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Infineon Technologies 제품

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BUZ31HXKSA1
Infineon Technologies

MOSFET N-CH 200V 14.5A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 95W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고4,832
hot IRFS7440TRLPBF
Infineon Technologies

MOSFET N CH 40V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,928
IPP072N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4910pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고15,552
BSZ088N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
패키지: 8-PowerTDFN
재고5,552
BSR315PH6327XTSA1
Infineon Technologies

MOSFET P-CH 60V 620MA SC-59-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 160µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 176pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC-59
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고45,456
hot IRF7452TRPBF
Infineon Technologies

MOSFET N-CH 100V 4.5A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: 8-SOIC (0.154", 3.90mm Width)
재고36,000
IRFS3006TRLPBF
Infineon Technologies

MOSFET N-CH 60V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8970pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고31,164
IRFB7546PBF
Infineon Technologies

MOSFET N-CH 60V 75A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 99W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고35,046
SIDC14D120E6
Infineon Technologies

DIODE GEN PURP 1.2KV 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: Die
재고5,328
TLS203B0EJV33XUMA1
Infineon Technologies

IC REG LINEAR 3.3V 300MA 8DSO

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 20V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.4 @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 60µA ~ 12mA
  • PSRR: 65dB (120Hz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Reverse Polarity
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-DSO-8, e-Pad
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,648
IR3622MPBF
Infineon Technologies

IC REG CTRLR BUCK 32MLPQ

  • Output Type: Transistor Driver
  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Number of Outputs: 2
  • Output Phases: 2
  • Voltage - Supply (Vcc/Vdd): 7.5 V ~ 14.5 V
  • Frequency - Switching: 200kHz ~ 600kHz
  • Duty Cycle (Max): 84%
  • Synchronous Rectifier: Yes
  • Clock Sync: Yes
  • Serial Interfaces: -
  • Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-MLPQ (5x5)
패키지: 32-VFQFN Exposed Pad
재고7,552
hot BTS555
Infineon Technologies

IC HISIDE PWR SWTCH TO218AB/5-1

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 34 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 128A
  • Rds On (Typ): 1.9 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-218-5
  • Supplier Device Package: TO-218AB/5
패키지: TO-218-5
재고6,656
BTS410F2E3062ABUMA1
Infineon Technologies

IC HIGH SIDE PWR SWITCH T0263-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.7 V ~ 42 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.6A
  • Rds On (Typ): 190 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: PG-TO263-5-2
패키지: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
재고7,296
AUXDI2117STR
Infineon Technologies

IC DRIVER HIGH SIDE SGL 8SOIC

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,144
hot IR2122
Infineon Technologies

IC MOSFET DRIVER HIGH-SIDE 8-DIP

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 13 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 130mA, 130mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 250ns, 250ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고127,536
1EDI20H12AHXUMA1
Infineon Technologies

IC IGBT DVR 1200V 8DSO

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 13 V ~ 35 V
  • Logic Voltage - VIL, VIH: 1.5V, 3.5V
  • Current - Peak Output (Source, Sink): 4A, 3.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 10ns, 9ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 8-DSO
패키지: 8-SOIC (0.295", 7.50mm Width)
재고7,440
IRSM505-055DA2
Infineon Technologies

IC MOTOR DRIVER 500V 23DIP

  • Output Configuration: Half Bridge (3)
  • Applications: AC Motors
  • Interface: Logic
  • Load Type: Inductive
  • Technology: UMOS
  • Rds On (Typ): 1.3 Ohm
  • Current - Output / Channel: 2.4A
  • Current - Peak Output: 15A
  • Voltage - Supply: 13.5 V ~ 16.5 V
  • Voltage - Load: 400V (Max)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Bootstrap Circuit
  • Fault Protection: UVLO
  • Mounting Type: Through Hole
  • Package / Case: 32-PowerDIP Module, 23 Leads
  • Supplier Device Package: 23-DIP
패키지: 32-PowerDIP Module, 23 Leads
재고2,032
XC87813FFA5VACFXUMA1
Infineon Technologies

IC MCU 8BIT 52KB FLASH 64LQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 27MHz
  • Connectivity: SPI, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 40
  • Program Memory Size: 52KB (52K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 3.25K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
패키지: 64-LQFP
재고5,328
XMC1402F064X0064AAXUMA1
Infineon Technologies

IC MCU 32BIT 64KB FLASH 64LQFP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 48
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 12x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,784
TLV49645TAXBXA1
Infineon Technologies

IC HALL EFFECT SWITCH 3TO92

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,518
RTN7730X1SA1
Infineon Technologies

RF TXRX MODULE

  • RF Family/Standard: -
  • Protocol: -
  • Modulation: -
  • Frequency: -
  • Data Rate: -
  • Power - Output: -
  • Sensitivity: -
  • Serial Interfaces: -
  • Antenna Type: -
  • Memory Size: -
  • Voltage - Supply: -
  • Current - Receiving: -
  • Current - Transmitting: -
  • Mounting Type: -
  • Operating Temperature: -
  • Package / Case: -
패키지: -
재고8,532
IMW120R090M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 26A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
패키지: -
재고1,302
28382564B
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
S26HS512TGABHB003
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 5.45 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
Request a Quote
IKZA40N65RH5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 74A TO247-4

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 74 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 250 W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 95 nC
  • Td (on/off) @ 25°C: 17ns/165ns
  • Test Condition: 400V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4-3
패키지: -
재고51
CYT2B97BACQ0AZEGS
Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 144QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 122
  • Program Memory Size: 2.0625MB (2.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 256K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 72x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: 144-LQFP (20x20)
패키지: -
재고1,800
T570N65TOFXPSA1
Infineon Technologies

SCR MODULE 6500V 850A DO200AC

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 6.5 kV
  • Current - On State (It (AV)) (Max): 760 A
  • Current - On State (It (RMS)) (Max): 850 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 350 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
  • Current - Hold (Ih) (Max): 350 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Clamp On
  • Package / Case: TO-200AC
패키지: -
Request a Quote
PX8847DDQG004XUMA1
Infineon Technologies

LED PX8847DDQG004XUMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote