Infineon Technologies 제품

IRGP4262DPBF

Infineon Technologies

IGBT 650V 60A 250W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 520µJ (on), 240µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 24ns/73ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IRGSL10B60KDPBF

Infineon Technologies

IGBT 600V 22A 156W TO220-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 44A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
• Power - Max: 156W
• Switching Energy: 140µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 38nC
• Td (on/off) @ 25°C: 30ns/230ns
• Test Condition: 400V, 10A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 90ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IPD49CN10N G

Infineon Technologies

MOSFET N-CH 100V 20A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 44W (Tc)
• Rds On (Max) @ Id, Vgs: 49 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR3706CTRLPBF

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB70N10S3L12ATMA1

Infineon Technologies

MOSFET N-CH 100V 70A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 83µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPS70R900P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 12.8A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 30.5W (Tc)
• Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251
• Package / Case: TO-251-3 Stub Leads, IPak

패키지: TO-251-3 Stub Leads, IPak

IRLML2402TRPBF

Infineon Technologies

MOSFET N-CH 20V 1.2A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 540mW (Ta)
• Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3?/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

SIDC09D60E6Y

Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 20A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 27µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

IRU1010-25CP

Infineon Technologies

IC REG LINEAR 2.5V 1A 2-UTHINPAK

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 2-Ultra Thin-Pak
• Supplier Device Package: 2-Ultra Thin-Pak

패키지: 2-Ultra Thin-Pak

IR3842AMTR1PBF

Infineon Technologies

IC REG BUCK ADJ 6A SYNC 15QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.5V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.7V
• Voltage - Output (Max): 18.9V
• Current - Output: 6A
• Frequency - Switching: 225kHz ~ 1.32MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 15-PowerVQFN
• Supplier Device Package: PQFN (5x6)

패키지: 15-PowerVQFN

ICE3B3065PBKSA1

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP TO220

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 15V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 128W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: TO-220-6 Formed Leads
• Supplier Device Package: PG-TO220-6
• Mounting Type: Through Hole

패키지: TO-220-6 Formed Leads

SVID002

Infineon Technologies

SVID EMULATOR USING CHIL GUI

• Applications: -
• Interface: -
• Voltage - Supply: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

패키지: -

PVI1050

Infineon Technologies

IC ISO PHOTOVOLTC 5/10VOUT 8-DIP

• Number of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (Min): -
• Current Transfer Ratio (Max): -
• Turn On / Turn Off Time (Typ): -
• Rise / Fall Time (Typ): -
• Input Type: DC
• Output Type: Photovoltaic
• Voltage - Output (Max): 5V, 10V
• Current - Output / Channel: -
• Voltage - Forward (Vf) (Typ): -
• Current - DC Forward (If) (Max): -
• Vce Saturation (Max): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm), 6 Leads
• Supplier Device Package: 8-DIP

패키지: 8-DIP (0.300", 7.62mm), 6 Leads

TLE63893GV50NTMA1

Infineon Technologies

IC REG CTRLR BUCK 14DSOP

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

C164SL8R25MCAHXUMA1

Infineon Technologies

IC MCU 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TC212S8F133NACKXUMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 80TQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

CY8C614ABZI-S2F04T

Infineon Technologies

IC MCU 32BIT 2MB FLASH 124VFBGA

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 150MHz
• Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
• Number of I/O: 100
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1M x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

패키지: -

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XDPL8220XUMA1CT

Infineon Technologies

XDPL822 - LED DRIVER DIMMABLE

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IPG20N06S2L65AAUMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A 8TDSON

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2V @ 14µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
• Power - Max: 43W (Tc)
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-10

패키지: -

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PEB3081HV1-4

Infineon Technologies

SBCX-X S/T BUS INTERFACE CIRCUIT

• Function: S / T Bus Interface Transceiver
• Interface: IOM-2, ISDN, SCI
• Number of Circuits: 1
• Voltage - Supply: 3.3V
• Current - Supply: 30mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 44-QFP
• Supplier Device Package: P-MQFP-44

패키지: -

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FP75R12N2T7B11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-711

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A
• Current - Collector Cutoff (Max): 14 µA
• Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

패키지: -

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SIGC54T60R3EX1SA2

Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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CY9AF141NABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 96KB FLASH 112FBGA

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 112-LFBGA
• Supplier Device Package: 112-PFBGA (10x10)

패키지: -

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IRFB4019PBFXKMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 80W (Tj)
• Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: -

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CY8C4146LQE-S263T

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: -

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TZ740N22KS01HPSA3

Infineon Technologies

MOODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 2.2 kV
• Current - On State (It (AV)) (Max): 819 A
• Current - On State (It (RMS)) (Max): 1500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

패키지: -

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CY90F867EPMC-G-90XX-SPE1

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100LQFP

• Core Processor: F²MC-16LX
• Core Size: 16-Bit
• Speed: 24MHz
• Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
• Peripherals: DMA, POR, WDT
• Number of I/O: 80
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 6K x 8
• Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
• Data Converters: A/D 24x8/10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

패키지: -

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MB3800PNF-G-BND-JN-EFE1

Infineon Technologies

IC REG CTRLR BOOST 8SOP

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote