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Infineon Technologies |
MOSFET N-CH 30V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고97,908 |
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Infineon Technologies |
MOSFET P-CH 100V 6.8A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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패키지: TO-262-3 Long Leads, I2Pak, TO-262AA |
재고39,528 |
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Infineon Technologies |
MOSFET N-CH 55V 120A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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패키지: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
재고6,976 |
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Infineon Technologies |
MOSFET N-CH 8TDSON
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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패키지: - |
재고2,736 |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A 10-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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패키지: TO-220-3 Full Pack |
재고22,872 |
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Infineon Technologies |
MOSFET 2P-CH 12V 4.3A 8TSSOP
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.3A
- Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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패키지: 8-TSSOP (0.173", 4.40mm Width) |
재고5,488 |
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Infineon Technologies |
TRANS NPN 25V 0.5A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 25V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 500mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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패키지: TO-236-3, SC-59, SOT-23-3 |
재고4,304 |
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Infineon Technologies |
TRANS PREBIAS NPN 0.33W SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 1k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100MHz
- Power - Max: 330mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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패키지: TO-236-3, SC-59, SOT-23-3 |
재고574,188 |
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Infineon Technologies |
DIODE RF SW 50V 100MA SCD80
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
- Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
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패키지: SC-80 |
재고4,800 |
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Infineon Technologies |
IC PS SYSTEM MULTI VOLT PDSO-36
- Applications: Power Supply, Automotive Applications
- Voltage - Input: 5.5 V ~ 60 V
- Number of Outputs: 3
- Voltage - Output: 2.6V, 3.3V, 5V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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패키지: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
재고421,620 |
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Infineon Technologies |
IC REG LIN POS ADJ 1A SOT223-4
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 15V
- Voltage - Output (Min/Fixed): 1.25V
- Voltage - Output (Max): 13.8V
- Voltage Dropout (Max): 1.25V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 5mA
- PSRR: 75dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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패키지: TO-261-4, TO-261AA |
재고3,936 |
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Infineon Technologies |
IC REG LINEAR 3.3V 1A DPAK
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.3V @ 1A
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
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패키지: TO-252-3, DPak (2 Leads + Tab), SC-63 |
재고4,688 |
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Infineon Technologies |
IC REG LIN POS ADJ 50MA SCT595-5
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): Tracking
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.3V @ 10mA
- Current - Output: 50mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 20µA ~ 3mA
- PSRR: 60dB (100Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Gull Wing
- Supplier Device Package: PG-SCT595-5
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패키지: 6-SMD (5 Leads), Gull Wing |
재고26,004 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-DIP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 3.3 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 500V
- Rise / Fall Time (Typ): 25ns, 17ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads
- Supplier Device Package: 14-PDIP
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패키지: 14-DIP (0.300", 7.62mm), 13 Leads |
재고3,808 |
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Infineon Technologies |
IC HALF BRIDGE DRIVER 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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패키지: 8-SOIC (0.154", 3.90mm Width) |
재고8,124 |
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Infineon Technologies |
IC SLIC VOICE ACCESS VQFN-48
- Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
- Interface: IOM-2, PCM
- Number of Circuits: 2
- Voltage - Supply: 5V
- Current - Supply: 60mA, 90mA
- Power (Watts): -
- Operating Temperature: 0°C ~ 70°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: P-VQFN-48-4
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패키지: 48-VFQFN Exposed Pad |
재고5,520 |
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Infineon Technologies |
IC MCU 16BIT 128KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 47
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
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패키지: 64-LQFP |
재고5,712 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 100LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 120MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, SPI, UART, USB
- Peripherals: DMA, I2S, LED, POR, PWM, WDT
- Number of I/O: 55
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 160K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 24x12b, D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-11
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패키지: 100-LQFP Exposed Pad |
재고4,736 |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 112BGA
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit Single-Core
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 83
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 112-LFBGA
- Supplier Device Package: 112-PFBGA (10x10)
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패키지: - |
Request a Quote |
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Infineon Technologies |
BLDC_DRIVER_IC PG-VQFN-48
- Motor Type - Stepper: Multiphase
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Controller - Speed
- Output Configuration: Pre-Driver - Half Bridge (3)
- Interface: PWM, SPI
- Technology: NMOS
- Step Resolution: -
- Applications: -
- Current - Output: 250mA
- Voltage - Supply: 6V ~ 28V
- Voltage - Load: 3V ~ 28V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-29
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패키지: - |
재고27,975 |
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Infineon Technologies |
MOSFET N-CH 30V 19A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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패키지: - |
재고14,352 |
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Infineon Technologies |
MEDIUM POWER 62MM
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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패키지: - |
재고30 |
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Infineon Technologies |
MOSFET N-CH 60V 19A/112A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 112A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-26
- Package / Case: 8-PowerTDFN
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패키지: - |
재고18,780 |
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Infineon Technologies |
IC MCU 32BIT 384KB FLASH 112BGA
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit Single-Core
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 83
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 112-LFBGA
- Supplier Device Package: 112-PFBGA (10x10)
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패키지: - |
Request a Quote |
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Infineon Technologies |
MOSFET_(20V 40V)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 275A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5704 pF @ 20 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 129W (Tc)
- Rds On (Max) @ Id, Vgs: 0.91mOhm @ 88A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-34
- Package / Case: 8-PowerTDFN
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패키지: - |
재고3,000 |
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Infineon Technologies |
TRAVEO-2 BODY ENTRYLEVEL
- Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
- Core Size: 32-Bit Dual-Core
- Speed: 100MHz, 160MHz
- Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
- Number of I/O: 152
- Program Memory Size: 4.063MB (4.063M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 512K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 82x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 176-LQFP
- Supplier Device Package: 176-LQFP (24x24)
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패키지: - |
Request a Quote |
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Infineon Technologies |
IC SRAM 8MBIT PARALLEL 48TSOP I
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 8Mbit
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 45ns
- Access Time: 45 ns
- Voltage - Supply: 2.2V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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패키지: - |
Request a Quote |
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Infineon Technologies |
IC MCU 8BIT 20KB FLASH 20TSSOP
- Core Processor: F²MC-8FX
- Core Size: 8-Bit
- Speed: 16.25MHz
- Connectivity: LINbus, UART/USART
- Peripherals: LVD, POR, PWM, WDT
- Number of I/O: 15
- Program Memory Size: 20KB (20K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 496 x 8
- Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
- Data Converters: A/D 6x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 20-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 20-TSSOP
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패키지: - |
재고16,800 |
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