Infineon Technologies 제품

IPP80N06S4L05AKSA2

Infineon Technologies

MOSFET N-CH TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 60µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 107W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

패키지: TO-220-3

IRFR7446PBF

Infineon Technologies

MOSFET N-CH 40V 56A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 98W (Tc)
• Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 56A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP120N06S403AKSA1

Infineon Technologies

MOSFET N-CH 60V 120A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

패키지: TO-220-3

IRF3315

Infineon Technologies

MOSFET N-CH 150V 27A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

IRFP4410ZPBF

Infineon Technologies

MOSFET N-CH 100V 97A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 230W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

패키지: TO-247-3

IPP50R250CPXKSA1

Infineon Technologies

LOW POWER_LEGACY

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

IPD60R385CPATMA1

Infineon Technologies

MOSFET N-CH 600V 9A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 340µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF6201TRPBF

Infineon Technologies

MOSFET N-CH 20V 27A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 8555pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 2.45 mOhm @ 27A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

PTF080101M V1

Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 16dB
• Voltage - Test: 28V
• Current Rating: 1µA
• Noise Figure: -
• Current - Test: 180mA
• Power - Output: 10W
• Voltage - Rated: 65V
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: PG-RFP-10

패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

IRF7106

Infineon Technologies

MOSFET N/P-CH 20V 3A/2.5A 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 1A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

BCX56E6327HTSA1

Infineon Technologies

TRANS NPN 80V 1A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 80V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PG-SOT89

패키지: TO-243AA

BC847SH6827XTSA1

Infineon Technologies

TRANS 2NPN 45V 0.1A SOT363

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

BB659CH7903XTMA1

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD80

• Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
• Capacitance Ratio: 15.3
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

패키지: SC-80

TLE42694GMXUMA1

Infineon Technologies

IC REG LINEAR 5V 150MA 14DSO

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 280µA ~ 8mA
• PSRR: 70dB (100Hz)
• Control Features: Reset
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

패키지: 14-SOIC (0.154", 3.90mm Width)

TLE7272-2E

Infineon Technologies

IC REG LINEAR 5V 300MA 14SSOP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 200mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 30µA ~ 40µA
• PSRR: 60dB (100Hz)
• Control Features: Enable, Reset
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14-EP

패키지: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

BTS50902EKAXUMA1

Infineon Technologies

IC PWR SW HI-SIDE 2CH DSO14-40

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.5A
• Rds On (Typ): 90 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-14-40-EP

패키지: 14-SOIC (0.154", 3.90mm Width) Exposed Pad

IRS21844MTRPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 16MLPQ

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-VFQFN Exposed Pad, 14 Leads
• Supplier Device Package: 16-MLPQ (4x4)

패키지: 16-VFQFN Exposed Pad, 14 Leads

TUA 6036 T

Infineon Technologies

IC MIXER/OSC/PLL DIGITAL TSSOP38

• Type: Tuner
• Applications: NTSC, PAL
• Mounting Type: Surface Mount
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: P-TSSOP-38

패키지: 38-TFSOP (0.173", 4.40mm Width)

TC224L16F133FABKXUMA1

Infineon Technologies

IC MCU 32BIT 1MB FLASH 144TQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: CAN, FlexRay, LIN, QSPI
• Peripherals: DMA, WDT
• Number of I/O: 120
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 96K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

PVT322SPBF

Infineon Technologies

IC RELAY PHOTOVO 250V 8-SMD

• Circuit: DPST (2 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 10 Ohm
• Load Current: 170mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 250 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 8-SMD (0.300", 7.62mm)
• Supplier Device Package: 8-SMT
• Relay Type: Relay

패키지: 8-SMD (0.300", 7.62mm)

TLE9263BQXV33XUMA1

Infineon Technologies

IC SBC 48VQFN

• Applications: Automotive
• Interface: SPI
• Voltage - Supply: 28V
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31
• Mounting Type: Surface Mount

패키지: 48-VFQFN Exposed Pad

FP75R12N2T4B11BPSA2

Infineon Technologies

LOW POWER ECONO AG-ECONO2B-411

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 75 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

패키지: -

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DF900R12IP4DVBOSA1

Infineon Technologies

IGBT MOD 1200V 900A 5100W

• IGBT Type: Trench Field Stop
• Configuration: Single Chopper
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 900 A
• Power - Max: 5100 W
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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ASP1000C-S31T

Infineon Technologies

IC REG BUCK 56VQFN

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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CY8CTMA461LWS-13

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): 32 b
• Interface: I2C, SPI
• Voltage Reference: Internal
• Voltage - Supply: 1.71V ~ 5.5V, 2.65V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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IMBG65R030M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
• Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 234W (Tc)
• Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-12
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

CY8C4127AZA-S455T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16, 20x10/12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

패키지: -

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BTT3018EJXUMA1

Infineon Technologies

BTT3018EJXUMA1

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6V ~ 36V
• Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
• Current - Output (Max): 7A
• Rds On (Typ): 16mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TDSO-8-31

패키지: -