페이지 454 - Infineon Technologies 제품

부품 번호	제조업체	설명	패키지	재고
AUIRGP4062D1-E	Infineon Technologies	IGBT 600V 55A 217W TO247AD IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A Power - Max: 217W Switching Energy: 532µJ (on), 311µJ (off) Input Type: Standard Gate Charge: 77nC Td (on/off) @ 25°C: 19ns/90ns Test Condition: 400V, 24A, 10 Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	패키지: TO-247-3	재고4,688
IRG4IBC20FDPBF	Infineon Technologies	IGBT 600V 14.3A 34W TO220FP IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 14.3A Current - Collector Pulsed (Icm): 64A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A Power - Max: 34W Switching Energy: 250µJ (on), 640µJ (off) Input Type: Standard Gate Charge: 27nC Td (on/off) @ 25°C: 43ns/240ns Test Condition: 480V, 9A, 50 Ohm, 15V Reverse Recovery Time (trr): 37ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	패키지: TO-220-3 Full Pack	재고6,252
IRFU4620PBF	Infineon Technologies	MOSFET N-CH 200V 24A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고22,560
IRFL024ZPBF	Infineon Technologies	MOSFET N-CH 55V 5.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	패키지: TO-261-4, TO-261AA	재고2,448
IPS65R400CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	재고5,488
IRL2505STRLPBF	Infineon Technologies	MOSFET N-CH 55V 104A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,472
BCR 119F E6327	Infineon Technologies	TRANS PREBIAS NPN 250MW TSFP-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 150MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	패키지: SOT-723	재고2,176
SIDC81D60E6	Infineon Technologies	DIODE GEN PURP 600V 200A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	패키지: Die	재고4,960
BAS1602LE6327XTMA1	Infineon Technologies	DIODE GEN PURP 80V 200MA TSLP-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2 Operating Temperature - Junction: 150°C (Max)	패키지: SOD-882	재고4,672
IDW20G120C5BFKSA1	Infineon Technologies	DIODE 1.2KV 20A RAPID2 TO247-3 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 31A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 83µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	패키지: TO-247-3	재고6,072
IRIS4011K	Infineon Technologies	IC SWTCH PWR 650V 2.7A TO-262-5 Applications: Controller, ACDC, DCDC Switching Power Supplies Voltage - Input: 10 V ~ 16 V Number of Outputs: 1 Voltage - Output: 650V Operating Temperature: -20°C ~ 125°C Mounting Type: Through Hole Package / Case: TO-262-5 Supplier Device Package: TO-262-5	패키지: TO-262-5	재고19,056
TLE4270NKSA1	Infineon Technologies	IC REG LINEAR 5V 650MA P-TO220-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.7V @ 550mA Current - Output: 650mA Current - Quiescent (Iq): - Current - Supply (Max): 1.5mA ~ 90mA PSRR: 54dB (100Hz) Control Features: Reset Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage Operating Temperature: -40°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-5 Formed Leads Supplier Device Package: P-TO220-5	패키지: TO-220-5 Formed Leads	재고7,984
BTN7930S	Infineon Technologies	IC MOTOR DRIVER PAR TO220-7 Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 32A Voltage - Supply: 8 V ~ 18 V Voltage - Load: 8 V ~ 18 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-7 Supplier Device Package: PG-TO220-7	패키지: TO-220-7	재고7,088
SAK-XE164HM-24F80L AA	Infineon Technologies	IC MCU 16BIT 192KB FLASH 100LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 76 Program Memory Size: 192KB (192K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 24K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-8	패키지: 100-LQFP Exposed Pad	재고5,760
SAF-XC164N-16F20F BB	Infineon Technologies	IC MCU 16BIT 128KB FLASH 100TQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 20MHz Connectivity: EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 79 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V Data Converters: - Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,040
TLE9261BQXV33XUMA1	Infineon Technologies	IC SBC 48VQFN Applications: Automotive Interface: SPI Voltage - Supply: 28V Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: PG-VQFN-48-31 Mounting Type: Surface Mount	패키지: 48-VFQFN Exposed Pad	재고5,424
ASP1257	Infineon Technologies	IC REGULATOR PG-VQFN-48-900 Applications: - Voltage - Input: - Number of Outputs: - Voltage - Output: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,216
IFX21401MBHTSA1	Infineon Technologies	IC REG LIN POS ADJ 50MA SCT595-5 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 40V Voltage - Output (Min/Fixed): Tracking Voltage - Output (Max): - Voltage Dropout (Max): 0.3V @ 10mA Current - Output: 50mA Current - Quiescent (Iq): 200µA Current - Supply (Max): 5mA PSRR: 48dB (100Hz) Control Features: Enable Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Gull Wing Supplier Device Package: PG-SCT595-5	패키지: 6-SMD (5 Leads), Gull Wing	재고6,128
IR3826MTRPBFAUMA1	Infineon Technologies	IC REG BUCK ADJ 23A IQFN-22 Function: Step-Down Output Configuration: Positive Topology: Buck Output Type: Adjustable Number of Outputs: 1 Voltage - Input (Min): 1V Voltage - Input (Max): 17V Voltage - Output (Min/Fixed): 0.6V Voltage - Output (Max): 14.62V Current - Output: 23A Frequency - Switching: 1.5MHz Synchronous Rectifier: Yes Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerVQFN Supplier Device Package: PG-IQFN-22	패키지: 22-PowerVQFN	재고3,984
S29GL01GS11DHA023	Infineon Technologies	IC FLASH 1GBIT CFI 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	패키지: -	Request a Quote
S6J351CJSBSE20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 132MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT Number of I/O: 126 Program Memory Size: 2.112M x 8 Program Memory Type: FLASH EEPROM Size: - RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 48x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-TEQFP (24x24)	패키지: -	Request a Quote
IPP60R022S7XKSA1	Infineon Technologies	MOSFET N-CH 600V 23A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	패키지: -	재고66
CYAT81689-100AS61Z	Infineon Technologies	TrueTouch Touchscreen: 2 Wire Capacitive Resolution (Bits): 32 b Interface: I2C, SPI Voltage Reference: - Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Current - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote
IAUT300N08S5N012ATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	패키지: -	Request a Quote
BSC146N10LS5ATMA1	Infineon Technologies	MOSFET N-CH 100V 44A TDSON-8-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 23µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	패키지: -	재고45,288
ISZ062N06NM6ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	패키지: -	Request a Quote
IRF100P218AKMA1	Infineon Technologies	MOSFET N-CH 100V 209A TO247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 209A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 556W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	패키지: -	재고1,215
PXE1110CPMG003XTMA1	Infineon Technologies	IFX PRIMARION CNTRLLER Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고8,490

