Infineon Technologies 제품

AUIRGP50B60PD1E

Infineon Technologies

IGBT 600V 75A 390W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 150A
• Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
• Power - Max: 390W
• Switching Energy: 255µJ (on), 375µJ (off)
• Input Type: Standard
• Gate Charge: 205nC
• Td (on/off) @ 25°C: 30ns/130ns
• Test Condition: 390V, 33A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

AIKP20N60CTAKSA1

Infineon Technologies

IC DISCRETE 600V TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
• Power - Max: 156W
• Switching Energy: 310µJ (on), 460µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 18ns/199ns
• Test Condition: 400V, 20A, 12 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

패키지: TO-220-3

IRG4PC50FPBF

Infineon Technologies

IGBT 600V 70A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 280A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
• Power - Max: 200W
• Switching Energy: 370µJ (on), 2.1mJ (off)
• Input Type: Standard
• Gate Charge: 190nC
• Td (on/off) @ 25°C: 31ns/240ns
• Test Condition: 480V, 39A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IRG4PH50S-EPBF

Infineon Technologies

IGBT 1200V 57A 200W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 57A
• Current - Collector Pulsed (Icm): 114A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
• Power - Max: 200W
• Switching Energy: 1.8mJ (on), 19.6mJ (off)
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 32ns/845ns
• Test Condition: 960V, 33A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

패키지: TO-247-3

BSR315PL6327HTSA1

Infineon Technologies

MOSFET P-CH 60V 620MA SC-59

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 160µA
• Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 176pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SC-59
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

IRLU4343PBF

Infineon Technologies

MOSFET N-CH 55V 26A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

IRF7457TRPBF

Infineon Technologies

MOSFET N-CH 20V 15A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IRF7809AVTRPBF

Infineon Technologies

MOSFET N-CH 30V 13.3A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3780pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

IRAM136-0760A

Infineon Technologies

IC MOD PWR HYBRID 600V 5A MOTOR

• Type: IGBT
• Configuration: 3 Phase
• Current: 5A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads

패키지: 29-PowerSSIP Module, 21 Leads, Formed Leads

SIDC14D60C6

Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 50A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -40°C ~ 175°C

패키지: Die

IR3831MTR1PBF

Infineon Technologies

IC REG SYNC SUPIRBUCK 8A 5X6QFN

• Applications: Converter, DDR
• Voltage - Input: 1.5 V ~ 16 V
• Number of Outputs: 1
• Voltage - Output: 0.6 V ~ 14.4 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 15-PowerVQFN
• Supplier Device Package: PQFN (5x6)

패키지: 15-PowerVQFN

IR3548MTRPBF

Infineon Technologies

IC CTRLR PWM MULTIPHASE 40QFN

• Applications: Converter, CPU
• Voltage - Input: 4.25 V ~ 17 V
• Number of Outputs: 1
• Voltage - Output: 0.25 V ~ 14.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 49-PowerVFQFN
• Supplier Device Package: 49-PQFN (6x8)

패키지: 49-PowerVFQFN

CHL8112A-00CRT

Infineon Technologies

IC REG CTRLR DL BUCK PWM 40QFN

• Applications: Controller, DDR, AMD SVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: 0°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

패키지: 40-VFQFN Exposed Pad

BTS3408GXUMA2

Infineon Technologies

IC SWITCH LOW SIDE DUAL 8DSO

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: -
• Voltage - Load: 60V (Max)
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): 1A
• Rds On (Typ): 480 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

TLE6288R

Infineon Technologies

IC SW SMART MULTICHAN PDSO36

• Switch Type: General Purpose
• Number of Outputs: 6
• Ratio - Input:Output: 1:1
• Output Configuration: High Side or Low Side
• Output Type: N-Channel
• Interface: SPI
• Voltage - Load: 6 V ~ 16 V
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Current - Output (Max): -
• Rds On (Typ): 150 mOhm
• Input Type: -
• Features: Status Flag
• Fault Protection: Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

패키지: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

ICL8201XTSA1

Infineon Technologies

IC BUCK CTLR 1STAGE PFC SOT23-6

• Type: AC DC Offline Switcher
• Topology: Step-Down (Buck)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 6V
• Voltage - Supply (Max): 18V
• Voltage - Output: 27V
• Current - Output / Channel: 400mA
• Frequency: 40kHz ~ 150kHz
• Dimming: Triac
• Applications: Lighting
• Operating Temperature: -25°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Supplier Device Package: PG-SOT23-6-1

패키지: SOT-23-6

TLE49681MXTSA1

Infineon Technologies

MAGNETIC SWITCH BIPOLAR SOT23-3

• Function: Bipolar Switch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 2.25mT Trip, -2.25mT Release
• Test Condition: 25°C
• Voltage - Supply: 3 V ~ 32 V
• Current - Supply (Max): 2.5mA
• Current - Output (Max): 25mA
• Output Type: Open Drain
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 170°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-15

패키지: TO-236-3, SC-59, SOT-23-3

BGA713N7E6327XTSA1

Infineon Technologies

IC AMP LNA MMIC SGL-BAND TSLP-7

• Frequency: 700MHz, 800MHz
• P1dB: -12dBm
• Gain: 15.9dB
• Noise Figure: 1.1dB
• RF Type: UMTS
• Voltage - Supply: 3.6V
• Current - Supply: 4.8mA
• Test Frequency: -
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: TSNP-7-1

패키지: 6-XFDFN Exposed Pad

IPD18DP10LMATMA1

Infineon Technologies

TRENCH >=100V PG-TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 13.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1.04mA
• Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 178mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

IAUC120N06S5L022ATMA1

Infineon Technologies

MOSFET_)40V 60V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 65µA
• Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-34
• Package / Case: 8-PowerTDFN

패키지: -

BAS40-06B5000

Infineon Technologies

DIODE ARR SCHOTT 40V 120MA SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 120mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
• Speed: -
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 1 µA @ 30 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23

패키지: -

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CY9BF106RAPMC-G-UNE1

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 120-LQFP
• Supplier Device Package: 120-LQFP (16x16)

패키지: -

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ICE2B0565

Infineon Technologies

IC OFFLINE SWITCH

• Output Isolation: -
• Internal Switch(s): -
• Voltage - Breakdown: -
• Topology: -
• Voltage - Start Up: -
• Voltage - Supply (Vcc/Vdd): -
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): -
• Fault Protection: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -
• Mounting Type: -

패키지: -

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S28HS01GTFPBHV033

Infineon Technologies

IC FLASH 1GBIT SPI/OCTAL 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

패키지: -

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CYT3BB8CEBQ1AEEGS

Infineon Technologies

TRAVEO-2 BODY HIGH-END

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 148
• Program Memory Size: 4.0625MB (4.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 768K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 82x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

패키지: -

BSZ340N08NS3GATMA1

Infineon Technologies

MOSFET N-CH 80V 6A/23A 8TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 12µA
• Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
• Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

패키지: -

CYAT847AZS72-22002

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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IKQ120N120CH7XKSA1

Infineon Technologies

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -