Infineon Technologies 제품

IRG7CH50UED

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

SGD06N60BUMA1

Infineon Technologies

IGBT 600V 12A 68W TO252-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
• Power - Max: 68W
• Switching Energy: 215µJ
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 25ns/220ns
• Test Condition: 400V, 6A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IPP040N06N3GHKSA1

Infineon Technologies

MOSFET N-CH 60V 90A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 188W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

패키지: TO-220-3

IRFB3077GPBF

Infineon Technologies

MOSFET N-CH 75V 120A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 370W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: TO-220-3

IPP11N03LA

Infineon Technologies

MOSFET N-CH 25V 30A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 52W (Tc)
• Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

패키지: TO-220-3

IRL540NL

Infineon Technologies

MOSFET N-CH 100V 36A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
• Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

IPC218N04N3X7SA1

Infineon Technologies

MV POWER MOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

패키지: -

AUIRF7648M2TR

Infineon Technologies

MOSFET N-CH 60V 179A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.9V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 41A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? M4
• Package / Case: DirectFET? Isometric M4

패키지: DirectFET? Isometric M4

IRF6635TRPBF

Infineon Technologies

MOSFET N-CH 30V 32A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5970pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 32A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

패키지: DirectFET? Isometric MX

IPD50N04S4L08ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO252-3-313

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 17µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 46W (Tc)
• Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

IRU3027CWTR

Infineon Technologies

IC CTRL/REG SYNC BUCK 28-SOIC

• Applications: Controller, Intel Processor
• Voltage - Input: 5V, 12V
• Number of Outputs: 4
• Voltage - Output: 1.08 V ~ 1.85 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

IR3536AMTRPBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 48QFN

• Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

패키지: 48-VFQFN Exposed Pad

IFX1117GS V33

Infineon Technologies

IC REG LINEAR 3.3V 1A SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 65dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

패키지: TO-261-4, TO-261AA

TLE4275AKSA1

Infineon Technologies

IC REG LINEAR 400MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

패키지: -

ICE2QS01FKLA1

Infineon Technologies

IC PWM CONTROLLER 8DIP

• Mode: -
• Frequency - Switching: 80kHz
• Current - Startup: 300µA
• Voltage - Supply: 11 V ~ 25 V
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8

패키지: 8-DIP (0.300", 7.62mm)

IR1167BSPBF

Infineon Technologies

IC MOSFET DRIVER N-CHAN 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 12 V ~ 18 V
• Logic Voltage - VIL, VIH: 2V, 2.15V
• Current - Peak Output (Source, Sink): 2A, 7A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 18ns, 10ns
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

TLE7250XLEXUMA1

Infineon Technologies

IC TXRX CAN 1MBPS PG-TSON-8

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Half
• Receiver Hysteresis: 100mV
• Data Rate: 1Mbps
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN Exposed Pad
• Supplier Device Package: PG-TSON-8

패키지: 8-TDFN Exposed Pad

TLE4990E6782HAXA1

Infineon Technologies

SENSOR LINEAR ANALOG SSO4

• Type: Linear
• Technology: Hall Effect
• Axis: Single
• Output Type: Analog Voltage
• Sensing Range: 0mT ~ 400mT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Current - Supply (Max): 5.5mA
• Current - Output (Max): 1.2mA
• Resolution: -
• Bandwidth: -
• Operating Temperature: -40°C ~ 150°C (TA)
• Features: Programmable, Temperature Compensated
• Package / Case: 4-SIP, SSO-4-01
• Supplier Device Package: P-SSO-4-1

패키지: 4-SIP, SSO-4-01

SLE 66R35 MFCC1

Infineon Technologies

IC MEMORY CHIP 1KBYTE S-MFCC1-2

• Type: RFID Transponder
• Frequency: 13.56MHz
• Standards: ISO 14443
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Package / Case: MFCC1 Chip Card Module
• Supplier Device Package: P-MCC2-2-1

패키지: MFCC1 Chip Card Module

PTMA180402MV1AUMA1

Infineon Technologies

IC AMP RF LDMOS 40W DSO-20

• Frequency: 1.8GHz ~ 2.1GHz
• P1dB: -
• Gain: 30dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-20-63

패키지: 20-SOIC (0.433", 11.00mm Width) Exposed Pad

BAS70-06B5000

Infineon Technologies

DIODE ARR SCHOT 70V 70MA SOT23-3

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70 V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 nA @ 50 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3-3

패키지: -

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IS26KL512S-DABLA100

Infineon Technologies

INFINEON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: HyperFlash
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 96 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-VFBGA (6x8)

패키지: -

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CG8653AA

Infineon Technologies

IC PSOC4 8SOIC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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FF3MR12KM1HOSA1

Infineon Technologies

SIC 2N-CH 1200V 375A AG-62MM

• FET Type: Silicon Carbide (SiC)
• FET Feature: -
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
• Rds On (Max) @ Id, Vgs: 2.83mOhm @ 375A, 15V
• Vgs(th) (Max) @ Id: 5.15V @ 168mA
• Gate Charge (Qg) (Max) @ Vgs: 1000nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 29800pF @ 25V
• Power - Max: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-62MM

패키지: -

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T880N18TOFXPSA1

Infineon Technologies

SCR MODULE 1800V 1750A DO200AB

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 880 A
• Current - On State (It (RMS)) (Max): 1750 A
• Voltage - Gate Trigger (Vgt) (Max): 2.2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: -40°C ~ 120°C
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK

패키지: -

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CY8C6248AZI-S2D44

Infineon Technologies

IC MCU 32BIT 1MB FLASH 128TQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 102
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 128-LQFP
• Supplier Device Package: 128-TQFP (14x20)

패키지: -

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BSM400GA120DN2HOSA1

Infineon Technologies

IGBT MOD 1200V 550A 2700W

• IGBT Type: -
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 550 A
• Power - Max: 2700 W
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 400A
• Current - Collector Cutoff (Max): 8 mA
• Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

패키지: -

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S25HL512TFANHV010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-WSON (6x8)

패키지: -

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