페이지 11 - Infineon Technologies 제품 - PMIC - 게이트 구동기 | Heisener Electronics
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Infineon Technologies 제품 - PMIC - 게이트 구동기

기록 986
페이지  11/36
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRS2117STRPBF
Infineon Technologies

IC DRIVER SGL CHAN 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 75ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고117,240
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
6V, 9.5V
290mA, 600mA
Non-Inverting
600V
75ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IR7184STRPBF
Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 700V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC
재고4,384
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
1.9A, 2.3A
Non-Inverting
700V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC
IR25603STRPBF
Infineon Technologies

IC HALF BRIDGE SELF OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 180mA, 260mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 45ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,176
Synchronous
2
N-Channel MOSFET
10 V ~ 15.6 V
-
180mA, 260mA
RC Input Circuit
600V
80ns, 45ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IRS2153DSTRPBF
Infineon Technologies

IC DVR HALF BRIDG SELF OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 15.4 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 180mA, 260mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 120ns, 50ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고23,976
Synchronous
2
N-Channel MOSFET
10 V ~ 15.4 V
-
180mA, 260mA
RC Input Circuit
600V
120ns, 50ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2EDN8524RXUMA1
Infineon Technologies

IC GATE DRVR 8TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 1.9V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-TSSOP-8
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고7,968
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
1.2V, 1.9V
5A, 5A
Non-Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
PG-TSSOP-8
2EDN7524FXTMA1
Infineon Technologies

IC GATE DRVR 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-60
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,096
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
-
5A, 5A
Non-Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8-60
2EDN7524RXUMA1
Infineon Technologies

IC GATE DRVR 8TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-TSSLP-8
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고5,424
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
-
5A, 5A
Non-Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
PG-TSSLP-8
2EDN8524FXTMA1
Infineon Technologies

IC GATE DRVR 8DSO

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 1.9V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,832
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
1.2V, 1.9V
5A, 5A
Non-Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
2EDN7523FXTMA1
Infineon Technologies

IC GATE DRVR 8DSO

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,264
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
-
5A, 5A
Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
PG-DSO-8
2EDN8523RXUMA1
Infineon Technologies

IC GATE DRVR 8TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 1.9V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-TSSOP-8
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고2,448
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
1.2V, 1.9V
5A, 5A
Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
PG-TSSOP-8
2EDN7523RXUMA1
Infineon Technologies

IC GATE DRVR 8TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5.3ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: PG-TSSOP-8
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고6,848
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
-
5A, 5A
Inverting
-
5.3ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
PG-TSSOP-8
2EDN7424RXUMA1
Infineon Technologies

IC GATE DRIVER 8TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.3V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 6.4ns, 5.4ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: PG-TSSOP-8
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
재고4,240
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
0.8V, 2.3V
4A, 4A
Non-Inverting
-
6.4ns, 5.4ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
PG-TSSOP-8
IRS2005MTRPBF
Infineon Technologies

IC GATE DRVR HALF-BRIDGE 14MLPQ

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 70ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-VFQFN Exposed Pad
  • Supplier Device Package: 14-MLPQ (4x4)
패키지: 14-VFQFN Exposed Pad
재고4,320
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200V
70ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
14-VFQFN Exposed Pad
14-MLPQ (4x4)
hot IR25606STRPBF
Infineon Technologies

IC HALF BRIDGE DRIVER 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고18,324
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2EDL05N06PFXUMA1
Infineon Technologies

IC DRIVER GATE HALF BRIDGE 8DSO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.1V, 1.7V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 48ns, 24ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-DSO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,640
Independent
2
IGBT, N-Channel, P-Channel MOSFET
10 V ~ 20 V
1.1V, 1.7V
-
Non-Inverting
600V
48ns, 24ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-DSO
IR7106STRPBF
Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 700V
  • Rise / Fall Time (Typ): 150ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,720
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
700V
150ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2101STRPBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 210mA, 360mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고399,348
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3V
210mA, 360mA
Non-Inverting
600V
100ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR4427STRPBF
Infineon Technologies

