152 nC

26ns/199ns

400V, 75A, 10Ohm, 15V

56 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-3

IKB30N65EH5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 55A TO263-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 55 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 188 W
Switching Energy: 870µJ (on), 300µJ (off)
Input Type: Standard
Gate Charge: 70 nC
Td (on/off) @ 25°C: 24ns/159ns
Test Condition: 400V, 30A, 22Ohm, 15V
Reverse Recovery Time (trr): 75 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3

패키지: -

재고14,790

650 V

55 A

90 A

2.1V @ 15V, 30A

188 W

870µJ (on), 300µJ (off)

Standard

70 nC

24ns/159ns

400V, 30A, 22Ohm, 15V

75 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3

IGC50T120T8RLX7SA2

Infineon Technologies

IGBT 1200V 50A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

1200 V

-

150 A

2.07V @ 15V, 50A

-

Standard

-

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IGC70T120T8RQ	Infineon Technologies	IGBT 1200V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	-	225 A	2.42V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IGC70T120T8RL	Infineon Technologies	IGBT 1200V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	-	225 A	2.07V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
SIGC19T60SEX1SA1	Infineon Technologies	IGBT 3 CHIP 600V IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	40 A	120 A	1.97V @ 15V, 40A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IGC07T120T8LX1SA2	Infineon Technologies	IGBT 1200V 4A SAWN ON FOIL IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 12 A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	-	12 A	2.02V @ 15V, 4A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
SIGC42T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC42T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGB15B60KDPBF-INF	Infineon Technologies	IGBT, 31A I(C), 600V V(BR)CES, N IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 62 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208 W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 84 nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 92 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	Request a Quote	600 V	31 A	62 A	2.2V @ 15V, 15A	208 W	220µJ (on), 340µJ (off)	Standard	84 nC	34ns/184ns	400V, 15A, 22Ohm, 15V	92 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IKFW50N60DH3EXKSA1	Infineon Technologies	IGBT TRENCH FS 600V 40A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 130 W Switching Energy: 1.28mJ (on), 560µJ (off) Input Type: Standard Gate Charge: 160 nC Td (on/off) @ 25°C: 21ns/174ns Test Condition: 400V, 40A, 8Ohm, 15V Reverse Recovery Time (trr): 64 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-AI	패키지: -	재고465	600 V	40 A	120 A	2.7V @ 15V, 40A	130 W	1.28mJ (on), 560µJ (off)	Standard	160 nC	21ns/174ns	400V, 40A, 8Ohm, 15V	64 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-AI
IKWH50N65WR6XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 85A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 85 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: 205 W Switching Energy: 1.5mJ (on), 730µJ (off) Input Type: Standard Gate Charge: 144 nC Td (on/off) @ 25°C: 40ns/351ns Test Condition: 400V, 50A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	패키지: -	재고1,434	650 V	85 A	150 A	1.85V @ 15V, 50A	205 W	1.5mJ (on), 730µJ (off)	Standard	144 nC	40ns/351ns	400V, 50A, 22Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
IKD08N65ET6ARMA1	Infineon Technologies	IGBT TRENCH FS 650V 15A TO252-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 25 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A Power - Max: 47 W Switching Energy: 110µJ (on), 40µJ (off) Input Type: Standard Gate Charge: 17 nC Td (on/off) @ 25°C: 20ns/59ns Test Condition: 400V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 43 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	패키지: -	재고8,982	650 V	15 A	25 A	1.9V @ 15V, 5A	47 W	110µJ (on), 40µJ (off)	Standard	17 nC	20ns/59ns	400V, 5A, 47Ohm, 15V	43 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3
FD1200R12IE4B1S1BDMA1	Infineon Technologies	FD1200R12IE4B1S1BD - IGBT IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIGC18T60SNCX1SA4	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 36ns/250ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	36ns/250ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC18T60SNCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 36ns/250ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	36ns/250ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC18T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 20 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 36ns/250ns Test Condition: 400V, 20A, 16Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	20 A	60 A	2.5V @ 15V, 20A	-	-	Standard	-	36ns/250ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
63-8035	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
