페이지 34 - Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 813
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Infineon Technologies 제품 - 트랜지스터 - IGBT - 단일

기록 1,429
페이지  34/52
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRGPC50F
Infineon Technologies

IGBT FAST 600V 70A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 39A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고189,600
600V
70A
-
1.7V @ 15V, 39A
200W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGPF50F
Infineon Technologies

IGBT FAST 900V 51A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,496
900V
51A
-
2.7V @ 15V, 28A
200W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGBC20FD2
Infineon Technologies

IGBT W/DIODE 600V 16A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고14,820
600V
16A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-220-3
TO-220AB
IRGBC30UD2
Infineon Technologies

IGBT W/DIODE 600V 23A TO-220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: TO-220-3
재고3,456
600V
23A
-
3V @ 15V, 12A
100W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGPC40UD2
Infineon Technologies

IGBT W/DIODE 600V 40A TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고3,504
600V
40A
-
3V @ 15V, 20A
160W
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG8CH184K10F
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 1110nC
  • Td (on/off) @ 25°C: 135ns/640ns
  • Test Condition: 600V, 200A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고4,176
1200V
200A
-
2V @ 15V, 200A
-
-
Standard
1110nC
135ns/640ns
600V, 200A, 2 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG8CH137K10F
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 820nC
  • Td (on/off) @ 25°C: 115ns/570ns
  • Test Condition: 600V, 150A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,128
1200V
150A
-
2V @ 15V, 150A
-
-
Standard
820nC
115ns/570ns
600V, 150A, 2 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG8P60N120KDPBF
Infineon Technologies

IGBT 1200V 100A 420W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 420W
  • Switching Energy: 2.8mJ (on), 2.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 345nC
  • Td (on/off) @ 25°C: 40ns/240ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 210ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고6,256
1200V
100A
120A
2V @ 15V, 40A
420W
2.8mJ (on), 2.3mJ (off)
Standard
345nC
40ns/240ns
600V, 40A, 5 Ohm, 15V
210ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKY75N120CH3XKSA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,208
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7PSH54K10DPBF
Infineon Technologies

IGBT 1200V 120A 520W TO274AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 120A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Power - Max: 520W
  • Switching Energy: 4.8mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 435nC
  • Td (on/off) @ 25°C: 110ns/490ns
  • Test Condition: 600V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
패키지: TO-247-3
재고7,088
1200V
120A
200A
2.4V @ 15V, 50A
520W
4.8mJ (on), 2.8mJ (off)
Standard
435nC
110ns/490ns
600V, 50A, 5 Ohm, 15V
170ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
IKQ75N120CT2XKSA1
Infineon Technologies

IGBT HS SW 1200V 75A TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 938W
  • Switching Energy: 6.7mJ (on), 4.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 37ns/328ns
  • Test Condition: 600V, 75A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고3,408
1200V
150A
300A
2.15V @ 15V, 75A
938W
6.7mJ (on), 4.1mJ (off)
Standard
370nC
37ns/328ns
600V, 75A, 6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IKQ75N120CH3XKSA1
Infineon Technologies

IGBT HS SW 1200V 75A TO-247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Power - Max: 938W
  • Switching Energy: 6.4mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 370nC
  • Td (on/off) @ 25°C: 34ns/282ns
  • Test Condition: 600V, 75A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고2,704
1200V
150A
300A
2.35V @ 15V, 75A
938W
6.4mJ (on), 2.8mJ (off)
Standard
370nC
34ns/282ns
600V, 75A, 6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
AUIRGP4066D1-E
Infineon Technologies

IGBT 600V 140A 454W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 4.24mJ (on), 2.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고7,376
600V
140A
225A
2.1V @ 15V, 75A
454W
4.24mJ (on), 2.17mJ (off)
Standard
225nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
AUIRGP4066D1
Infineon Technologies

IGBT 600V 140A 454W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 4.24mJ (on), 2.17mJ (off)
  • Input Type: Standard
  • Gate Charge: 225nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 240ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고4,928
600V
140A
225A
2.1V @ 15V, 75A
454W
4.24mJ (on), 2.17mJ (off)
Standard
225nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
240ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRGC4067B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 240nC
  • Td (on/off) @ 25°C: 50ns/160ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고7,696
600V
-
-
2.05V @ 15V, 120A
-
-
Standard
240nC
50ns/160ns
400V, 120A, 4.7 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKQ120N60TAXKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 480A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
  • Power - Max: 833W
  • Switching Energy: 4.1mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 772nC
  • Td (on/off) @ 25°C: 33ns/310ns
  • Test Condition: 400V, 120A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 280ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고6,912
600V
160A
480A
2V @ 15V, 120A
833W
4.1mJ (on), 2.8mJ (off)
Standard
772nC
33ns/310ns
400V, 120A, 3 Ohm, 15V
280ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
AUIRGPS4070D0
Infineon Technologies

IGBT 700V SUPER TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,096
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG8CH97K10F
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 600nC
  • Td (on/off) @ 25°C: 100ns/230ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고6,448
1200V
-
-
2V @ 15V, 100A
-
-
Standard
600nC
100ns/230ns
600V, 100A, 1 Ohm, 15V
-
-
Surface Mount
Die
Die
AIKQ120N60CTXKSA1
Infineon Technologies

IC DISCRETE 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 480A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
  • Power - Max: 833W
  • Switching Energy: 4.1mJ (on), 2.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 772nC
  • Td (on/off) @ 25°C: 33ns/310ns
  • Test Condition: 400V, 120A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고7,664
600V
160A
480A
2V @ 15V, 120A
833W
4.1mJ (on), 2.8mJ (off)
Standard
772nC
33ns/310ns
400V, 120A, 3 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
AUIRGP4063D-E
Infineon Technologies

IGBT 600V 96A 330W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고4,032
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKY50N120CH3XKSA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,800
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IKQ100N60TAXKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): 225ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고2,352
600V
160A
400A
2V @ 15V, 100A
714W
3.1mJ (on), 2.5mJ (off)
Standard
610nC
30ns/290ns
400V, 100A, 3.6 Ohm, 15V
225ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IRGP4790D-EPBF
Infineon Technologies

IGBT 650V TO-247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 455W
  • Switching Energy: 2.5mJ (on), 2.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
패키지: TO-247-3
재고3,440
650V
140A
225A
2V @ 15V, 75A
455W
2.5mJ (on), 2.2mJ (off)
Standard
210nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
IKQ50N120CT2XKSA1
Infineon Technologies

IGBT HS SW 1200V 50A TO-247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
  • Power - Max: 652W
  • Switching Energy: 3.8mJ (on), 3.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 34ns/312ns
  • Test Condition: 400V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고6,704
1200V
100A
200A
2.15V @ 15V, 50A
652W
3.8mJ (on), 3.3mJ (off)
Standard
235nC
34ns/312ns
400V, 50A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IKQ50N120CH3XKSA1
Infineon Technologies

IGBT HS SW 1200V 50A TO-247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
  • Power - Max: 652W
  • Switching Energy: 3mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 34ns/297ns
  • Test Condition: 600V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고5,584
1200V
100A
200A
2.35V @ 15V, 50A
652W
3mJ (on), 1.9mJ (off)
Standard
235nC
34ns/297ns
600V, 50A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
AIKQ100N60CTXKSA1
Infineon Technologies

IC DISCRETE 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
패키지: TO-247-3
재고7,312
600V
160A
400A
2V @ 15V, 100A
714W
3.1mJ (on), 2.5mJ (off)
Standard
610nC
30ns/290ns
400V, 100A, 3.6 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
hot AUIRGP4063D
Infineon Technologies

IGBT 600V 96A 330W TO-247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 144A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
  • Power - Max: 330W
  • Switching Energy: 625µJ (on), 1.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 60ns/145ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 115ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
패키지: TO-247-3
재고13,356
600V
100A
144A
1.9V @ 15V, 48A
330W
625µJ (on), 1.28mJ (off)
Standard
140nC
60ns/145ns
400V, 48A, 10 Ohm, 15V
115ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IRG8CH76K10F
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 480nC
  • Td (on/off) @ 25°C: 80ns/210ns
  • Test Condition: 600V, 75A, 1.5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고7,952
1200V
75A
-
2V @ 15V, 75A
-
-
Standard
480nC
80ns/210ns
600V, 75A, 1.5 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die