AUIRGP4062D1-E

Infineon Technologies

IGBT 600V 55A 217W TO247AD

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 55A
Current - Collector Pulsed (Icm): 72A
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
Power - Max: 217W
Switching Energy: 532µJ (on), 311µJ (off)
Input Type: Standard
Gate Charge: 77nC
Td (on/off) @ 25°C: 19ns/90ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Reverse Recovery Time (trr): 102ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD

패키지: TO-247-3

재고4,688

IRG4IBC20FDPBF

Infineon Technologies

IGBT 600V 14.3A 34W TO220FP

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 14.3A
Current - Collector Pulsed (Icm): 64A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
Power - Max: 34W
Switching Energy: 250µJ (on), 640µJ (off)
Input Type: Standard
Gate Charge: 27nC
Td (on/off) @ 25°C: 43ns/240ns
Test Condition: 480V, 9A, 50 Ohm, 15V
Reverse Recovery Time (trr): 37ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220AB Full-Pak

패키지: TO-220-3 Full Pack

재고6,252

IRFU4620PBF

Infineon Technologies

MOSFET N-CH 200V 24A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고22,560

IRFL024ZPBF

Infineon Technologies

MOSFET N-CH 55V 5.1A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

재고2,448

IPS65R400CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

재고5,488

IRL2505STRLPBF

Infineon Technologies

MOSFET N-CH 55V 104A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 54A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,472

BCR 119F E6327

Infineon Technologies

TRANS PREBIAS NPN 250MW TSFP-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

패키지: SOT-723

재고2,176

SIDC81D60E6

Infineon Technologies

DIODE GEN PURP 600V 200A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

패키지: Die

재고4,960

BAS1602LE6327XTMA1

Infineon Technologies

DIODE GEN PURP 80V 200MA TSLP-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2
Operating Temperature - Junction: 150°C (Max)

패키지: SOD-882

재고4,672

IDW20G120C5BFKSA1

Infineon Technologies

DIODE 1.2KV 20A RAPID2 TO247-3

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 31A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 83µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

