페이지 589 - Infineon Technologies 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-843
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Infineon Technologies 제품

기록 16,988
페이지  589/607
이미지
부품 번호
제조업체
설명
패키지
재고
수량
IRG4RC10UDTRP
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고6,464
IRF6722MTRPBF
Infineon Technologies

MOSFET N-CH 30V 13A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 13A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MP
  • Package / Case: DirectFET? Isometric MP
패키지: DirectFET? Isometric MP
재고5,136
IPS03N03LA G
Infineon Technologies

MOSFET N-CH 25V 90A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
패키지: TO-251-3 Stub Leads, IPak
재고2,144
IRLBL1304
Infineon Technologies

MOSFET N-CH 40V 185A SUPER D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7660pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 110A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SUPER D2-PAK
  • Package / Case: Super D2-Pak
패키지: Super D2-Pak
재고3,360
IPD90R1K2C3BTMA1
Infineon Technologies

MOSFET N-CH 900V 5.1A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 310µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고5,824
IRL40S212
Infineon Technologies

MOSFET N-CH 40V 195A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 137nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 8320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고15,402
IRLIZ44NPBF
Infineon Technologies

MOSFET N-CH 55V 30A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB Full-Pak
  • Package / Case: TO-220-3 Full Pack
패키지: TO-220-3 Full Pack
재고24,864
PTFB082817FHV1R250XTMA1
Infineon Technologies

IC FET RF LDMOS H-34288

  • Transistor Type: LDMOS
  • Frequency: 821MHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.15A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads, Flanged
  • Supplier Device Package: H-34288-2
패키지: 2-Flatpack, Fin Leads, Flanged
재고3,328
PTFA072401ELV4R250XTMA1
Infineon Technologies

FET RF LDMOS 240W H33288-2

  • Transistor Type: LDMOS
  • Frequency: 765MHz
  • Gain: 19dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.8A
  • Power - Output: 220W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-33288-2
패키지: 2-Flatpack, Fin Leads
재고6,160
BCR35PNH6433XTMA1
Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): -
  • Frequency - Transition: 150MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
패키지: 6-VSSOP, SC-88, SOT-363
재고5,680
hot IRAMS06UP60A
Infineon Technologies

IC POWER MODULE PLUG N DRIVE INT

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 6A
  • Voltage: 600V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
패키지: 23-PowerSIP Module, 19 Leads, Formed Leads
재고4,976
IR3477MTR1PBF
Infineon Technologies

IC REG BUCK ADJ 15A SYNC PQFN

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 27V
  • Voltage - Output (Min/Fixed): 0.5V
  • Voltage - Output (Max): 12V
  • Current - Output: 15A
  • Frequency - Switching: Up to 750kHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-PowerVQFN
  • Supplier Device Package: 16-QFN (5x6)
패키지: 16-PowerVQFN
재고6,128
ICE2PCS06HKLA1
Infineon Technologies

IC PFC CTRLR CCM 8DIP

  • Mode: Continuous Conduction (CCM)
  • Frequency - Switching: 58kHz ~ 70kHz
  • Current - Startup: 450µA
  • Voltage - Supply: 11 V ~ 26 V
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
패키지: 8-DIP (0.300", 7.62mm)
재고4,544
ICE2QR0665ZXKLA1
Infineon Technologies

IC CTRLR SMPS QUASI-RESON 7DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
  • Duty Cycle: 50%
  • Frequency - Switching: 52kHz
  • Power (Watts): 79W
  • Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
  • Supplier Device Package: PG-DIP-7
  • Mounting Type: Through Hole
패키지: 8-DIP (0.300", 7.62mm), 7 Leads
재고18,168
XMC1302T016X0032AAXUMA1
Infineon Technologies

IC MCU 32BIT 32KB FLASH 16TSSOP

  • Core Processor: ARM? Cortex?-M0
  • Core Size: 32-Bit
  • Speed: 32MHz
  • Connectivity: I2C, LIN, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
  • Number of I/O: 11
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
  • Data Converters: A/D 11x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: PG-TSSOP-16-8
패키지: 16-TSSOP (0.173", 4.40mm Width)
재고5,744
XC2336B40F66LAAKXUMA1
Infineon Technologies

