페이지 146 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리 | Heisener Electronics
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ISSI, Integrated Silicon Solution Inc 제품 - 메모리

기록 5,873
페이지  146/210
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS45S16320F-6TLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고2,656
DRAM
SDRAM
512Mb (32M x 16)
Parallel
167MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS42S32160D-6BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고4,576
DRAM
SDRAM
512Mb (16M x 32)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS61NLP25636A-200B3LI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TFBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TFBGA
재고3,600
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TFBGA
165-TFBGA (13x15)
IS61LPS25636A-200B3LI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TBGA
재고6,496
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
IS43LR32640A-5BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 200MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 2Gb (64M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-LFBGA
  • Supplier Device Package: 90-WBGA (8x13)
패키지: 90-LFBGA
재고6,144
DRAM
SDRAM - DDR
2Gb (64M x 32)
Parallel
200MHz
15ns
5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-LFBGA
90-WBGA (8x13)
IS46LR32160B-6BLA2-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고3,440
DRAM
SDRAM - Mobile DDR
512Mb (16M x 32)
Parallel
166MHz
12ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS61LPD25636A-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고7,296
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61VPS25636A-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고2,400
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61NVP25636A-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고5,792
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61NLP51218A-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고4,144
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61NLF51218A-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 117MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고5,808
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61NLF25636A-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 117MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고7,360
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
hot IS61LPS51218A-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고11,340
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61LPS25636A-200TQ2LI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고2,304
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS61LF25636A-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 7.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고3,488
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
IS43TR85120A-15HBLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (9x10.5)
패키지: 78-TFBGA
재고3,072
DRAM
SDRAM - DDR3
4Gb (512M x 8)
Parallel
667MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (9x10.5)
IS42S86400F-6TLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고5,552
DRAM
SDRAM
512Mb (64M x 8)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS42S32160F-6TLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: 86-TFSOP (0.400", 10.16mm Width)
재고5,760
DRAM
SDRAM
512Mb (16M x 32)
Parallel
167MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
IS46LR32160C-6BLA2
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고2,608
DRAM
SDRAM - Mobile DDR
512Mb (16M x 32)
Parallel
166MHz
12ns
5.5ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS46TR16256AL-15HBLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고6,656
DRAM
SDRAM - DDR3
4Gb (256M x 16)
Parallel
667MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS46TR16256A-125KBLA1-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고6,912
DRAM
SDRAM - DDR3
4Gb (256M x 16)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS45S16320F-7TLA1
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고6,544
DRAM
SDRAM
512Mb (32M x 16)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS64WV51216EDBLL-10BLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-BGA (6x8)
패키지: 48-TFBGA
재고5,808
SRAM
SRAM - Asynchronous
8Mb (512K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFBGA
48-BGA (6x8)
hot IS42S32160D-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고3,968
DRAM
SDRAM
512Mb (16M x 32)
Parallel
166MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS61VPS51236B-250B3LI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 250MHZ 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 2.6ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TBGA
재고6,256
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
250MHz
-
2.6ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
IS61NVF51236B-6.5B3LI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 6.5NS 165BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-TFBGA (13x15)
패키지: 165-TBGA
재고5,840
SRAM
SRAM - Synchronous
18Mb (512K x 36)
Parallel
133MHz
-
6.5ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-TFBGA (13x15)
IS46TR16128AL-15HBLA2
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고5,616
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
667MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS46TR16128A-125KBLA2
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고7,984
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)