Infineon Technologies 제품

IRG4BC15UD-L

Infineon Technologies

IGBT 600V 14A 49W TO262

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 42A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
• Power - Max: 49W
• Switching Energy: 240µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 23nC
• Td (on/off) @ 25°C: 17ns/160ns
• Test Condition: 480V, 7.8A, 75 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IRG4IBC30UDPBF

Infineon Technologies

IGBT 600V 17A 45W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 17A
• Current - Collector Pulsed (Icm): 68A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
• Power - Max: 45W
• Switching Energy: 380µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 40ns/91ns
• Test Condition: 480V, 12A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

FS820R08A6P2LMBPSA1

Infineon Technologies

HYBRID PACK DRIVE

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IPP22N03S4L15AKSA1

Infineon Technologies

MOSFET N-CH 30V 22A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

패키지: TO-220-3

IPD65R950C6ATMA1

Infineon Technologies

MOSFET N-CH TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFR7540PBF

Infineon Technologies

MOSFET N-CH 60V 90A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 66A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IPC100N04S51R9ATMA1

Infineon Technologies

N-CHANNEL_30/40V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-34
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

IRF7455PBF

Infineon Technologies

MOSFET N-CH 30V 15A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 25V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

BSC030N04NSGATMA1

Infineon Technologies

MOSFET N-CH 40V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 49µA
• Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

BG 3230 E6327

Infineon Technologies

MOSFET N-CH DUAL 8V SOT-363

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Test: 5V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: -
• Power - Output: -
• Voltage - Rated: 8V
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

IPG20N06S2L50AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 20A
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id: 2V @ 19µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
• Power - Max: 51W
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: PG-TDSON-8-10

패키지: 8-PowerVDFN

BTS736L2

Infineon Technologies

IC HISIDE PWR SWITCH 2CH PDSO-20

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 4.75 V ~ 43 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 4.4A
• Rds On (Typ): 36 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: P-DSO-20

패키지: 20-SOIC (0.295", 7.50mm Width)

IRS21850SPBF

Infineon Technologies

IC DVR HIGH SIDE SGL 600V 8-SOIC

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 15ns, 15ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

TC237L32F200SACKXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 292LFBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: CAN, FlexRay, LIN, QSPI
• Peripherals: DMA, WDT
• Number of I/O: 120
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 192K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IR3570AMGB07TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-901

• Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-VQFN (5x5)

패키지: 40-VFQFN Exposed Pad

CHL8318-03CRT

Infineon Technologies

IC REG BUCK 56VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

C164CI8RMCAKXUMA2

Infineon Technologies

IC MCU 16BIT 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: 80-MQFP

패키지: -

SIGC12T60NCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 21ns/110ns
• Test Condition: 300V, 10A, 27Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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IPD60R600PFD7SAUMA1

Infineon Technologies

CONSUMER PG-TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 31W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

CY8C4246AXI-M443T

Infineon Technologies

IC MCU 32BIT 64KB FLASH 44LQFP

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
• Number of I/O: 36
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR; D/A 4x7/8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-LQFP
• Supplier Device Package: 44-TQFP (10x10)

패키지: -

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811600-71480870

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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CYPD8225-97BZXI

Infineon Technologies

TYPE-C - OTHERS

• Applications: USB Type C
• Core Processor: ARM® Cortex®-M0+
• Program Memory Type: FLASH (256kB), ROM (96kB)
• Controller Series: EZ-PD™
• RAM Size: 32K x 8
• Interface: I2C, SPI, UART, USB
• Number of I/O: 50
• Voltage - Supply: 2.7V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 97-VFBGA
• Supplier Device Package: 97-BGA (6x6)

패키지: -

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IRLH5030TR2PBF

Infineon Technologies

MOSFET N-CH 100V 13A 8PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 50 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6) Single Die
• Package / Case: 8-PowerVDFN

패키지: -

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CYAT81688-100AA61

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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S27KL0643GABHB020

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 64Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

패키지: -

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IHW25N120R2FKSA1

Infineon Technologies

IGBT 1200V 50A 365W TO247-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 75 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
• Power - Max: 365 W
• Switching Energy: 1.59mJ
• Input Type: Standard
• Gate Charge: 60.7 nC
• Td (on/off) @ 25°C: -/324ns
• Test Condition: 600V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-1

패키지: -

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IRFC5305B

Infineon Technologies

MOSFET 55V 31A DIE

• FET Type: -
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 31A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 60mOhm @ 31A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Die
• Package / Case: Die

패키지: -

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SIGC81T60NCX1SA5

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 95ns/200ns
• Test Condition: 300V, 100A, 2.2Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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