Infineon Technologies 제품

IRG7CH23K10EF

Infineon Technologies

IGBT 1200V DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IHY30N160R2XKSA1

Infineon Technologies

IGBT 1600V 30A 312W TO247HC-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 312W
• Switching Energy: 2.53mJ
• Input Type: Standard
• Gate Charge: 94nC
• Td (on/off) @ 25°C: -/525ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: PG-TO247HC-3

패키지: TO-247-3 Variant

IRG6I330U-168P

Infineon Technologies

IGBT 330V 28A 43W TO220ABFP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 330V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 28A
• Power - Max: 43W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

SI3443DV

Infineon Technologies

MOSFET P-CH 20V 4.4A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro6?(TSOP-6)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

IRFSL4510PBF

Infineon Technologies

MOSFET N-CH 100V 61A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3180pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 37A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFS4020TRLPBF

Infineon Technologies

MOSFET N-CH 200V 18A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BC 807-40W H6433

Infineon Technologies

TRANS PNP 45V 0.5A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

BC818K16WH6327XTSA1

Infineon Technologies

TRANS NPN 25V 0.5A SOT323

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 170MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

패키지: SC-70, SOT-323

BCR48PNE6433BTMA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 70mA, 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k, 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 100MHz, 200MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

패키지: 6-VSSOP, SC-88, SOT-363

TDA21302

Infineon Technologies

IC CTRLR PWM MULTI CPU PDSO-32

• Applications: PWM Controller, CPU core
• Voltage - Input: 4.5 V ~ 5.5 V
• Number of Outputs: 4
• Voltage - Output: 0.8375 V ~ 1.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 32-DSO

패키지: 32-SOIC (0.295", 7.50mm Width)

TLE4267NKSA1

Infineon Technologies

IC REG LINEAR 5V 400MA TO220-7

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 400mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 4mA ~ 80mA
• PSRR: 54dB (100Hz)
• Control Features: Inhibit, Reset
• Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-7 (Formed Leads)
• Supplier Device Package: PG-TO220-7

패키지: TO-220-7 (Formed Leads)

IR35201MTRPBF

Infineon Technologies

IC CTRLR PWM MULTIPHASE 56QFN

• Applications: Multiphase Controller
• Current - Supply: -
• Voltage - Supply: 3.3V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: 56-QFN (7x7)

패키지: -

IR2130JTRPBF

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.2V
• Current - Peak Output (Source, Sink): 250mA, 500mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 80ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

패키지: 44-LCC (J-Lead), 32 Leads

IR21084SPBF

Infineon Technologies

IC DRIVER HALF BRIDGE 14SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

2EDN8524GXTMA1

Infineon Technologies

DRIVER IC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 20 V
• Logic Voltage - VIL, VIH: 1.2V, 1.9V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 5.3ns, 4.5ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: PG-WSON-8-1

패키지: 8-WDFN Exposed Pad

BTS52001ENAXUMA1

Infineon Technologies

IC SWITCH PWR HISIDE 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 28 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 200 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-TDSO-8-31

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

S26HL01GTFPBHB033

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

패키지: -

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FZE1065EGGEGXUMA1

Infineon Technologies

FZE1065EG - INSULATED GATE BIPOL

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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TC337LP32F200SAALXUMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 292LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit Single-Core
• Speed: 200MHz
• Connectivity: DMA, I2S, PWM, WDT
• Peripherals: DMA, I2S, PWM, WDT
• Number of I/O: -
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 248K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 150°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-11

패키지: -

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SIGC19T60SEX1SA1

Infineon Technologies

IGBT 3 CHIP 600V

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 40 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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CYPD3175-24LQXQT

Infineon Technologies

CCG3PA

• Protocol: USB
• Function: Controller
• Interface: I2C, SPI, UART
• Standards: USB 3.0
• Voltage - Supply: 2.7V, 3V ~ 5.5V, 24.5V
• Current - Supply: 10mA
• Operating Temperature: -40°C ~ 105°C (TA)
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

패키지: -

IPW90R120C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 36A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
• Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-21
• Package / Case: TO-247-3

패키지: -

FS225R12OE4BOSA1

Infineon Technologies

IGBT MOD 1200V 350A 1250W

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 350 A
• Power - Max: 1250 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

FS150R17N3E4B11BOSA1

Infineon Technologies

IGBT MOD 1700V 150A 835W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 150 A
• Power - Max: 835 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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BAS40B5000

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 120mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 30 V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23
• Operating Temperature - Junction: 150°C

패키지: -

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FS100R12KT3BOSA1

Infineon Technologies

IGBT MOD 1200V 140A 480W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 140 A
• Power - Max: 480 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 7.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

IRLHS2242TR2PBF

Infineon Technologies

MOSFET P-CH 20V 5.8A 2X2 PQFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.1V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 6-PQFN (2x2)
• Package / Case: 6-PowerVDFN

패키지: -

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IPB65R190C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 13A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 290µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 72W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -