페이지 83 - ISSI, Integrated Silicon Solution Inc 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS25WP128-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 128M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고17,442	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IS25WP128-JLLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 128M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: 8-WDFN Exposed Pad	재고8,280	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS25LP064A-JGLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 64M SPI 133MHZ 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: 24-TBGA	재고10,080	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
IS25WP016D-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 16M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고14,724	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IS25WP080D-JKLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고13,620	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
IS25WP016D-JNLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 16M SPI 133MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고13,764	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS25WP080D-JBLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8M SPI 133MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고15,798	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS25WP080D-JNLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 8M SPI 133MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고14,868	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS61NVP409618B-250B3L	ISSI, Integrated Silicon Solution Inc	IC SRAM 72M PARALLEL 250MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.8ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고2,912	SRAM	SRAM - Synchronous	72Mb (4M x 18)	Parallel	250MHz	-	2.8ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61NVP409618B-250B3L-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 72M PARALLEL 250MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 72Mb (4M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.8ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고5,184	SRAM	SRAM - Synchronous	72Mb (4M x 18)	Parallel	250MHz	-	2.8ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS61VPS102436B-166B3LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 36M PARALLEL 166MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고4,672	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	166MHz	-	3.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS21ES08G-JCLI	ISSI, Integrated Silicon Solution Inc	IC FLASH 64G EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 64Gb (8G x 8) Memory Interface: eMMC Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	패키지: 153-VFBGA	재고9,888	FLASH	FLASH - NAND (MLC)	64Gb (8G x 8)	eMMC	200MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
IS25LP256D-JMLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 256M SPI 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고8,208	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS25WP256D-JLLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 256M SPI 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: 8-WDFN Exposed Pad	재고17,424	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	104MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS25WP256D-JMLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 256M SPI 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고12,612	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	104MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS61LF102436B-7.5TQLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 36M PARALLEL 117MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고5,520	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS61VPS102436B-166B3LI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 36M PARALLEL 166MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고2,640	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	166MHz	-	3.5ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS49NLS18320A-25WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고6,576	DRAM	DRAM	576Mb (32M x 18)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS49NLC18320A-25WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고4,128	DRAM	DRAM	576Mb (32M x 18)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS61QDPB41M36A1-400B4LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 36M PARALLEL 400MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QUADP Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.71 V ~ 1.89 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고4,544	SRAM	SRAM - Synchronous, QUADP	36Mb (1M x 36)	Parallel	400MHz	-	8.4ns	1.71 V ~ 1.89 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
IS49NLS96400A-25WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (64M x 9) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고5,040	DRAM	DRAM	576Mb (64M x 9)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS49NLS18320A-33WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 300MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고7,552	DRAM	DRAM	576Mb (32M x 18)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS49NLC96400A-25WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (64M x 9) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고7,840	DRAM	DRAM	576Mb (64M x 9)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS49NLC18320A-33WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 300MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고4,848	DRAM	DRAM	576Mb (32M x 18)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS61LF102436B-7.5TQLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 36M PARALLEL 117MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	패키지: 100-LQFP	재고2,320	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS49NLS96400A-33WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 300MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (64M x 9) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고4,816	DRAM	DRAM	576Mb (64M x 9)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS49NLC96400A-33WBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 300MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (64M x 9) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고3,872	DRAM	DRAM	576Mb (64M x 9)	Parallel	300MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)
IS49NLC36160A-25EWBL	ISSI, Integrated Silicon Solution Inc	IC DRAM 576M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: 144-TBGA	재고7,152	DRAM	DRAM	576Mb (16M x 36)	Parallel	400MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TBGA	144-TWBGA (11x18.5)

IS25WP128-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 128M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고17,442

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IS25WP128-JLLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 128M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: 8-WDFN Exposed Pad

재고8,280

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS25LP064A-JGLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 64M SPI 133MHZ 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: 24-TBGA

재고10,080

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

IS25WP016D-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 16M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고14,724

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IS25WP080D-JKLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고13,620

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

IS25WP016D-JNLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 16M SPI 133MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고13,764

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS25WP080D-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8M SPI 133MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고15,798

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS25WP080D-JNLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 8M SPI 133MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고14,868

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS61NVP409618B-250B3L

ISSI, Integrated Silicon Solution Inc

IC SRAM 72M PARALLEL 250MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.8ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고2,912

SRAM

SRAM - Synchronous

72Mb (4M x 18)

Parallel

250MHz

-

2.8ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61NVP409618B-250B3L-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 72M PARALLEL 250MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (4M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.8ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고5,184

SRAM

SRAM - Synchronous

72Mb (4M x 18)

Parallel

250MHz

-

2.8ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS61VPS102436B-166B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고4,672

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

166MHz

-

3.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS21ES08G-JCLI

ISSI, Integrated Silicon Solution Inc

IC FLASH 64G EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 64Gb (8G x 8)
Memory Interface: eMMC
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

패키지: 153-VFBGA

재고9,888

FLASH

FLASH - NAND (MLC)

64Gb (8G x 8)

eMMC

200MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

IS25LP256D-JMLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256M SPI 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고8,208

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS25WP256D-JLLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256M SPI 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: 8-WDFN Exposed Pad

재고17,424

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

104MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS25WP256D-JMLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256M SPI 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고12,612

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

104MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS61LF102436B-7.5TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 117MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고5,520

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS61VPS102436B-166B3LI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고2,640

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

166MHz

-

3.5ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS49NLS18320A-25WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고6,576

DRAM

576Mb (32M x 18)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS49NLC18320A-25WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고4,128

DRAM

576Mb (32M x 18)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS61QDPB41M36A1-400B4LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QUADP
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.71 V ~ 1.89 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고4,544

SRAM

SRAM - Synchronous, QUADP

36Mb (1M x 36)

Parallel

400MHz

-

8.4ns

1.71 V ~ 1.89 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

IS49NLS96400A-25WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (64M x 9)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고5,040

DRAM

576Mb (64M x 9)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS49NLS18320A-33WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 300MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고7,552

DRAM

576Mb (32M x 18)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS49NLC96400A-25WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (64M x 9)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고7,840

DRAM

576Mb (64M x 9)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS49NLC18320A-33WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 300MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고4,848

DRAM

576Mb (32M x 18)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS61LF102436B-7.5TQLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 36M PARALLEL 117MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

패키지: 100-LQFP

재고2,320

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS49NLS96400A-33WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 300MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (64M x 9)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고4,816

DRAM

576Mb (64M x 9)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS49NLC96400A-33WBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 300MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (64M x 9)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고3,872

DRAM

576Mb (64M x 9)

Parallel

300MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)

IS49NLC36160A-25EWBL

ISSI, Integrated Silicon Solution Inc

IC DRAM 576M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: 144-TBGA

재고7,152

DRAM

576Mb (16M x 36)

Parallel

400MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TBGA

144-TWBGA (11x18.5)