페이지 78 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43LD16128B-25BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고5,040	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (128M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43LD32640B-25BPL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: 168-VFBGA	재고5,504	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
IS43LD16128B-18BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고5,248	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (128M x 16)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS61WV51216EDALL-20BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고5,120	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	20ns	20ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS46R16320E-6TLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고2,560	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 105°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
IS61NLP51218B-200TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 200MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고2,512	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61NLP25636B-200TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 200MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고7,328	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61NLF51218B-7.5TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 117MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고2,368	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61NLF25636B-7.5TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 117MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고2,512	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LPS51218B-200TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고5,968	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LPS25636B-200TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고3,568	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LF51218B-7.5TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고3,744	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61LF25636B-7.5TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 117MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고4,800	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61NLP25636B-200B3LI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 9M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고2,864	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS62WV102416GBLL-45TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고4,176	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS43LD32640B-18BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고7,504	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (64M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS61WV51216EEBLL-10BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고7,136	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS61WV51216EEBLL-10B2LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고5,104	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
IS61WV51216EDALL-20TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고5,360	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	20ns	20ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS43LD32320C-18BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고4,064	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS46TR16640B-125JBLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고4,704	DRAM	SDRAM - DDR3	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
IS46R16320E-6BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	패키지: 60-TFBGA	재고3,600	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	-40°C ~ 105°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
IS43TR82560CL-125KBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 78TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (8x10.5)	패키지: 78-TFBGA	재고6,976	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (8x10.5)
IS43LD16128B-25BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고7,456	DRAM	SDRAM - Mobile LPDDR2-S4	2Gb (128M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS34ML04G081-TLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 4G PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고5,856	FLASH	FLASH - NAND (SLC)	4Gb (512M x 8)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS43LD32160A-25BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고7,264	DRAM	SDRAM - Mobile LPDDR2-S4	512Mb (16M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS43LD16640C-18BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고4,208	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (64M x 16)	Parallel	533MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS62WV102416EALL-55BLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48MGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.65 V ~ 1.98 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고4,064	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	55ns	55ns	1.65 V ~ 1.98 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)

IS43LD16128B-25BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고5,040

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (128M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43LD32640B-25BPL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

재고5,504

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

IS43LD16128B-18BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고5,248

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (128M x 16)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS61WV51216EDALL-20BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고5,120

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

20ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS46R16320E-6TLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고2,560

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 105°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

IS61NLP51218B-200TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 200MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고2,512

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61NLP25636B-200TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 200MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고7,328

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61NLF51218B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 117MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고2,368

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61NLF25636B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 117MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고2,512

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LPS51218B-200TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고5,968

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LPS25636B-200TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고3,568

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LF51218B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고3,744

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61LF25636B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 117MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고4,800

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61NLP25636B-200B3LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 9M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고2,864

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS62WV102416GBLL-45TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고4,176

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS43LD32640B-18BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고7,504

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (64M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS61WV51216EEBLL-10BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고7,136

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS61WV51216EEBLL-10B2LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고5,104

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

IS61WV51216EDALL-20TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고5,360

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

20ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS43LD32320C-18BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고4,064

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS46TR16640B-125JBLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고4,704

DRAM

SDRAM - DDR3

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

IS46R16320E-6BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

패키지: 60-TFBGA

재고3,600

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

-40°C ~ 105°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

IS43TR82560CL-125KBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 78TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (8x10.5)

패키지: 78-TFBGA

재고6,976

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (8x10.5)

IS43LD16128B-25BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고7,456

DRAM

SDRAM - Mobile LPDDR2-S4

2Gb (128M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS34ML04G081-TLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 4G PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고5,856

FLASH

FLASH - NAND (SLC)

4Gb (512M x 8)

Parallel

-

25ns

2.7 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS43LD32160A-25BLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고7,264

DRAM

SDRAM - Mobile LPDDR2-S4

512Mb (16M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS43LD16640C-18BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고4,208

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (64M x 16)

Parallel

533MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS62WV102416EALL-55BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48MGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.65 V ~ 1.98 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고4,064

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

55ns

1.65 V ~ 1.98 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)