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Infineon Technologies 제품

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hot IRG4IBC30KDPBF
Infineon Technologies

IGBT 600V 17A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 17A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 45W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
패키지: TO-220-3 Full Pack
재고54,000
AUIRFS4010
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고5,168
IRF3707ZCSTRR
Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.25V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고6,816
hot IRF1404L
Infineon Technologies

MOSFET N-CH 40V 162A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고108,408
hot IRF9310TRPBF
Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고334,548
SIDC42D120F6
Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 50A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 2.1V @ 50A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: Die
재고6,960
IFX25001ME V33
Infineon Technologies

IC REG LIN 3.3V 400MA SOT223-4

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 1.2V @ 300mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 220µA ~ 30mA
  • PSRR: 60dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고26,298
BTS5482SFXUMA2
Infineon Technologies

IC PWR SWITCH HISIDE PG-DSO-36

  • Switch Type: General Purpose
  • Number of Outputs: 4
  • Ratio - Input:Output: 3:4
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: SPI
  • Voltage - Load: 4.5 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Current - Output (Max): -
  • Rds On (Typ): 4 mOhm, 15 mOhm
  • Input Type: -
  • Features: Slew Rate Controlled
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 36-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-36-43
패키지: 36-BSSOP (0.295", 7.50mm Width)
재고7,968
ADM6999GA2T1
Infineon Technologies

IC SWITCH CTRLR 10/100 128-FQFP

  • Protocol: -
  • Function: -
  • Interface: -
  • Standards: -
  • Voltage - Supply: 2.8 V ~ 3.465 V
  • Current - Supply: -
  • Operating Temperature: 0°C ~ 115°C
  • Package / Case: 128-BFQFP
  • Supplier Device Package: PG-BFQFP-128
패키지: 128-BFQFP
재고4,880
SAK-XE164GN-24F80L AA
Infineon Technologies

IC MCU 16BIT 192KB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 75
  • Program Memory Size: 192KB (192K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 26K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 11x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
패키지: 100-LQFP Exposed Pad
재고4,320
XC2268I136F128LAAKXUMA1
Infineon Technologies

IC MCU 16BIT 1MB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 128MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: DMA, I2S, POR, PWM, WDT
  • Number of I/O: 76
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 90K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
패키지: 100-LQFP Exposed Pad
재고6,096
TLE4274GSV25NT
Infineon Technologies

IC REG LIN 2.5V 400MA SOT223-4

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 2.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 2V @ 300mA
  • Current - Output: 400mA
  • Current - Quiescent (Iq): 220µA
  • Current - Supply (Max): 30mA
  • PSRR: 60dB (100Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
패키지: TO-261-4, TO-261AA
재고3,584
FS380R12A6T4BBPSA1
Infineon Technologies

IGBT MODULE 1200V 380A

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 380 A
  • Power - Max: 870 W
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 250A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2
패키지: -
Request a Quote
S99FL064LABMFI010
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
CY8C4149AZSS568XQLA1
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 84
  • Program Memory Size: 384KB (384K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 32K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: -
Request a Quote
CY95F636KNWQN-G-UNE1
Infineon Technologies

IC MCU 8BIT 36KB FLASH 24BGA

  • Core Processor: F²MC-8FX
  • Core Size: 8-Bit
  • Speed: 16.25MHz
  • Connectivity: I2C, LINbus, SIO, UART/USART
  • Peripherals: LVD, POR, PWM, WDT
  • Number of I/O: 25
  • Program Memory Size: 36KB (36K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1K x 8
  • Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
  • Data Converters: A/D 8x8/10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: -
재고14,700
S27KL0642GABHV020
Infineon Technologies

IC PSRAM 64MBIT HYPERBUS 24FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 64Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
Request a Quote
S26HS512TGABHM000
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 5.45 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
Request a Quote
CY9AFA41LAPMC-G-JNE2
Infineon Technologies

MULTI-MARKET MCUS

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
  • Peripherals: DMA, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 51
  • Program Memory Size: 96KB (96K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 12x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (12x12)
패키지: -
Request a Quote
T2160N22TOFVTXPSA1
Infineon Technologies

SCR MODULE 2800V 4600A DO200AE

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 2.8 kV
  • Current - On State (It (AV)) (Max): 2400 A
  • Current - On State (It (RMS)) (Max): 4600 A
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
패키지: -
Request a Quote
S99GL256S0150
Infineon Technologies

IC MEMORY FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
SLE-66C168PE-MFC5-8
Infineon Technologies

IC SECURITY CTRLR 8/16BIT MFC5.8

  • Applications: -
  • Core Processor: -
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: -
  • Number of I/O: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: S-MFC5.8-8-1
  • Supplier Device Package: S-MFC5.8-8
패키지: -
Request a Quote
IRF7555TR
Infineon Technologies

MOSFET 2P-CH 20V 4.3A MICRO8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
  • Power - Max: 1.25W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: Micro8™
패키지: -
Request a Quote
FF450R12ME4BOSA1
Infineon Technologies

IGBT MOD 1200V 675A 2250W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 675 A
  • Power - Max: 2250 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고3
CY8C614AAZI-S2F44
Infineon Technologies

IC MCU 32BIT 2MB FLASH 128TQFP

  • Core Processor: ARM® Cortex®-M4F
  • Core Size: 32-Bit
  • Speed: 150MHz
  • Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
  • Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
  • Number of I/O: 102
  • Program Memory Size: 2MB (2M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1M x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
패키지: -
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S29GL064S90TFI013
Infineon Technologies

IC FLASH 64MBIT PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 90 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: -
Request a Quote
IPA037N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 75A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 155µA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8110 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고1,008
IPTG014N10NM5ATMA1
Infineon Technologies

MOSFET N-CH 100V 37A/366A HSOG-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 366A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOG-8-1
  • Package / Case: 8-PowerSMD, Gull Wing
패키지: -
재고2,289