63-8028	Infineon Technologies	IGBT CHIP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGC18T120T8LX1SA2	Infineon Technologies	IGBT 1200V 15A SAWN ON FOIL IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	-	45 A	2.07V @ 15V, 15A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IGW50N60TFKSA1	Infineon Technologies	IGBT TRENCH FS 600V 100A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Power - Max: 333 W Switching Energy: 2.6mJ Input Type: Standard Gate Charge: 310 nC Td (on/off) @ 25°C: 26ns/299ns Test Condition: 400V, 50A, 7Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	패키지: -	재고777	600 V	100 A	150 A	2V @ 15V, 50A	333 W	2.6mJ	Standard	310 nC	26ns/299ns	400V, 50A, 7Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
SIGC121T60NR2CX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 450 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 125ns/225ns Test Condition: 300V, 150A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	600 V	150 A	450 A	2.5V @ 15V, 150A	-	-	Standard	-	125ns/225ns	300V, 150A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKN04N60RC2ATMA1	Infineon Technologies	IGBT 600V 7.5A SOT223-3 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 7.5 A Current - Collector Pulsed (Icm): 12 A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A Power - Max: 6.8 W Switching Energy: 95µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 24 nC Td (on/off) @ 25°C: 8ns/126ns Test Condition: 400V, 4A, 49Ohm, 15V Reverse Recovery Time (trr): 39 ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-3	패키지: -	재고8,592	600 V	7.5 A	12 A	2.3V @ 15V, 4A	6.8 W	95µJ (on), 62µJ (off)	Standard	24 nC	8ns/126ns	400V, 4A, 49Ohm, 15V	39 ns	-40°C ~ 150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-3
IGC99T120T8RQX1SA1	Infineon Technologies	IGBT CHIP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	1200 V	100 A	300 A	2.42V @ 15V, 100A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IKFW40N65DH5XKSA1	Infineon Technologies	HOME APPLIANCES 14 PG-HSIP247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 53 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 40A Power - Max: 106 W Switching Energy: 1.17mJ (on), 500µJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 18ns/105ns Test Condition: 400V, 40A, 14Ohm, 15V Reverse Recovery Time (trr): 64 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-HSIP247-3-2	패키지: -	Request a Quote	650 V	53 A	120 A	2.25V @ 15V, 40A	106 W	1.17mJ (on), 500µJ (off)	Standard	70 nC	18ns/105ns	400V, 40A, 14Ohm, 15V	64 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-HSIP247-3-2
IKZA40N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A Power - Max: 210 W Switching Energy: 0.37mJ (on), 0.36mJ (off) Input Type: Standard Gate Charge: 81 nC Td (on/off) @ 25°C: 13ns/134ns Test Condition: 400V, 40A, 12.5Ohm, 15V Reverse Recovery Time (trr): 49.6 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-3	패키지: -	재고720	650 V	80 A	160 A	1.65V @ 15V, 40A	210 W	0.37mJ (on), 0.36mJ (off)	Standard	81 nC	13ns/134ns	400V, 40A, 12.5Ohm, 15V	49.6 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-3
IRFP4227PBFXKMA1	Infineon Technologies	TRENCH >=100V IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKP20N60TXKSA1	Infineon Technologies	IGBT TRENCH FS 600V 40A TO220-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A Power - Max: 166 W Switching Energy: 770µJ Input Type: Standard Gate Charge: 120 nC Td (on/off) @ 25°C: 18ns/199ns Test Condition: 400V, 20A, 12Ohm, 15V Reverse Recovery Time (trr): 41 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1	패키지: -	Request a Quote	600 V	40 A	60 A	2.05V @ 15V, 20A	166 W	770µJ	Standard	120 nC	18ns/199ns	400V, 20A, 12Ohm, 15V	41 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-220-3	PG-TO220-3-1
IKZA75N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Power - Max: 338 W Switching Energy: 0.75mJ (on), 0.84mJ (off) Input Type: Standard Gate Charge: 152 nC Td (on/off) @ 25°C: 26ns/199ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 56 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-3	패키지: -	재고642	650 V	80 A	300 A	1.65V @ 15V, 75A	338 W	0.75mJ (on), 0.84mJ (off)	Standard	152 nC	26ns/199ns	400V, 75A, 10Ohm, 15V	56 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-3
IKB30N65EH5ATMA1	Infineon Technologies	IGBT TRENCH FS 650V 55A TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 55 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 188 W Switching Energy: 870µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 70 nC Td (on/off) @ 25°C: 24ns/159ns Test Condition: 400V, 30A, 22Ohm, 15V Reverse Recovery Time (trr): 75 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	패키지: -	재고14,790	650 V	55 A	90 A	2.1V @ 15V, 30A	188 W	870µJ (on), 300µJ (off)	Standard	70 nC	24ns/159ns	400V, 30A, 22Ohm, 15V	75 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3
IGC50T120T8RLX7SA2	Infineon Technologies	IGBT 1200V 50A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	1200 V	-	150 A	2.07V @ 15V, 50A	-	-	Standard	-	-	-	-	-	-	-	-