페이지 10 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리 | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 803
Language Translation

* Please refer to the English Version as our Official Version.

ISSI, Integrated Silicon Solution Inc 제품 - 메모리

기록 5,873
페이지  10/210
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS43TR16640C-125JBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
재고3,255
DRAM
SDRAM - DDR3
1Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS43TR16640BL-125KBL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25LP512M-RHLA3
ISSI, Integrated Silicon Solution Inc

512Mb QPI/QSPI, 24-ball TFBGA 6x

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
50µs, 1ms
7 ns
2.3V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS25WP064D-JKLE-TR
ISSI, Integrated Silicon Solution Inc

64Mb QPI/QSPI, 8-pin WSON 5X6MM,

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
64Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
-
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
IS25LP256H-RMLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 256MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS25WJ016F-JNLE
ISSI, Integrated Silicon Solution Inc

16MB, QPI/QSPI, 8-PIN SOP 150MIL

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 50µs, 1.6ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고1,500
FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
50µs, 1.6ms
6 ns
1.65V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS46TR16128DL-125KBLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
2Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25WP020E-JNLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 2MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 1.2ms
  • Access Time: 8 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
FLASH
FLASH - NOR
2Mbit
SPI - Quad I/O, QPI, DTR
104 MHz
1.2ms
8 ns
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
IS43LR16128B-5BLI-TR
ISSI, Integrated Silicon Solution Inc

2G, 1.8V, Mobile DDR, 128Mx16, 2

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 208 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-TFBGA (8x10)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR
2Gbit
Parallel
208 MHz
15ns
5 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
60-TFBGA
60-TFBGA (8x10)
IS43LD16128C-25BLI-TR
ISSI, Integrated Silicon Solution Inc

2G, 1.2/1.8V, LPDDR2, 128Mx16, 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 2Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-TFBGA
  • Supplier Device Package: 134-TFBGA (10x11.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR2-S4
2Gbit
HSUL_12
400 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
134-TFBGA
134-TFBGA (10x11.5)
IS46TR16640C-125JBLA25-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 115°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 115°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS66WVS4M8BLL-104NLI-TR
ISSI, Integrated Silicon Solution Inc

32Mb, SerialRAM, 2.7V-3.6V, 104M

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 32Mbit
  • Memory Interface: SPI, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
PSRAM
PSRAM (Pseudo SRAM)
32Mbit
SPI, QPI
104 MHz
-
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS43TR85120AL-107MBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 78TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (9x10.5)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
4Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (9x10.5)
IS45S32200N-7TLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 86TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: -
Request a Quote
DRAM
SDRAM
64Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
IS46TR16512B-125KBLA1
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (10x14)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3
8Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (10x14)
IS46LQ16256A-062BLA2
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
4Gbit
LVSTL
1.6 GHz
-
-
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-VFBGA (10x14.5)
IS46LQ16256A-062BLA1
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
4Gbit
LVSTL
1.6 GHz
-
-
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-VFBGA (10x14.5)
IS46TR16640BL-125KBLA3-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 125°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25LP512MG-RMLE-TY
ISSI, Integrated Silicon Solution Inc

IC FLASH 512MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: 5.5 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
재고477
FLASH
FLASH - NOR
512Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
5.5 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS25LP512MG-RMLE-TR
ISSI, Integrated Silicon Solution Inc

IC FLASH 512MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: 5.5 ns
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
재고2,310
FLASH
FLASH - NOR
512Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
5.5 ns
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS46TR16640ED-125KBLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 1G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
SSTL_15
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS66WVQ2M4DBLL-133BLI
ISSI, Integrated Silicon Solution Inc

IC PSRAM 8MBIT SPI/QUAD 24TFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 37.5ns
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
재고990
PSRAM
PSRAM (Pseudo SRAM)
8Mbit
SPI - Quad I/O
133 MHz
37.5ns
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS25WP064D-JBLA3
ISSI, Integrated Silicon Solution Inc

64Mb QPI/QPI/QSPI, 8-pin SOP 206

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
64Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
5.5 ns
1.65V ~ 1.95V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
IS45S32400J-7TLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 86TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
IS42S32800L-7BLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 90TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: -
Request a Quote
DRAM
SDRAM
256Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS42S32400J-7BL-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 90TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS25WP128F-RHLE-TR
ISSI, Integrated Silicon Solution Inc

128Mb QPI/QSPI, 24-ball TFBGA 6x

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
-
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS62WV5128EBLL-45QLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 32SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.445", 11.30mm Width)
  • Supplier Device Package: 32-SOP
패키지: -
Request a Quote
SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
45ns
45 ns
2.2V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.445", 11.30mm Width)
32-SOP