IC MCU 16BIT 320KB FLASH 64LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 66MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 38
  • Program Memory Size: 320KB (320K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 34K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 9x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-64-6
패키지: 64-LQFP Exposed Pad
재고7,200
CY9AF114LAPMC1-G-MJE1
Infineon Technologies

IC MCU 32BIT FLASH LQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
ACCESSORY27348NOSA1
Infineon Technologies

ACCESSORY 27348NOSA1

  • Type: -
  • Configuration: -
  • Current: -
  • Voltage: -
  • Voltage - Isolation: -
  • Package / Case: -
패키지: -
Request a Quote
IAUZ20N08S5L300ATMA1
Infineon Technologies

MOSFET N-CH 80V 20A 8TSDSON-32

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 8µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-32
  • Package / Case: 8-PowerTDFN
패키지: -
재고16,803
TZ800N18KOFHPSA3
Infineon Technologies

SCR MODULE 1.8KV 1500A MODULE

  • Structure: Single
  • Number of SCRs, Diodes: 1 SCR
  • Voltage - Off State: 1.8 kV
  • Current - On State (It (AV)) (Max): 819 A
  • Current - On State (It (RMS)) (Max): 1500 A
  • Voltage - Gate Trigger (Vgt) (Max): 2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
  • Current - Hold (Ih) (Max): 500 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
패키지: -
Request a Quote
ISC320N12LM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 11µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSO8
  • Package / Case: 8-PowerTDFN
패키지: -
Request a Quote
IGQ100N120S7XKSA1
Infineon Technologies

IGBT TRENCH 1200V 188A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 188 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 824 W
  • Switching Energy: 6.87mJ (on), 4.71mJ (off)
  • Input Type: Standard
  • Gate Charge: 610 nC
  • Td (on/off) @ 25°C: 38ns/200ns
  • Test Condition: 600V, 100A, 1.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-55
패키지: -
재고675
FZ800R33KF2CNOSA2
Infineon Technologies

IGBT MODULE 3300V 1A 9600W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 1 A
  • Power - Max: 9600 W
  • Vce(on) (Max) @ Vge, Ic: 4.25V @ 15V, 800A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 100 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
패키지: -
Request a Quote
S26HL512TFPBHM013
Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
Request a Quote
TC297TX128F300NBCKXUMA2
Infineon Technologies

IC MCU 32BIT 8MB FLASH 292LFBGA

  • Core Processor: TriCore™
  • Core Size: 32-Bit Tri-Core
  • Speed: 300MHz
  • Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
  • Peripherals: DMA, WDT
  • Number of I/O: 263
  • Program Memory Size: 8MB (8M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 768K x 8
  • RAM Size: 2.7M x 8
  • Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
  • Data Converters: A/D 94x12b SAR, Sigma-Delta
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 292-LFBGA
  • Supplier Device Package: PG-LFBGA-292-6
패키지: -
Request a Quote
FF8MR12W1M1HS4PB11BPSA1
Infineon Technologies

SIC 2N-CH 1200V AG-EASY1B

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
  • Rds On (Max) @ Id, Vgs: 8.1mOhm @ 100A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B
패키지: -
재고90
CY8C6148BZI-S2F44T
Infineon Technologies

IC MCU 32BIT 1MB FLASH 124VFBGA

  • Core Processor: ARM® Cortex®-M4F
  • Core Size: 32-Bit
  • Speed: 150MHz
  • Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
  • Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
  • Number of I/O: 100
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 512K x 8
  • Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
  • Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 124-VFBGA
  • Supplier Device Package: 124-VFBGA (9x9)
패키지: -
Request a Quote
2EDF7275FXUMA2
Infineon Technologies

IC GATE DRVR HALF-BRIDG DSO16

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 20V
  • Logic Voltage - VIL, VIH: -, 1.65V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1500 V
  • Rise / Fall Time (Typ): 6.5ns, 4.5ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-16-11
패키지: -
재고61,734