Infineon Technologies 제품

IRG7CH75K10EF

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IKW30N65ES5XKSA1

Infineon Technologies

IGBT 650V 30A FAST DIODE TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 62A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
• Power - Max: 188W
• Switching Energy: 560µJ (on), 320µJ (off)
• Input Type: Standard
• Gate Charge: 70nC
• Td (on/off) @ 25°C: 17ns/124ns
• Test Condition: 400V, 30A, 13 Ohm, 15V
• Reverse Recovery Time (trr): 75ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

패키지: TO-247-3

IRGP4660DPBF

Infineon Technologies

IGBT 600V 100A 330W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 625µJ (on), 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 140nC
• Td (on/off) @ 25°C: 60ns/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IGB10N60TATMA1

Infineon Technologies

IGBT 600V 20A 110W TO263-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
• Power - Max: 110W
• Switching Energy: 430µJ
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 12ns/215ns
• Test Condition: 400V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF5305L

Infineon Technologies

MOSFET P-CH 55V 31A TO-262

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

PTFA092213ELV4R0XTMA1

Infineon Technologies

RFP-LDMOS GOLDMOS 8

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IKCM10B60HAXKMA1

Infineon Technologies

IFPS MODULES

• Type: IGBT
• Configuration: 3 Phase
• Current: 10A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

패키지: 24-PowerDIP Module (1.028", 26.10mm)

BAT 54-04 B5003

Infineon Technologies

DIODE ARRAY SCHOTTKY 30V SOT23

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

패키지: TO-236-3, SC-59, SOT-23-3

TLE9278QXV33XUMA1

Infineon Technologies

IC SBC MULTI-CAN 48VQFN

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TLE4287GNT

Infineon Technologies

IC REG LINEAR 200MA 14DSO

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 165°C
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

패키지: 14-SOIC (0.154", 3.90mm Width)

ITS42K5DLDFXUMA1

Infineon Technologies

IC PWR SW HI-SIDE 2CH TSON10

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 4.5 V ~ 42 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 250mA
• Rds On (Typ): 2.5 Ohm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Over Temperature, UVLO
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 10-TFDFN Exposed Pad
• Supplier Device Package: PG-TSON-10

패키지: 10-TFDFN Exposed Pad

IR3552MTRPBF

Infineon Technologies

IC DRIVER GATE 40A PQFN

• Output Configuration: Half Bridge
• Applications: Synchronous Buck Converters, Voltage Regulators
• Interface: PWM
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): -
• Current - Output / Channel: 40A
• Current - Peak Output: -
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 4.5 V ~ 17 V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Features: Bootstrap Circuit, Status Flag
• Fault Protection: Over Temperature, Shoot-Through, UVLO
• Mounting Type: Surface Mount
• Package / Case: 25-PowerVFQFN
• Supplier Device Package: 25-PQFN (4x6)

패키지: 25-PowerVFQFN

C161PILF3VCABXUMA1

Infineon Technologies

IC MCU 16BIT ROMLESS 100TQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, I2C, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 76
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 3K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

BSZ060NE2LSATMA1

Infineon Technologies

MOSFET N-CH 25V 12A/40A TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-FL
• Package / Case: 8-PowerTDFN

패키지: -

FF450R17ME7B11BPSA1

Infineon Technologies

MEDIUM POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 450 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONOD

패키지: -

CY8C4147LDAS553XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

패키지: -

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BSB014N04LX3GXUMA1

Infineon Technologies

MOSFET N-CH 40V 36A/180A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M™
• Package / Case: 3-WDSON

패키지: -

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S6E2H46G0AGV2000M

Infineon Technologies

IC MCU 32BIT 544KB FLASH 120LQFP

• Core Processor: ARM® Cortex®-M4F
• Core Size: 32-Bit
• Speed: 160MHz
• Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 100
• Program Memory Size: 544KB (544K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 24x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 120-LQFP
• Supplier Device Package: 120-LQFP (16x16)

패키지: -

BSS119L6433

Infineon Technologies

SMALL SIGNAL N-CHANNEL MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

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DDB2U60N12W3RFC39BPSA1

Infineon Technologies

LOW POWER EASY

• Diode Type: -
• Technology: -
• Voltage - Peak Reverse (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IKB40N65EH5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 74A TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 74 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 250 W
• Switching Energy: 1.1mJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 95 nC
• Td (on/off) @ 25°C: 20ns/157ns
• Test Condition: 400V, 40A, 15Ohm, 15V
• Reverse Recovery Time (trr): 78 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

패키지: -

IMIC34V01X6SA1

Infineon Technologies

INTELLIGENT POWER MODULE

• Type: -
• Configuration: -
• Current: -
• Voltage: -
• Voltage - Isolation: -
• Package / Case: -

패키지: -

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CYAT81650-64AS48T

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

패키지: -

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CY7C63823-XC

Infineon Technologies

USB Low-Speed Peripherals

• Applications: USB Microcontroller
• Core Processor: M8C
• Program Memory Type: FLASH (8kB)
• Controller Series: CY7C638xx
• RAM Size: 256 x 8
• Interface: I2C, SPI, UART, USB
• Number of I/O: 20
• Voltage - Supply: 4V ~ 5.5V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

패키지: -

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IPA60R520C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 8.1A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 29W (Tc)
• Rds On (Max) @ Id, Vgs: 520mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

패키지: -

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IPW65R110CFDFKSA1

Infineon Technologies

MOSFET N-CH 650V 31.2A TO247-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 277.8W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3-1
• Package / Case: TO-247-3

패키지: -

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ND171N18KHPSA1

Infineon Technologies

DIODE GEN PURP 1.8KV 171A PB34-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800 V
• Current - Average Rectified (Io): 171A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: BG-PB34-1
• Operating Temperature - Junction: -40°C ~ 135°C

패키지: -

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CY8C4A45PVI-481

Infineon Technologies

IC MCU 32BIT 32KB FLASH 28SSOP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit Single-Core
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 20
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 8x12b SAR; D/A 2x7b, 2x13b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 28-SSOP

패키지: -