페이지 21 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
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Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  21/52
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGB50N60T
Infineon Technologies

IGBT 600V 100A 333W TO263-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 333W
  • Switching Energy: 2.6mJ
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 26ns/299ns
  • Test Condition: 400V, 50A, 7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,584
600V
100A
150A
2V @ 15V, 50A
333W
2.6mJ
Standard
310nC
26ns/299ns
400V, 50A, 7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IHW20N120R5XKSA1
Infineon Technologies

IGBT 1200V 40A 288W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
  • Power - Max: 288W
  • Switching Energy: 750µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: -/260ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,632
1200V
40A
60A
1.75V @ 15V, 20A
288W
750µJ (off)
Standard
170nC
-/260ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRGS10B60KDTRLP
Infineon Technologies

IGBT 600V 22A 156W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,168
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRGS14C40LTRLP
Infineon Technologies

IGBT 430V 20A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 900ns/6µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고340,152
430V
20A
-
1.75V @ 5V, 14A
125W
-
Logic
27nC
900ns/6µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IRG4BC30S-STRLP
Infineon Technologies

IGBT 600V 34A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고15,588
600V
34A
68A
1.6V @ 15V, 18A
100W
260µJ (on), 3.45mJ (off)
Standard
50nC
22ns/540ns
480V, 18A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKD15N60RF
Infineon Technologies

IGBT 600V 30A 250W PG-TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 270µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 13ns/160ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 74ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,912
600V
30A
45A
2.5V @ 15V, 15A
250W
270µJ (on), 250µJ (off)
Standard
90nC
13ns/160ns
400V, 15A, 15 Ohm, 15V
74ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD15N60RATMA1
Infineon Technologies

IGBT 600V 30A 250W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 370µJ (on), 530µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,088
600V
30A
45A
2.1V @ 15V, 15A
250W
370µJ (on), 530µJ (off)
Standard
90nC
16ns/183ns
400V, 15A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKB06N60TATMA1
Infineon Technologies

IGBT 600V 12A 88W TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 200µJ
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 9ns/130ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 123ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO-263
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,872
600V
12A
18A
2.05V @ 15V, 6A
88W
200µJ
Standard
42nC
9ns/130ns
400V, 6A, 23 Ohm, 15V
123ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO-263
IKD06N60RAATMA1
Infineon Technologies

IGBT 600V 12A 100W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 110µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,128
600V
12A
18A
2.1V @ 15V, 6A
100W
110µJ (on), 220µJ (off)
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD10N60RATMA1
Infineon Technologies

IGBT 600V 20A 150W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 210µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,560
600V
20A
30A
2.1V @ 15V, 10A
150W
210µJ (on), 380µJ (off)
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD10N60RFATMA1
Infineon Technologies

IGBT 600V 20A 150W PG-TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,872
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
72ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD06N60RATMA1
Infineon Technologies

IGBT 600V 12A 100W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 110µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,632
600V
12A
18A
2.1V @ 15V, 6A
100W
110µJ (on), 220µJ (off)
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD03N60RF
Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 90µJ
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,592
600V
5A
7.5A
2.5V @ 15V, 2.5A
53.6W
90µJ
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
31ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UTRPBF
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 80µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 19ns/116ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,664
600V
8.5A
34A
2.6V @ 15V, 5A
38W
80µJ (on), 160µJ (off)
Standard
15nC
19ns/116ns
480V, 5A, 100 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKD04N60RFATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 60µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 12ns/116ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고7,424
600V
8A
12A
2.5V @ 15V, 4A
75W
60µJ (on), 50µJ (off)
Standard
27nC
12ns/116ns
400V, 4A, 43 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD04N60RATMA1
Infineon Technologies

IGBT 600V 8A 75W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 90µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,376
600V
8A
12A
2.1V @ 15V, 4A
75W
90µJ (on), 150µJ (off)
Standard
27nC
14ns/146ns
400V, 4A, 43 Ohm, 15V
43ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IGD06N60TATMA1
Infineon Technologies

IGBT 600V 12A 88W TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 200µJ
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 9ns/130ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,832
600V
12A
18A
2.05V @ 15V, 6A
88W
200µJ
Standard
42nC
9ns/130ns
400V, 6A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD03N60RFATMA1
Infineon Technologies

