페이지 17 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  17/52
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG4PC30KDPBF
Infineon Technologies

IGBT 600V 28A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 58A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고18,660
600V
28A
58A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IHW20N135R5XKSA1
Infineon Technologies

IGBT 1350V 40A 288W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
  • Power - Max: 288W
  • Switching Energy: 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,884
1350V
40A
60A
1.85V @ 15V, 20A
288W
950µJ (off)
Standard
170nC
-/235ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKW20N60TFKSA1
Infineon Technologies

IGBT 600V 40A 166W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
  • Power - Max: 166W
  • Switching Energy: 770µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 18ns/199ns
  • Test Condition: 400V, 20A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,432
600V
40A
60A
2.05V @ 15V, 20A
166W
770µJ
Standard
120nC
18ns/199ns
400V, 20A, 12 Ohm, 15V
41ns
-
Through Hole
TO-247-3
PG-TO247-3
hot IRG4IBC30KDPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 45W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고54,000
600V
17A
34A
2.7V @ 15V, 16A
45W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IRG4BC30FD1PBF
Infineon Technologies

IGBT 600V 31A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 124A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 370µJ (on), 1.42mJ (off)
  • Input Type: Standard
  • Gate Charge: 57nC
  • Td (on/off) @ 25°C: 22ns/250ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 46ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고6,780
600V
31A
124A
1.8V @ 15V, 17A
100W
370µJ (on), 1.42mJ (off)
Standard
57nC
22ns/250ns
480V, 17A, 23 Ohm, 15V
46ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG4IBC30UDPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 45W
  • Switching Energy: 380µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 40ns/91ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고22,974
600V
17A
68A
2.1V @ 15V, 12A
45W
380µJ (on), 160µJ (off)
Standard
50nC
40ns/91ns
480V, 12A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
hot IRG4BC40FPBF
Infineon Technologies

IGBT 600V 49A 160W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 49A
  • Current - Collector Pulsed (Icm): 196A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
  • Power - Max: 160W
  • Switching Energy: 370µJ (on), 1.81mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 26ns/240ns
  • Test Condition: 480V, 27A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고52,128
600V
49A
196A
1.7V @ 15V, 27A
160W
370µJ (on), 1.81mJ (off)
Standard
100nC
26ns/240ns
480V, 27A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKP40N65H5XKSA1
Infineon Technologies

IGBT 650V 74A 255W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 390µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 22ns/165ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
패키지: TO-220-3
재고7,800
650V
74A
120A
2.1V @ 15V, 40A
255W
390µJ (on), 120µJ (off)
Standard
95nC
22ns/165ns
400V, 20A, 15 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IHW20N65R5XKSA1
Infineon Technologies

IGBT 650V 40A 150W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 300µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 24ns/250ns
  • Test Condition: 400V, 10A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,216
650V
40A
60A
1.7V @ 15V, 20A
150W
300µJ (on), 70µJ (off)
Standard
97nC
24ns/250ns
400V, 10A, 20 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRGB5B120KDPBF
Infineon Technologies

IGBT 1200V 12A 89W TO220AB

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A
  • Power - Max: 89W
  • Switching Energy: 390µJ (on), 330µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 600V, 6A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 160ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고7,608
1200V
12A
24A
3V @ 15V, 6A
89W
390µJ (on), 330µJ (off)
Standard
25nC
22ns/100ns
600V, 6A, 50 Ohm, 15V
160ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRGB4056DPBF
Infineon Technologies

IGBT 600V 24A 140W TO220AB

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 75µJ (on), 225µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고35,808
600V
24A
48A
1.85V @ 15V, 12A
140W
75µJ (on), 225µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGS15B60KDTRRP
Infineon Technologies

IGBT 600V 31A 208W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 62A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고18,768
600V
31A
62A
2.2V @ 15V, 15A
208W
220µJ (on), 340µJ (off)
Standard
56nC
34ns/184ns
400V, 15A, 22 Ohm, 15V
92ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGW15T120FKSA1
Infineon Technologies

IGBT 1200V 30A 110W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 110W
  • Switching Energy: 2.7mJ
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 50ns/520ns
  • Test Condition: 600V, 15A, 56 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,248
1200V
30A
45A
2.2V @ 15V, 15A
110W
2.7mJ
Standard
85nC
50ns/520ns
600V, 15A, 56 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4BC30SPBF
Infineon Technologies

IGBT 600V 34A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고18,402
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRG4BC20SPBF
Infineon Technologies

IGBT 600V 19A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 19A
  • Current - Collector Pulsed (Icm): 38A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: 120µJ (on), 2.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 27ns/540ns
  • Test Condition: 480V, 10A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고140,136
600V
19A
38A
1.6V @ 15V, 10A
60W
120µJ (on), 2.05mJ (off)
Standard
27nC
27ns/540ns
480V, 10A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRG4IBC10UDPBF
Infineon Technologies

IGBT 600V 6.8A 25W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.8A
  • Current - Collector Pulsed (Icm): 27A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 25W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고67,800
600V
6.8A
27A
2.6V @ 15V, 5A
25W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
hot IRGS30B60KTRRP
Infineon Technologies

IGBT 600V 78A 370W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
  • Power - Max: 370W
  • Switching Energy: 350µJ (on), 825µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 46ns/185ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,472
600V
78A
120A
2.35V @ 15V, 30A
370W
350µJ (on), 825µJ (off)
Standard
102nC
46ns/185ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4BC30KDSTRLP
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고14,796
600V
28A
56A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IGB10N60TATMA1
Infineon Technologies

IGBT 600V 20A 110W TO263-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: 430µJ
  • Input Type: Standard
  • Gate Charge: 62nC
  • Td (on/off) @ 25°C: 12ns/215ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고25,548
600V
20A
30A
2.05V @ 15V, 10A
110W
430µJ
Standard
62nC
12ns/215ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKD06N60RFATMA1
Infineon Technologies

IGBT 600V 12A 100W PG-TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 90µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 7ns/106ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고20,310
600V
12A
18A
2.5V @ 15V, 6A
100W
90µJ (on), 90µJ (off)
Standard
48nC
7ns/106ns
400V, 6A, 23 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
hot IRGP4266DPBF
Infineon Technologies

IGBT 650V 140A 455W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 2.5mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고18,960
650V
140A
300A
2.1V @ 15V, 75A
455W
2.5mJ (on), 2.2mJ (off)
Standard
210nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PF50WDPBF
Infineon Technologies

IGBT 900V 51A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): 204A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
  • Power - Max: 200W
  • Switching Energy: 2.63mJ (on), 1.34mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 71ns/150ns
  • Test Condition: 720V, 28A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고270,336
900V
51A
204A
2.7V @ 15V, 28A
200W
2.63mJ (on), 1.34mJ (off)
Standard
160nC
71ns/150ns
720V, 28A, 5 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IKW50N60TA
Infineon Technologies

IGBT 600V 80A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): 143ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
패키지: TO-247-3
재고103,464
600V
80A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
143ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IKW40T120
Infineon Technologies

IGBT 1200V 75A 270W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 270W
  • Switching Energy: 6.5mJ
  • Input Type: Standard
  • Gate Charge: 203nC
  • Td (on/off) @ 25°C: 48ns/480ns
  • Test Condition: 600V, 40A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고143,640
1200V
75A
105A
2.3V @ 15V, 40A
270W
6.5mJ
Standard
203nC
48ns/480ns
600V, 40A, 15 Ohm, 15V
240ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRG4PC50FDPBF
Infineon Technologies

IGBT 600V 70A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
  • Power - Max: 200W
  • Switching Energy: 1.5mJ (on), 2.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 55ns/240ns
  • Test Condition: 480V, 39A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고13,332
600V
70A
280A
1.6V @ 15V, 39A
200W
1.5mJ (on), 2.4mJ (off)
Standard
190nC
55ns/240ns
480V, 39A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKW25N120H3FKSA1
Infineon Technologies

IGBT 1200V 50A 326W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 326W
  • Switching Energy: 2.65mJ
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 27ns/277ns
  • Test Condition: 600V, 25A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 290ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,996
1200V
50A
100A
2.4V @ 15V, 25A
326W
2.65mJ
Standard
115nC
27ns/277ns
600V, 25A, 23 Ohm, 15V
290ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot IRG4PH50UPBF
Infineon Technologies

IGBT 1200V 45A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 180A
  • Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A
  • Power - Max: 200W
  • Switching Energy: 530µJ (on), 1.41mJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 35ns/200ns
  • Test Condition: 960V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고7,104
1200V
45A
180A
3.7V @ 15V, 24A
200W
530µJ (on), 1.41mJ (off)
Standard
160nC
35ns/200ns
960V, 24A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PH50SPBF
Infineon Technologies

IGBT 1200V 57A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 57A
  • Current - Collector Pulsed (Icm): 114A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
  • Power - Max: 200W
  • Switching Energy: 1.8mJ (on), 19.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 32ns/845ns
  • Test Condition: 960V, 33A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고51,264
1200V
57A
114A
1.7V @ 15V, 33A
200W
1.8mJ (on), 19.6mJ (off)
Standard
167nC
32ns/845ns
960V, 33A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC