Infineon Technologies 제품

IKW60N60H3FKSA1

Infineon Technologies

IGBT 600V 80A 305W PG-TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 180A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
• Power - Max: 416W
• Switching Energy: 2.1mJ (on), 1.13mJ (off)
• Input Type: Standard
• Gate Charge: 375nC
• Td (on/off) @ 25°C: 27ns/252ns
• Test Condition: 400V, 60A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 143ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

BSO4822T

Infineon Technologies

MOSFET N-CH 30V 12.7A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 55µA
• Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 12.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IPC60R125CPX1SA4

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

IRLR7821TRLPBF

Infineon Technologies

MOSFET N-CH 30V 65A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IPA65R280E6

Infineon Technologies

MOSFET N-CH 650V 13.8A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 440µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 32W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-FP
• Package / Case: TO-220-3 Full Pack

패키지: TO-220-3 Full Pack

IRFS52N15DTRLP

Infineon Technologies

MOSFET N-CH 150V 51A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 230W (Tc)
• Rds On (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFS38N20DPBF

Infineon Technologies

MOSFET N-CH 200V 43A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
• Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPW90R120C3

Infineon Technologies

MOSFET N-CH 900V 36A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

패키지: TO-247-3

IPLU300N04S4R8XTMA1

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 287nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 22945pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 429W (Tc)
• Rds On (Max) @ Id, Vgs: 0.77 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: H-PSOF-8-1
• Package / Case: 8-PowerSFN

패키지: 8-PowerSFN

IRF7389

Infineon Technologies

MOSFET N/P-CH 30V 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
• Power - Max: 2.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

BC849CWE6327HTSA1

Infineon Technologies

TRANS NPN 30V 0.1A SOT-323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

BB664H7902XTSA1

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD80

• Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
• Capacitance Ratio: 17.8
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

패키지: SC-80

IRU1117-33CYTR

Infineon Technologies

IC REG LINEAR 3.3V 800MA SOT223

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 800mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

TLE4296GV33HTSA1

Infineon Technologies

IC REG LINEAR 3.3V 30MA SCT595-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.3V @ 20mA
• Current - Output: 30mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 170µA ~ 5.2mA
• PSRR: 60dB (100Hz)
• Control Features: Inhibit
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (5 Leads), Gull Wing
• Supplier Device Package: PG-SCT595-5

패키지: 6-SMD (5 Leads), Gull Wing

BTS142DATMA1

Infineon Technologies

IC PWR SWITCH 42V 4.6A TO252

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 42V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 4.6A
• Rds On (Typ): 23 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IR21074

Infineon Technologies

IC DRIVER HIGH/LOW DRIVER 14-DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: 14-DIP

패키지: 14-DIP (0.300", 7.62mm)

PEF 22558 E V1.1-G

Infineon Technologies

IC LIU E1/T1/J1 256LBGA

• Function: Framer, Line Interface Unit (LIU)
• Interface: E1, J1, SCI, SPI, T1
• Number of Circuits: 8
• Voltage - Supply: 1.8V, 3.3V
• Current - Supply: -
• Power (Watts): 150mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 256-LBGA
• Supplier Device Package: PG-LBGA-256

패키지: 256-LBGA

V23826-K305-C363

Infineon Technologies

TXRX MULT-MODE 850NM 1.3GBIT

• Data Rate: 1.3Gbps
• Wavelength: 850nm
• Applications: Ethernet
• Voltage - Supply: 3.1 V ~ 3.5 V
• Connector Type: SC
• Mounting Type: Through Hole

패키지: -

ESD230B1W0201E6327XTSA1

Infineon Technologies

TVS DIODE 5.5VWM TSSLP2-2

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 6.05V
• Voltage - Clamping (Max) @ Ipp: 14V
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: 56W
• Power Line Protection: -
• Applications: General Purpose
• Capacitance @ Frequency: 7pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 2-XFDFN
• Supplier Device Package: WLL-2-1

패키지: 2-XFDFN

ESD114U102ELE6327XTMA1

Infineon Technologies

TVS DIODE 5.3VWM 28VC TSLP2-19

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.3V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 28V (Typ)
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: HDMI
• Capacitance @ Frequency: 0.4pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: TSLP-2-19

패키지: SOD-882

PTMA210152MV1R500AUMA1

Infineon Technologies

IC AMP RF LDMOS 20W DSO-20

• Frequency: 1.8GHz ~ 2.2GHz
• P1dB: -
• Gain: 28.5dB
• Noise Figure: -
• RF Type: WCDMA
• Voltage - Supply: 28V
• Current - Supply: -
• Test Frequency: 2.11GHz ~ 2.17GHz
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-20-63

패키지: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

S29PL032J60BFI070

Infineon Technologies

IC FLASH 32MBIT PARALLEL 48VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 60 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (8.15x6.15)

패키지: -

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CY9AF131KAPMC-G-105-UNE2

Infineon Technologies

IC MCU 32BIT 64KB FLASH 48LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: CSIO, I2C, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 37
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
• Data Converters: A/D 6x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-LQFP (7x7)

패키지: -

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TLF44773LAXUMA1

Infineon Technologies

OPTIREG LINEAR PG-TSON-14

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TZ800N18KOFB1HPSA2

Infineon Technologies

SCR MODULE 1800V 1500A MODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 819 A
• Current - On State (It (RMS)) (Max): 1500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

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TC297TX128F300NBCKXUMA1

Infineon Technologies

IC MCU 32BIT 8MB FLASH 292LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit Tri-Core
• Speed: 300MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, WDT
• Number of I/O: 263
• Program Memory Size: 8MB (8M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 2.7M x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: A/D 84x12b, 10 x Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-6

패키지: -

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S25FL512SAGBHEA13

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

패키지: -

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CY8C6136BZI-F34T

Infineon Technologies

IC MCU 32BIT 512KB FLSH 124FBGA

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

패키지: -

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