패키지: TO-247-3

재고6,072

IRIS4011K

Infineon Technologies

IC SWTCH PWR 650V 2.7A TO-262-5

Applications: Controller, ACDC, DCDC Switching Power Supplies
Voltage - Input: 10 V ~ 16 V
Number of Outputs: 1
Voltage - Output: 650V
Operating Temperature: -20°C ~ 125°C
Mounting Type: Through Hole
Package / Case: TO-262-5
Supplier Device Package: TO-262-5

패키지: TO-262-5

재고19,056

TLE4270NKSA1

Infineon Technologies

IC REG LINEAR 5V 650MA P-TO220-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 42V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.7V @ 550mA
Current - Output: 650mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1.5mA ~ 90mA
PSRR: 54dB (100Hz)
Control Features: Reset
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Operating Temperature: -40°C ~ 150°C
Mounting Type: Through Hole
Package / Case: TO-220-5 Formed Leads
Supplier Device Package: P-TO220-5

패키지: TO-220-5 Formed Leads

재고7,984

BTN7930S

Infineon Technologies

IC MOTOR DRIVER PAR TO220-7

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 32A
Voltage - Supply: 8 V ~ 18 V
Voltage - Load: 8 V ~ 18 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7
Supplier Device Package: PG-TO220-7

패키지: TO-220-7

재고7,088

SAK-XE164HM-24F80L AA

Infineon Technologies

IC MCU 16BIT 192KB FLASH 100LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 80MHz
Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 76
Program Memory Size: 192KB (192K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 24K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-8

패키지: 100-LQFP Exposed Pad

재고5,760

SAF-XC164N-16F20F BB

Infineon Technologies

IC MCU 16BIT 128KB FLASH 100TQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 20MHz
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
Data Converters: -
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,040

TLE9261BQXV33XUMA1

Infineon Technologies

IC SBC 48VQFN

Applications: Automotive
Interface: SPI
Voltage - Supply: 28V
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: PG-VQFN-48-31
Mounting Type: Surface Mount

패키지: 48-VFQFN Exposed Pad

재고5,424

ASP1257

Infineon Technologies

IC REGULATOR PG-VQFN-48-900

Applications: -
Voltage - Input: -
Number of Outputs: -
Voltage - Output: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,216

IFX21401MBHTSA1

Infineon Technologies

IC REG LIN POS ADJ 50MA SCT595-5

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Voltage - Output (Max): -
Voltage Dropout (Max): 0.3V @ 10mA
Current - Output: 50mA
Current - Quiescent (Iq): 200µA
Current - Supply (Max): 5mA
PSRR: 48dB (100Hz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Gull Wing
Supplier Device Package: PG-SCT595-5

패키지: 6-SMD (5 Leads), Gull Wing

재고6,128

IR3826MTRPBFAUMA1

Infineon Technologies

IC REG BUCK ADJ 23A IQFN-22

Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 1V
Voltage - Input (Max): 17V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Output (Max): 14.62V
Current - Output: 23A
Frequency - Switching: 1.5MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerVQFN
Supplier Device Package: PG-IQFN-22

패키지: 22-PowerVQFN

재고3,984

S29GL01GS11DHA023

Infineon Technologies

IC FLASH 1GBIT CFI 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

패키지: -

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S6J351CJSBSE20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 132MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Number of I/O: 126
Program Memory Size: 2.112M x 8
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 48x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-TEQFP (24x24)

패키지: -

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IPP60R022S7XKSA1

Infineon Technologies

MOSFET N-CH 600V 23A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 390W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

패키지: -

재고66

CYAT81689-100AS61Z

Infineon Technologies

TrueTouch

Touchscreen: 2 Wire Capacitive
Resolution (Bits): 32 b
Interface: I2C, SPI
Voltage Reference: -
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Current - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

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IAUT300N08S5N012ATMA1

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

패키지: -

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BSC146N10LS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 44A TDSON-8-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

패키지: -

재고45,288

ISZ062N06NM6ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

패키지: -

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IRF100P218AKMA1

Infineon Technologies

MOSFET N-CH 100V 209A TO247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs: 412 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

패키지: -

재고1,215

PXE1110CPMG003XTMA1

Infineon Technologies

IFX PRIMARION CNTRLLER

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고8,490