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Infineon Technologies 제품

기록 16,988
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BSM150GB170DN2HOSA1
Infineon Technologies

MODULE IGBT 1700V

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 1250W
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
  • Current - Collector Cutoff (Max): 1.5mA
  • Input Capacitance (Cies) @ Vce: 20nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고3,408
AUXMOS20956STR
Infineon Technologies

MOSFET N-CH 16SOIC

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고7,008
IRF3704LPBF
Infineon Technologies

MOSFET N-CH 20V 77A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
패키지: TO-262-3 Long Leads, I2Pak, TO-262AA
재고5,968
IRFR3504ZTR
Infineon Technologies

MOSFET N-CH 40V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,632
SPA11N60C3XKSA1
Infineon Technologies

MOSFET N-CH 600V 11A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31 Full Pack
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고7,056
IRF5210STRR
Infineon Technologies

MOSFET P-CH 100V 40A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,736
IPW65R190CFDAFKSA1
Infineon Technologies

MOSFET N-CH 650V 17.5A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
패키지: TO-247-3
재고6,704
hot IPB06N03LA
Infineon Technologies

MOSFET N-CH 25V 50A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고83,772
IPD050N10N5ATMA1
Infineon Technologies

MOSFET N-CH TO-252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 84µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,224
BSS84PH6327XTSA2
Infineon Technologies

MOSFET P-CH 60V 170MA SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고771,486
BC 807-25 B5003
Infineon Technologies

TRANS PNP 45V 0.5A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,656
BBY5305WE6327HTSA1
Infineon Technologies

DIODE TUNING HIGH Q CC SOT-323

  • Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
  • Capacitance Ratio: 2.6
  • Capacitance Ratio Condition: C1/C3
  • Voltage - Peak Reverse (Max): 6V
  • Diode Type: 1 Pair Common Cathode
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
패키지: SC-70, SOT-323
재고4,608
TLE8718SAAUMA4
Infineon Technologies

IC PWR SWITCH 36DSO

  • Switch Type: General Purpose
  • Number of Outputs: 18
  • Ratio - Input:Output: 1:18
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: -
  • Voltage - Load: 4.5 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): -
  • Rds On (Typ): -
  • Input Type: -
  • Features: -
  • Fault Protection: Over Temperature, Short Circuit, UVLO
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 36-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-36
패키지: 36-BSSOP (0.295", 7.50mm Width)
재고2,016
IR2277STRPBF
Infineon Technologies

IC CURRENT SENSE 0.2& 16SOIC

  • Function: Current Sense
  • Sensing Method: -
  • Accuracy: ±0.2%
  • Voltage - Input: 8 V ~ 20 V
  • Current - Output: -
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고4,512
PEF 24624 E V1.2-G
Infineon Technologies

IC SHDSL TRANSCEIVER LBGA-324

  • Function: Symmetrical DSL Front End (SDFE)
  • Interface: ISDN, SHDSL
  • Number of Circuits: 4
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 324-LBGA
  • Supplier Device Package: P-LBGA-324
패키지: 324-LBGA
재고6,384
SAK-TC1767-256F133HR AD
Infineon Technologies

IC MCU 32BIT 2MB FLASH 176LQFP

  • Core Processor: TriCore?
  • Core Size: 32-Bit
  • Speed: 133MHz
  • Connectivity: ASC, CAN, MLI, MSC, SSC
  • Peripherals: DMA, POR, WDT
  • Number of I/O: 88
  • Program Memory Size: 2MB (2M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
  • Data Converters: A/D 4x10b, 32x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 176-LQFP
  • Supplier Device Package: 176-LQFP (24x24)
패키지: 176-LQFP
재고5,136
XMC4700E196K2048AAXQMA1
Infineon Technologies

IC MCU 32BIT 2MB FLASH 196BGA

  • Core Processor: ARM? Cortex?-M4
  • Core Size: 32-Bit
  • Speed: 144MHz
  • Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
  • Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
  • Number of I/O: 155
  • Program Memory Size: 2MB (2M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 352K x 8
  • Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
  • Data Converters: A/D 32x12b, D/A 2x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 196-LFBGA
  • Supplier Device Package: PG-LFBGA-196-2
패키지: 196-LFBGA
재고17,796
SLB9670XQ20FW760XUMA1
Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

  • Applications: Embedded Security Trusted Computing
  • Core Processor: 16-Bit
  • Program Memory Type: -
  • Controller Series: -
  • RAM Size: -
  • Interface: SPI
  • Number of I/O: 1
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-32-13
패키지: 32-VFQFN Exposed Pad
재고3,904
TLE4935LHALA1
Infineon Technologies

MAGNETIC SWITCH LATCH PSSO-3-2

  • Function: Latch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 20mT Trip, -20mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3.8 V ~ 24 V
  • Current - Supply (Max): 8mA
  • Current - Output (Max): 100mA
  • Output Type: Open Collector
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 3-SIP, SSO-3-02
  • Supplier Device Package: P-SSO-3-2
패키지: 3-SIP, SSO-3-02
재고2,808
TLE92633BQXV33XUMA1
Infineon Technologies

IC SBC 48VQFN

  • Applications: Automotive
  • Interface: SPI
  • Voltage - Supply: 28V
  • Package / Case: 48-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-48-31
  • Mounting Type: Surface Mount
패키지: 48-VFQFN Exposed Pad
재고6,112
PX8897EDQGR2ER1240AXUMA1
Infineon Technologies

IC REGULATOR PG-VQFN-48-2

  • Applications: -
  • Voltage - Input: -
  • Number of Outputs: -
  • Voltage - Output: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,504
CHL8326-07CRT
Infineon Technologies

IC REG BUCK 48VQFN

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,472
CHL8325A-19CRT
Infineon Technologies

IC REG BUCK 40VQFN

  • Output Type: -
  • Function: -
  • Output Configuration: -
  • Topology: -
  • Number of Outputs: -
  • Output Phases: -
  • Voltage - Supply (Vcc/Vdd): -
  • Frequency - Switching: -
  • Duty Cycle (Max): -
  • Synchronous Rectifier: -
  • Clock Sync: -
  • Serial Interfaces: -
  • Control Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,712
BSC320N20NS3GATMA1
Infineon Technologies

MOSFET N-CH 200V 36A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
패키지: -
재고65,658
IKWH75N65EH7XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
  • Power - Max: 341 W
  • Switching Energy: 2.42mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 150 nC
  • Td (on/off) @ 25°C: 25ns/45ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 89 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
패키지: -
재고642
CYT2BL8BAAQ0AZSGST
Infineon Technologies

IC MCU

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
IGI60F140A1LAUMA1
Infineon Technologies

IC HALF BRIDGE DRIVER 1A 21TIQFN

  • Output Configuration: Half Bridge
  • Applications: General Purpose
  • Interface: -
  • Load Type: Inductive, Capacitive, Resistive
  • Technology: Power MOSFET
  • Rds On (Typ): 140mOhm
  • Current - Output / Channel: 1A
  • Current - Peak Output: -
  • Voltage - Supply: -
  • Voltage - Load: -
  • Operating Temperature: -
  • Features: -
  • Fault Protection: -
  • Mounting Type: Surface Mount
  • Package / Case: 21-TQFN Exposed Pad
  • Supplier Device Package: PG-TIQFN-21-1
패키지: -
Request a Quote
94-2312PBF
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote