페이지 307 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
IHD10N60RA	Infineon Technologies	IGBT 600V 20A 110W TO252-3 IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A Power - Max: 110W Switching Energy: 270µJ Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: -/170ns Test Condition: 400V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,352
IRFC4368D	Infineon Technologies	MOSFET N-CH WAFER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고4,656
AUIRFS3306	Infineon Technologies	MOSFET N-CH 60V 160A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고8,784
IRFR3707PBF	Infineon Technologies	MOSFET N-CH 30V 61A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,792
IRF5803D2PBF	Infineon Technologies	MOSFET P-CH 40V 3.4A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,064
IPP09N03LA	Infineon Technologies	MOSFET N-CH 25V 50A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	패키지: TO-220-3	재고5,152
IPB033N10N5LFATMA1	Infineon Technologies	MOSFET N-CH 100V D2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고3,920
IRF1010ZSTRLPBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고14,592
IPD50P04P413ATMA1	Infineon Technologies	MOSFET P-CH 40V 50A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 85µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고19,482
PTFC270101MV1R1KXUMA1	Infineon Technologies	RFP-LD10M Transistor Type: LDMOS Frequency: 2.17GHz Gain: 20.5dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 120mA Power - Output: 2.4W Voltage - Rated: 65V Package / Case: 10-LDFN Exposed Pad Supplier Device Package: PG-SON-10	패키지: 10-LDFN Exposed Pad	재고2,240
SMBTA 92 E6433	Infineon Technologies	TRANS PNP 300V 0.5A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Power - Max: 360mW Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고4,752
CHL8104-00CRT	Infineon Technologies	IC REG CTRLR DL BUCK PWM 40QFN Applications: Controller, DDR, Intel VR12, AMD SVI Voltage - Input: 2.805 V ~ 3.63 V Number of Outputs: 2 Voltage - Output: - Operating Temperature: 0°C ~ 85°C Mounting Type: Surface Mount Package / Case: 40-VFQFN Exposed Pad Supplier Device Package: 40-QFN (6x6)	패키지: 40-VFQFN Exposed Pad	재고4,752
TLE42962GV50HTSA1	Infineon Technologies	IC REG LINEAR 5V 30MA SCT595-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 45V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.3V @ 20mA Current - Output: 30mA Current - Quiescent (Iq): - Current - Supply (Max): 170µA ~ 5.2mA PSRR: 60dB (100Hz) Control Features: Inhibit Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Gull Wing Supplier Device Package: PG-SCT595-5	패키지: 6-SMD (5 Leads), Gull Wing	재고70,356
TLF51801ELVXUMA1	Infineon Technologies	IC REG CTRLR BUCK Output Type: Transistor Driver Function: Step-Down Output Configuration: Positive Topology: Buck Number of Outputs: 1 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 4.75 V ~ 45 V Frequency - Switching: 100kHz ~ 700kHz Duty Cycle (Max): - Synchronous Rectifier: Yes Clock Sync: Yes Serial Interfaces: - Control Features: Enable, Frequency Control Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-SSOP-14	패키지: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad	재고2,640
ICE2QR0665	Infineon Technologies	IC CTRLR SMPS QUASI-RESON 8DIP Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 650V Topology: Flyback Voltage - Start Up: 18V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V Duty Cycle: 50% Frequency - Switching: 52kHz Power (Watts): 88W Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: - Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: PG-DIP-8-6 Mounting Type: Through Hole	패키지: 8-DIP (0.300", 7.62mm)	재고197,460
C505CALMCAFXUMA1	Infineon Technologies	IC MCU 8BIT ROMLESS 44MQFP Core Processor: C500 Core Size: 8-Bit Speed: 20MHz Connectivity: CAN, EBI/EMI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 34 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 1.25K x 8 Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 44-QFN Supplier Device Package: P-MQFP-44	패키지: 44-QFN	재고2,256
TLE4984CHTE6747HAMA2	Infineon Technologies	IC SPEED SENSOR MAGN PG-SSO-3 Type: - Technology: - Axis: - Output Type: - Sensing Range: - Voltage - Supply: - Current - Supply (Max): - Current - Output (Max): - Resolution: - Bandwidth: - Operating Temperature: - Features: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,780
IR3565AMCP02TRP	Infineon Technologies	IC REG BUCK 48VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,104
IPB80N06S2H5AUMA1	Infineon Technologies	IC MOSFET N-CH TO263-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
PEB3394HLV1-4	Infineon Technologies	TELEPHONY INTERFACE CIRCUIT Function: - Interface: - Number of Circuits: - Voltage - Supply: - Current - Supply: - Power (Watts): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
PX3244HDMG008XTMA1	Infineon Technologies	LED PX3244HDMG008XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote
IMW120R350M1HXKSA1	Infineon Technologies	SICFET N-CH 1.2KV 4.7A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	패키지: -	재고3,627
H00009-38	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
TLE918021QKXUMA1	Infineon Technologies	IC MOTOR DRIVER 64LQFP Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
IPD06P004NSAUMA1	Infineon Technologies	MOSFET P-CH 60V 16.4A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 710µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	Request a Quote
BSM35GD120DN2E3224BOSA1	Infineon Technologies	IGBT MOD 1200V 50A 280W IGBT Type: - Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Power - Max: 280 W Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote
IPU95R1K2P7AKMA1	Infineon Technologies	MOSFET N-CH 950V 6A TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: -	재고4,404
SPU01N60C3BKMA1	Infineon Technologies	MOSFET N-CH 650V 800MA TO251-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 11W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-21 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: -	Request a Quote

IHD10N60RA

Infineon Technologies

IGBT 600V 20A 110W TO252-3

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 10A
Power - Max: 110W
Switching Energy: 270µJ
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: -/170ns
Test Condition: 400V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,352

IRFC4368D

Infineon Technologies

MOSFET N-CH WAFER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고4,656

AUIRFS3306

Infineon Technologies

MOSFET N-CH 60V 160A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4520pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고8,784

IRFR3707PBF

Infineon Technologies

MOSFET N-CH 30V 61A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,792

IRF5803D2PBF

Infineon Technologies

MOSFET P-CH 40V 3.4A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,064

IPP09N03LA

Infineon Technologies

MOSFET N-CH 25V 50A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

패키지: TO-220-3

재고5,152

IPB033N10N5LFATMA1

Infineon Technologies

MOSFET N-CH 100V D2PAK-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고3,920

IRF1010ZSTRLPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고14,592

IPD50P04P413ATMA1

Infineon Technologies

MOSFET P-CH 40V 50A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 85µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고19,482

PTFC270101MV1R1KXUMA1

Infineon Technologies

RFP-LD10M

Transistor Type: LDMOS
Frequency: 2.17GHz
Gain: 20.5dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 120mA
Power - Output: 2.4W
Voltage - Rated: 65V
Package / Case: 10-LDFN Exposed Pad
Supplier Device Package: PG-SON-10

패키지: 10-LDFN Exposed Pad

재고2,240

SMBTA 92 E6433

Infineon Technologies

TRANS PNP 300V 0.5A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Power - Max: 360mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고4,752

CHL8104-00CRT

Infineon Technologies

IC REG CTRLR DL BUCK PWM 40QFN

Applications: Controller, DDR, Intel VR12, AMD SVI
Voltage - Input: 2.805 V ~ 3.63 V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Supplier Device Package: 40-QFN (6x6)

패키지: 40-VFQFN Exposed Pad

재고4,752

TLE42962GV50HTSA1

Infineon Technologies

IC REG LINEAR 5V 30MA SCT595-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 45V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.3V @ 20mA
Current - Output: 30mA
Current - Quiescent (Iq): -
Current - Supply (Max): 170µA ~ 5.2mA
PSRR: 60dB (100Hz)
Control Features: Inhibit
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Gull Wing
Supplier Device Package: PG-SCT595-5

패키지: 6-SMD (5 Leads), Gull Wing

재고70,356

TLF51801ELVXUMA1

Infineon Technologies

IC REG CTRLR BUCK

Output Type: Transistor Driver
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Number of Outputs: 1
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 4.75 V ~ 45 V
Frequency - Switching: 100kHz ~ 700kHz
Duty Cycle (Max): -
Synchronous Rectifier: Yes
Clock Sync: Yes
Serial Interfaces: -
Control Features: Enable, Frequency Control
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-SSOP-14

패키지: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad

재고2,640

ICE2QR0665

Infineon Technologies

IC CTRLR SMPS QUASI-RESON 8DIP

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Topology: Flyback
Voltage - Start Up: 18V
Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
Duty Cycle: 50%
Frequency - Switching: 52kHz
Power (Watts): 88W
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: -
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: PG-DIP-8-6
Mounting Type: Through Hole

패키지: 8-DIP (0.300", 7.62mm)

재고197,460

C505CALMCAFXUMA1

Infineon Technologies

IC MCU 8BIT ROMLESS 44MQFP

Core Processor: C500
Core Size: 8-Bit
Speed: 20MHz
Connectivity: CAN, EBI/EMI, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 34
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 1.25K x 8
Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 44-QFN
Supplier Device Package: P-MQFP-44

패키지: 44-QFN

재고2,256

TLE4984CHTE6747HAMA2

Infineon Technologies

IC SPEED SENSOR MAGN PG-SSO-3

Type: -
Technology: -
Axis: -
Output Type: -
Sensing Range: -
Voltage - Supply: -
Current - Supply (Max): -
Current - Output (Max): -
Resolution: -
Bandwidth: -
Operating Temperature: -
Features: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,780

IR3565AMCP02TRP

Infineon Technologies

IC REG BUCK 48VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,104

IPB80N06S2H5AUMA1

Infineon Technologies

IC MOSFET N-CH TO263-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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PEB3394HLV1-4

Infineon Technologies

TELEPHONY INTERFACE CIRCUIT

Function: -
Interface: -
Number of Circuits: -
Voltage - Supply: -
Current - Supply: -
Power (Watts): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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PX3244HDMG008XTMA1

Infineon Technologies

LED PX3244HDMG008XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

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IMW120R350M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 4.7A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Vgs (Max): +23V, -7V
FET Feature: -
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

패키지: -

재고3,627

H00009-38

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

TLE918021QKXUMA1

Infineon Technologies

IC MOTOR DRIVER 64LQFP

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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IPD06P004NSAUMA1

Infineon Technologies

MOSFET P-CH 60V 16.4A TO252

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 710µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

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BSM35GD120DN2E3224BOSA1

Infineon Technologies

IGBT MOD 1200V 50A 280W

IGBT Type: -
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Power - Max: 280 W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 35A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

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IPU95R1K2P7AKMA1

Infineon Technologies

MOSFET N-CH 950V 6A TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 950 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 478 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: -

재고4,404

SPU01N60C3BKMA1

Infineon Technologies

MOSFET N-CH 650V 800MA TO251-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 11W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3-21
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: -

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