IC DRIVER DUAL LOW SIDE 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 6 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 2.3A, 3.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고407,820
Independent
2
IGBT, N-Channel MOSFET
6 V ~ 20 V
0.8V, 2.7V
2.3A, 3.3A
Non-Inverting
-
15ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2103STRPBF
Infineon Technologies

IC DRIVER HALF BRIDGE 600V 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 210mA, 360mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 100ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,754,116
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3V
210mA, 360mA
Inverting, Non-Inverting
600V
100ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IRS2304STRPBF
Infineon Technologies

IC DVR HALF BRIDGE HV HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.3V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고676,380
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.3V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR1167ASTRPBF
Infineon Technologies

IC SMART SECONDARY DRIVER 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 18 V
  • Logic Voltage - VIL, VIH: 2V, 2.15V
  • Current - Peak Output (Source, Sink): 2A, 7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 10ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고15,636
Single
1
N-Channel MOSFET
12 V ~ 18 V
2V, 2.15V
2A, 7A
Non-Inverting
-
18ns, 10ns
-25°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IR44273LTRPBF
Infineon Technologies

IC GATE DRVR LOW SIDE SOT23-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.7V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
패키지: SC-74A, SOT-753
재고5,200
Single
1
IGBT, N-Channel MOSFET
5 V ~ 20 V
0.6V, 2.7V
1.5A, 1.5A
Non-Inverting
-
10ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
SC-74A, SOT-753
SOT-23-5
IR7304STRPBF
Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.3V
  • Current - Peak Output (Source, Sink): 60mA, 130mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 700V
  • Rise / Fall Time (Typ): 200ns, 100ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,248
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.3V
60mA, 130mA
Non-Inverting
700V
200ns, 100ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot CHL8550CRT
Infineon Technologies

IC GATE DRVR HI/LOW SIDE 10DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 1V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 35V
  • Rise / Fall Time (Typ): 10ns, 8ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
패키지: 10-VFDFN Exposed Pad
재고43,620
Synchronous
2
N-Channel MOSFET
4.5 V ~ 5.5 V
0.8V, 1V
2A, 2A
Non-Inverting
35V
10ns, 8ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
hot IR25601STRPBF
Infineon Technologies

IC HALF BRIDGE DRIVER 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.3V
  • Current - Peak Output (Source, Sink): 60mA, 130mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 200ns, 100ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고32,796
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.3V
60mA, 130mA
Non-Inverting
600V
200ns, 100ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
1EDN7512BXTSA1
Infineon Technologies

IC GATE DVR LOW SIDE 1CH SOT23-5

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 6.5ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: PG-SOT23-5-1
패키지: SC-74A, SOT-753
재고6,384
Single
1
N-Channel MOSFET
4.5 V ~ 20 V
-
4A, 8A
Inverting, Non-Inverting
-
6.5ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
SC-74A, SOT-753
PG-SOT23-5-1
1EDN7512GXTMA1
Infineon Technologies

IC GATE DVR LOW SIDE 1CH 6WSOP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 6.5ns, 4.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: PG-WSON-6-1
패키지: 6-WDFN Exposed Pad
재고4,400
Single
1
N-Channel MOSFET
4.5 V ~ 20 V
-
4A, 8A
Inverting, Non-Inverting
-
6.5ns, 4.5ns
-40°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
PG-WSON-6-1
hot IR3537MTRPBF
Infineon Technologies

IC MOSFET GATE DRIVER 10DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
패키지: 10-VDFN Exposed Pad
재고28,548
Synchronous
2
N-Channel MOSFET
4.5 V ~ 13.2 V
-
3A, 4A
Non-Inverting
-
-
0°C ~ 125°C (TJ)
Surface Mount
10-VDFN Exposed Pad
10-DFN (3x3)