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부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
패키지: 28-DIP (0.600", 15.24mm) |
재고5,136 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Through Hole | 28-DIP (0.600", 15.24mm) | 28-DIP |
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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC
|
패키지: 44-LCC (J-Lead), 32 Leads |
재고556,164 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRIVER BRIDGE 3-PHASE 44-PLCC
|
패키지: 44-LCC (J-Lead), 32 Leads |
재고4,032 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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Infineon Technologies |
IC DRIVER 3-PHASE 44-PLCC
|
패키지: 44-LCC (J-Lead), 32 Leads |
재고5,280 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
||
Infineon Technologies |
IC DRIVER 3PHASE 600V 28SOIC
|
패키지: 28-SOIC (0.295", 7.50mm Width) |
재고6,336 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 200mA, 350mA | Inverting | 600V | 125ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
||
Infineon Technologies |
IC DVR HALF BRIDGE 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고228,000 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC DRIVER HI/LO SIDE 500V 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고7,788 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 500V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고9,816 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고5,360 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC MOSFET DRIVER CUR-SENSE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고4,544 |
|
Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고47,364 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고7,328 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고18,624 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고7,760 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 14-SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고157,872 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
||
Infineon Technologies |
IC DVR FULL BRDG SELF OSC 14SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고34,740 |
|
Synchronous | 4 | N-Channel MOSFET | 10 V ~ 15.6 V | 4.7V, 9.3V | 180mA, 260mA | RC Input Circuit | 600V | 120ns, 50ns | -25°C ~ 125°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Infineon Technologies |
IC DRIVER HI/LOW SIDE 16-SOIC
|
패키지: 16-SOIC (0.295", 7.50mm Width) |
재고8,340 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 290mA, 600mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고380,736 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고238,104 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,160 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 8.3V, 12.6V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC
|
패키지: 44-LCC (J-Lead), 32 Leads |
재고7,632 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
||
Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 28SOIC
|
패키지: 28-SOIC (0.295", 7.50mm Width) |
재고6,208 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2V | 250mA, 500mA | Inverting | 1200V | 90ns, 40ns | 125°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
||
Infineon Technologies |
IC DVR HALF BRIDGE 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고5,184 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고24,060 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Infineon Technologies |
IC DRIVER HALF BRIDGE 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고9,780 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고6,096 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER 600V 200/420MA 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고33,420 |
|
Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고10,260 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |