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Infineon Technologies 제품

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IPU04N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
패키지: TO-251-3 Short Leads, IPak, TO-251AA
재고6,064
BUZ73E3046XK
Infineon Technologies

MOSFET N-CH 200V 7A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
패키지: TO-220-3
재고7,888
hot IRL1004LPBF
Infineon Technologies

MOSFET N-CH 40V 130A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고29,400
BSS119L6433HTMA1
Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고7,840
SIPC05N60C3X1SA1
Infineon Technologies

TRANSISTOR N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고3,408
hot IRF1407PBF
Infineon Technologies

MOSFET N-CH 75V 130A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고18,072
hot IRLP3034PBF
Infineon Technologies

MOSFET N-CH 40V 195A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
패키지: TO-247-3
재고19,728
hot IRF9Z24NPBF
Infineon Technologies

MOSFET P-CH 55V 12A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: TO-220-3
재고595,932
AUIPS71411GTR
Infineon Technologies

IC SW IPS 1CH HIGH SIDE 8SOIC

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 60 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.5A
  • Rds On (Typ): 75 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,448
hot IRS21956SPBF
Infineon Technologies

IC DVR HI SIDE/DUAL LOW 20-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: 20-SOIC (0.295", 7.50mm Width)
재고70,416
hot IR21834STR
Infineon Technologies

IC DRIVER HALFBRIDGE 600V 14SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고38,760
TLV49681TAXBXA1
Infineon Technologies

IC HALL EFFECT SWITCH 3TO92

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,580
BTS740S2NT
Infineon Technologies

IC SWITCH POWER HISIDE DSO-20

  • Switch Type: -
  • Number of Outputs: -
  • Ratio - Input:Output: -
  • Output Configuration: -
  • Output Type: -
  • Interface: -
  • Voltage - Load: -
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,184
SIDC03D60F6X1SA2
Infineon Technologies

DIODE GP 600V 6A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: -
Request a Quote
DD260N12KKHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
F3L8MR12W2M1HPB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V 85A AG-EASY2B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tj)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2B
패키지: -
재고135
DD600N14KHPSA2
Infineon Technologies

DIODE MODULE GP 1.4KV 600A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
FF450R17IE4BOSA2
Infineon Technologies

IGBT MOD 1700V 620A 2800W

  • IGBT Type: -
  • Configuration: 2 Independent
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 620 A
  • Power - Max: 2800 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
2EDN7533BXTSA1
Infineon Technologies

DRIVER IC PG-SOT23-6

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 20V
  • Logic Voltage - VIL, VIH: 1.4V, 1.9V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8.6ns, 6ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: PG-SOT23-6-1
패키지: -
Request a Quote
ISC015N06NM5LFATMA1
Infineon Technologies

OPTIMOSTM5LINEARFET60V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 275A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.45V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 217W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
IFF600B12ME4PB11BPSA1
Infineon Technologies

IGBT MOD 1200V 600A 40W

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 600 A
  • Power - Max: 40 W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
재고18
DD340N22STIMHPSA1
Infineon Technologies

DIODE MOD GP 2200V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
  • Operating Temperature - Junction: 130°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
패키지: -
재고6
IPL60R065P7AUMA1
Infineon Technologies

MOSFET N-CH 600V 41A 4VSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 201W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4
  • Package / Case: 4-PowerTSFN
패키지: -
재고33,642
CY8C4146PVS-S432
Infineon Technologies

IC MCU 32BIT 64KB FLASH 28SSOP

  • Core Processor: ARM® Cortex®-M0
  • Core Size: 32-Bit Single-Core
  • Speed: 48MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 24
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 1x12b SAR; D/A 1x7/8b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
패키지: -
재고2,820
IPW65R155CFD7XKSA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 77W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 6.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
패키지: -
Request a Quote
FP100R12N2T7BPSA2
Infineon Technologies

LOW POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 100 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
  • Current - Collector Cutoff (Max): 10 µA
  • Input Capacitance (Cies) @ Vce: 21.7 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONO2B
패키지: -
재고45
CY8C4146AZE-S265
Infineon Technologies

IC MCU 32BIT 64KB FLASH 64TQFP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 24MHz
  • Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
  • Number of I/O: 54
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 8K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b, 20x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
패키지: -
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AUIRLR3915TRL
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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