IGBT 600V 6.5A 53.6W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 50µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고4,672
600V
6.5A
7.5A
2.5V @ 15V, 2.5A
53.6W
50µJ (on), 40µJ (off)
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
31ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKQ100N60TXKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고7,224
600V
160A
400A
2V @ 15V, 100A
714W
3.1mJ (on), 2.5mJ (off)
Standard
610nC
30ns/290ns
400V, 100A, 3.6 Ohm, 15V
230ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
AUIRGF65A40D0
Infineon Technologies

DISCRETES

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고7,520
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD
AUIRGP65A40D0
Infineon Technologies

DISCRETES

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고8,724
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247AC
hot IRGP30B120KD-EP
Infineon Technologies

IGBT 1200V 60A 300W TO247AD

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
  • Power - Max: 300W
  • Switching Energy: 1.07mJ (on), 1.49mJ (off)
  • Input Type: Standard
  • Gate Charge: 169nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 25A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 300ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고16,272
1200V
60A
120A
4V @ 15V, 60A
300W
1.07mJ (on), 1.49mJ (off)
Standard
169nC
-
600V, 25A, 5 Ohm, 15V
300ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRGP4069D-EPBF
Infineon Technologies

IGBT 600V 76A 268W TO247AD

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 76A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 35A
  • Power - Max: 268W
  • Switching Energy: 390µJ (on), 632µJ (off)
  • Input Type: Standard
  • Gate Charge: 104nC
  • Td (on/off) @ 25°C: 46ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 120ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고6,848
600V
76A
105A
1.85V @ 15V, 35A
268W
390µJ (on), 632µJ (off)
Standard
104nC
46ns/105ns
400V, 35A, 10 Ohm, 15V
120ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4PC50KDPBF
Infineon Technologies

IGBT 600V 52A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 52A
  • Current - Collector Pulsed (Icm): 104A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
  • Power - Max: 200W
  • Switching Energy: 1.61mJ (on), 840µJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 63ns/150ns
  • Test Condition: 480V, 30A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고27,672
600V
52A
104A
2.2V @ 15V, 30A
200W
1.61mJ (on), 840µJ (off)
Standard
200nC
63ns/150ns
480V, 30A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKW25T120FKSA1
Infineon Technologies

IGBT 1200V 50A 190W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: 190W
  • Switching Energy: 4.2mJ
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 50ns/560ns
  • Test Condition: 600V, 25A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,152
1200V
50A
75A
2.2V @ 15V, 25A
190W
4.2mJ
Standard
155nC
50ns/560ns
600V, 25A, 22 Ohm, 15V
200ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
AUIRG4PC40S-E
Infineon Technologies

IGBT 600V 60A 160W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
  • Power - Max: 160W
  • Switching Energy: 450µJ (on), 6.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 22ns/650ns
  • Test Condition: 480V, 31A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고8,268
600V
60A
120A
1.5V @ 15V, 31A
160W
450µJ (on), 6.5mJ (off)
Standard
150nC
22ns/650ns
480V, 31A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKW75N65ES5XKSA1
Infineon Technologies

IGBT 650V 75A FAST DIODE TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
  • Power - Max: 395W
  • Switching Energy: 2.4mJ (on), 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 164nC
  • Td (on/off) @ 25°C: 40ns/144ns
  • Test Condition: 400V, 75A, 18 Ohm, 15V
  • Reverse Recovery Time (trr): 85ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고6,432
650V
80A
300A
1.75V @ 15V, 75A
395W
2.4mJ (on), 950µJ (off)
Standard
164nC
40ns/144ns
400V, 75A, 18 Ohm, 15V
85ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IHW40N135R3FKSA1
Infineon Technologies

IGBT 1350V 80A 429W TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
  • Power - Max: 429W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 365nC
  • Td (on/off) @ 25°C: -/343ns
  • Test Condition: 600V, 40A, 7.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
패키지: TO-247-3
재고7,440
1350V
80A
120A
1.85V @ 15V, 40A
429W
2.5mJ (off)
Standard
365nC
-/343ns
600V, 40A, 7.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3