페이지 49 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리 | Heisener Electronics
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ISSI, Integrated Silicon Solution Inc 제품 - 메모리

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Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
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Operating Temperature
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Supplier Device Package
IS46QR81024A-075VBLA1
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.333 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
패키지: -
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DRAM
SDRAM - DDR4
8Gbit
Parallel
1.333 GHz
15ns
18 ns
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
IS66WVO32M8DBLL-166BLI
ISSI, Integrated Silicon Solution Inc

IC PSRAM 256MBIT SPI/OCT 24TFBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Octal I/O
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 36ns
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
재고816
PSRAM
PSRAM (Pseudo SRAM)
256Mbit
SPI - Octal I/O
166 MHz
36ns
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS46QR81024A-083TBLA1
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.2 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
패키지: -
Request a Quote
DRAM
SDRAM - DDR4
8Gbit
Parallel
1.2 GHz
15ns
18 ns
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
IS46QR81024A-083TBLA2
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 8

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.2 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 18 ns
  • Voltage - Supply: 1.14V ~ 1.26V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
패키지: -
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DRAM
SDRAM - DDR4
8Gbit
Parallel
1.2 GHz
15ns
18 ns
1.14V ~ 1.26V
-40°C ~ 105°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
IS46TR16640B-125JBLA25
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 115°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
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DRAM
SDRAM - DDR3
1Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 115°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS43TR81024B-125KBL
ISSI, Integrated Silicon Solution Inc

8G, 1.5V, DDR3, 1Gx8, 1600MT/s @

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (10x14)
패키지: -
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DRAM
SDRAM - DDR3
8Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (10x14)
IS46LQ32128AL-062TBLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
패키지: -
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DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 95°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
IS64WV6416EEBLL-10BLA3
ISSI, Integrated Silicon Solution Inc

1Mb,High-Speed/Low Power,Async,6

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: -
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SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
IS61WV6416EEBLL-8TLI
ISSI, Integrated Silicon Solution Inc

1Mb,High-Speed/Low Power,Async w

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 8ns
  • Access Time: 8 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: -
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SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
8ns
8 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS49RL36320-107EBLI
ISSI, Integrated Silicon Solution Inc

RLDRAM3 Memory, 1.15Gbit, x36, C

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 3
  • Memory Size: 1.152Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 1.28V ~ 1.42V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FBGA (13.5x13.5)
패키지: -
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DRAM
RLDRAM 3
1.152Gbit
Parallel
933 MHz
-
8 ns
1.28V ~ 1.42V
-40°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-FBGA (13.5x13.5)
IS61WV5128FBLL-10TLI-TR
ISSI, Integrated Silicon Solution Inc

4Mb,High-Speed/Low Power,Async,5

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: -
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SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IS25WP512M-RHLE-TR
ISSI, Integrated Silicon Solution Inc

512Mb QPI/QSPI, 24-ball TFBGA 6x

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 112 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
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FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, QPI, DTR
112 MHz
50µs, 1ms
-
1.7V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS62WV5128EALL-55BLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 36TFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 1.65V ~ 2.2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-TFBGA
  • Supplier Device Package: 36-TFBGA (6x8)
패키지: -
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SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
55ns
55 ns
1.65V ~ 2.2V
-40°C ~ 85°C (TA)
Surface Mount
36-TFBGA
36-TFBGA (6x8)
IS46TR16256AL-107MBLA2-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT PAR 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
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DRAM
SDRAM - DDR3L
4Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 105°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25WJ032F-JBLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 32MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.6ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고1,005
FLASH
FLASH - NOR
32Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
1.6ms
6 ns
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
IS42S16160L-7TLI-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 143 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: -
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DRAM
SDRAM
256Mbit
LVTTL
143 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
IS46TR16512BL-125KBLA1
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (10x14)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3L
8Gbit
Parallel
800 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (10x14)
IS25WP128F-RMLE-TY
ISSI, Integrated Silicon Solution Inc

IC FLASH 128MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
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FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
-
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS25WP128F-RMLE-TR
ISSI, Integrated Silicon Solution Inc

128Mb QPI/QSPI, 16-pin SOP 300Mi

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
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FLASH
FLASH - NOR (SLC)
128Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
-
1.65V ~ 1.95V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS43TR81280CL-107MBLI
ISSI, Integrated Silicon Solution Inc

1G, 1.35V, DDR3L, 128Mx8, 1866MT

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
패키지: -
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DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
IS43LD16640D-18BLI
ISSI, Integrated Silicon Solution Inc

1G, 1.2/1.8V, LPDDR2, 64MX16, 53

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 1Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 533 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-VFBGA
  • Supplier Device Package: 134-VFBGA (10x11.5)
패키지: -
재고300
DRAM
SDRAM - Mobile LPDDR2-S4
1Gbit
HSUL_12
533 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
134-VFBGA
134-VFBGA (10x11.5)
IS61WV204816ALL-12BLI
ISSI, Integrated Silicon Solution Inc

32Mb,High-Speed,Async,2Mbx16, 12

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 32Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 1.65V ~ 2.2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: -
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SRAM
SRAM - Asynchronous
32Mbit
Parallel
-
12ns
12 ns
1.65V ~ 2.2V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
IS66WVQ2M4DBLL-133BLI-TR
ISSI, Integrated Silicon Solution Inc

8Mb, QUADRAM, 2.7V-3.6V, 133MHz,

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 37.5ns
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
패키지: -
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PSRAM
PSRAM (Pseudo SRAM)
8Mbit
SPI - Quad I/O
133 MHz
37.5ns
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS21EF16G-JQLI
ISSI, Integrated Silicon Solution Inc

16GB, 100 BALL FBGA, 3.3V, ROHS

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (MLC)
  • Memory Size: 128Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LBGA
  • Supplier Device Package: 100-LFBGA (14x18)
패키지: -
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FLASH
FLASH - NAND (MLC)
128Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LFBGA (14x18)
IS25LP256E-RMLE-TR
ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 16-pin SOP 300Mi

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 50µs, 1ms
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
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FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
50µs, 1ms
-
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
IS43TR16640B-125KBL
ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 96TWBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
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DRAM
SDRAM - DDR3
1Gbit
Parallel
800 MHz
15ns
20 ns
1.425V ~ 1.575V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
IS25LP256D-JHLE
ISSI, Integrated Silicon Solution Inc

256Mb QPI/QSPI, 24-ball TFBGA 6x

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 40µs, 800µs
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
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FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
166 MHz
40µs, 800µs
-
2.3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-TFBGA (6x8)
IS62WV5128EALL-55T2LI
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 32TSOP II

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55 ns
  • Voltage - Supply: 1.65V ~ 2.2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.400", 10.16mm Width)
  • Supplier Device Package: 32-TSOP II
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SRAM
SRAM - Asynchronous
4Mbit
Parallel
-
55ns
55 ns
1.65V ~ 2.2V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.400", 10.16mm Width)
32-TSOP II