Infineon Technologies 제품

IRGS4065PBF

Infineon Technologies

IGBT 300V 70A 178W D2PAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
• Power - Max: 178W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 30ns/170ns
• Test Condition: 180V, 25A, 10 Ohm
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7815PBF

Infineon Technologies

MOSFET N-CH 150V 5.1A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1647pF @ 75V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IPB03N03LA G

Infineon Technologies

MOSFET N-CH 25V 80A TO-263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 7027pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 55A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFU3707

Infineon Technologies

MOSFET N-CH 30V 61A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: IPAK (TO-251)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

IRLBA3803P

Infineon Technologies

MOSFET N-CH 30V 179A SUPER-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 71A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: SUPER-220? (TO-273AA)
• Package / Case: Super-220?-3 (Straight Leads)

패키지: Super-220?-3 (Straight Leads)

94-2386

Infineon Technologies

MOSFET N-CH 55V 49A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
• Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BCP51E6327HTSA1

Infineon Technologies

TRANS PNP 45V 1A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 125MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

BCV48H6327XTSA1

Infineon Technologies

TRANSISTOR AF SOT89-3

• Transistor Type: PNP - Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

패키지: TO-243AA

MMBTA42LT1HTSA1

Infineon Technologies

TRANS NPN 300V 0.5A SOT-23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 300V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 360mW
• Frequency - Transition: 70MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

TLE7257LEXUMA1

Infineon Technologies

IC TXRX LIN MASTER NODE 8TSON

• Type: Transceiver
• Protocol: LIN
• Number of Drivers/Receivers: 1/1
• Duplex: -
• Receiver Hysteresis: 500mV
• Data Rate: 20kbps
• Voltage - Supply: 5.5 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN Exposed Pad
• Supplier Device Package: PG-TSON-8

패키지: 8-TDFN Exposed Pad

XC866L4FRA5VBELXUMA1

Infineon Technologies

IC MCU 8BIT 16KB FLASH 38TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 25MHz
• Connectivity: LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 768 x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 150°C (TA)
• Mounting Type: -
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: -

패키지: 38-TFSOP (0.173", 4.40mm Width)

XE164FM48F80LAAKXUMA1

Infineon Technologies

IC MCU 16BIT 384KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 34K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

패키지: 100-LQFP Exposed Pad

SLE 7737E M3.2

Infineon Technologies

IC EEPROM COUNTER 237BIT M3.2-6

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: M3.2 Chip Card Module
• Supplier Device Package: M3.2 Chip Card Module

패키지: M3.2 Chip Card Module

SLE 66C82P M5.1

Infineon Technologies

IC SECURITY CTRLR 16BIT M5.1

• Applications: Security
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: M5.1 Chip Card Module
• Supplier Device Package: T-M5.1-9

패키지: M5.1 Chip Card Module

SLF9620M51XHSA1

Infineon Technologies

IC SECURITY CHIP CARD CTLR SMD

• Applications: -
• Core Processor: -
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: -
• Number of I/O: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE4983CHTE6847HAMA1

Infineon Technologies

SPEED SENSORS

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE4926CHTNE6547HAMA1

Infineon Technologies

IC SPEED SENSOR MAGN PG-SSO-3

• Type: -
• Technology: -
• Axis: -
• Output Type: -
• Sensing Range: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Resolution: -
• Bandwidth: -
• Operating Temperature: -
• Features: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TDA5210T

Infineon Technologies

IC ASK/FSK RECEIVER P-TSSOP-28

• Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
• Sensitivity: -107dBm
• Data Rate (Max): -
• Modulation or Protocol: ASK, FSK
• Applications: Alarm Systems, Communication Systems
• Current - Receiving: 4.8mA
• Data Interface: PCB, Surface Mount
• Memory Size: -
• Antenna Connector: PCB, Surface Mount
• Features: -
• Voltage - Supply: 4.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: PG-TSSOP-28

패키지: 28-TSSOP (0.173", 4.40mm Width)

IR3570AMGB12TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-VQFN (5x5)

패키지: 40-VFQFN Exposed Pad

TLE62582GNTMA1

Infineon Technologies

IC TXRX LIN PG-DSO8

• Type: -
• Protocol: -
• Number of Drivers/Receivers: -
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IPB60R299CPATMA1

Infineon Technologies

MOSFET N-CH 600V 11A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

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CY8C4127AZS-M485

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16, 20x10/12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

패키지: -

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XMC7200-E272K8384AA

Infineon Technologies

INDUSTRIAL MCUS

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 350MHz
• Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 191
• Program Memory Size: 8.188MB (8.188M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 96x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 272-LFBGA
• Supplier Device Package: 272-BGA (16x16)

패키지: -

TLS4125D0EPVXUMA1

Infineon Technologies

IC REG BUCK ADJ 2.5A TSDSO-14-5

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3.7V
• Voltage - Input (Max): 35V
• Voltage - Output (Min/Fixed): 3V
• Voltage - Output (Max): 10V
• Current - Output: 2.5A
• Frequency - Switching: 2.8MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
• Supplier Device Package: PG-TSDSO-14-5

패키지: -

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IKW50N60TFKSA1

Infineon Technologies

IGBT TRENCH FS 600V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
• Power - Max: 333 W
• Switching Energy: 2.6mJ
• Input Type: Standard
• Gate Charge: 310 nC
• Td (on/off) @ 25°C: 26ns/299ns
• Test Condition: 400V, 50A, 7Ohm, 15V
• Reverse Recovery Time (trr): 143 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

패키지: -

IQE008N03LM5CGATMA1

Infineon Technologies

TRENCH <= 40V PG-TTFN-9

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Supplier Device Package: PG-TTFN-9-1
• Package / Case: 8-PowerTDFN

패키지: -

CY8C4127LCE-HV4230AT

Infineon Technologies

PSOC BASED - HV FAMILY

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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E3203006443

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote